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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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Find everything you need for your next product design. Simply select an application and click through to the block diagram to discover our semiconductor solutions.

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Example of an N-Channel MOSFET
Example of an N-Channel MOSFET

MOSFET stands for metal-oxide-semiconductor field-effect transistor. It is a field-effect transistor with a MOS structure. Typically, the MOSFET is a three-terminal device with gate (G), drain (D) and source (S) terminals. Current conduction between drain (D) and source (S) is controlled by a voltage applied to the gate (G) terminal. MOSFETs compare favorably with bipolar transistors in terms of relatively high-speed and low-loss operation. There are P type and N type by channel polarity, and there are enhancement type with normally off (gate voltage 0 V off) and depletion type with normally on (deactivated with gate voltage 0 V) by control method. Enhancement type is popular.

 

For an explanation of the MOSFET structure, please refer to the following document.
Structures and Characteristics: Power MOSFET Application Notes (PDF:484KB)