The U-MOSⅨ-H series are the ideal MOSFETs for improving the efficiency of switched-mode power supplies.

The U-MOSⅨ-H series utilizing excellent high-speed performance consists of low-loss MOSFETs for various topologies of switched-mode power supplies. When the TPH3R70PL and TPH1R306PL are used for the primary and secondary sides of the phase-shifted full-bridge DC-DC converter, the efficiency of the TPH3R70PL and TPH1R306PL is equal to or better than that of competitive products throughout the output current range (maximum efficiency: 95.83 %). The U-MOSⅨ-H series is used for various applications including DC-DC converters for base stations, server power supplies, adapters (chargers), brushless motors, and microinverters.

The U-MOSⅨ-H series are the ideal MOSFETs for improving the efficiency of switched-mode power supplies.
  • Operating conditions
    Input voltage=48V
    Output voltage=24V
    Output current =5 to 25 A
    Operating frequency=160kHz
    MOSFETgate drive voltage=6V
  • Device evaluated:
    TPH1R306PL: VDSS=60V, RDS(ON)max= 1.34mΩ at VGS=10V, SOP Advance

  Device compared with the TPH1R306PL

Efficiency
Device Temperature
(Our survey in January 2018)

When Toshiba's MOSFETs are used for the primary and secondary sides of full-bridge DC-DC converters, the efficiency and device temperature characteristics are superior to those of competing products. When comparing the efficiency, high efficiency is maintained throughout the output current range, and when comparing the device temperature, heat generation is reduced by 5°C or more.

Please refer to the following information for details on improving the loss figure of merit.

U-MOSⅨ-H Series MOSFETs

Circuit Simulation

Switched Mode Power Supply Library is the service which can select and download various basic topologies of power supply unit based on your actual requirement to verify the behavior of MOSFET with your simulation environment. 

線上電路模擬器

The Online Circuit Simulator is a service that allows users to easily perform pre-verification of MOSFETs without the need to build a simulation environment.

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