不推薦用於新設計
Power MOSFET (N-ch single 60V<VDSS≤150V)
Application Scope | DC-DC Converters / Automotive / Switching Voltage Regulators / Motor Drivers |
---|---|
Polarity | N-ch |
Generation | U-MOSⅩ-H |
Internal Connection | Single |
AEC-Q101 | Qualified(*) |
RoHS Compatible Product(s) (#) | Available |
*: For detail information, please contact to our sales.
新設計中推薦使用以下產品。
器件型號 | 兼容性 | 備註 |
---|---|---|
TK60S10N1L | Different package and similar characteristics | Slightly higher ON resistance |
XPH6R30ANB | Different package and similar characteristics | Slightly higher ON resistance |
Toshiba Package Name | TO-220SM(W) |
---|---|
Package Image | |
Pins | 3 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
10.0×13.0×3.5 |
Package Dimensions | 檢視 |
Land pattern dimensions | 檢視 |
CAD data (Symbol, Footprint and 3D model) |
Download from UltraLibrarian® in your desired CAD format (Note) |
Please refer to the link destination to check the detailed size.
(Note) Ultra Librarian® is a Registered trademark and CAD data library of EMA (EMA Design Automation, Inc.).
項目 | 符號 | 值 | 單位 |
---|---|---|---|
Drain-Source voltage | VDSS | 100 | V |
Gate-Source voltage | VGSS | +/-20 | V |
Drain current | ID | 160 | A |
Power Dissipation | PD | 375 | W |
項目 | 符號 | 條件 | 值 | 單位 |
---|---|---|---|---|
Gate threshold voltage (Max) | Vth | - | 3.5 | V |
Gate threshold voltage (Min) | Vth | - | 2.5 | V |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=6V | 3.31 | mΩ |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 1.92 | mΩ |
Input capacitance (Typ.) | Ciss | - | 11500 | pF |
Total gate charge (Typ.) | Qg | VGS=10V | 184 | nC |
Reverse recovery time (Typ.) | trr | - | 115 | ns |
Reverse recovery charge (Typ.) | Qrr | - | 138 | nC |