TK4P60DA

Power MOSFET (N-ch 500V<VDSS≤700V)

數據表

TK4P60DA 數據表/日文[Mar,2015]PDF: 368KB

數據表

TK4P60DA 數據表/英文[Aug,2015]PDF: 283KB

Simulation Model

PSpice Model[Jul,2016]lib: 3KB

Simulation Model

LTspice Model[Feb,2019]mod: 21KB

Reliability Information

Reliability Data[Mar,2026]PDF: 250KB

Application Note

MOSFET SPICE model grade[May,2023]PDF: 1639KB

Application Note

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

Application Note

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

Application Note

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

Application Note

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

Application Note

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

Application Note

Avalanche energy calculation[Mar,2020]PDF: 562KB

Application Note

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

Application Note

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

Application Note

Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes[Nov,2019]PDF: 1061KB

Application Note

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

Application Note

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

Application Note

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

Application Note

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

Application Note

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

Application Note

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

Application Note

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

Application Note

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

Application Note

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

Application Note

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

Application Note

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

Application Note

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

Application Note

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

Application Note

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

Application Note

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

Application Note

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

Application Note

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

Application Note

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

Application Note

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

Application Note

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Catalog

Selection Guide MOSFETs 2026 Rev1.0[Feb,2026]PDF: 4223KB

數據表

TK4P60DA 數據表/日文[Mar,2015]PDF: 368KB

數據表

TK4P60DA 數據表/英文[Aug,2015]PDF: 283KB

Application Note

MOSFET SPICE model grade[May,2023]PDF: 1639KB

Application Note

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

Application Note

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

Application Note

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

Application Note

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

Application Note

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

Application Note

Avalanche energy calculation[Mar,2020]PDF: 562KB

Application Note

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

Application Note

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

Application Note

Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes[Nov,2019]PDF: 1061KB

Application Note

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

Application Note

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

Application Note

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

Application Note

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

Application Note

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

Application Note

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

Application Note

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

Application Note

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

Application Note

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

Application Note

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

Application Note

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

Application Note

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

Application Note

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

Application Note

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

Application Note

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

Application Note

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

Application Note

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

Application Note

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

Application Note

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

Application Note

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Jul,2016]lib: 3KB

Simulation Model

LTspice Model[Feb,2019]mod: 21KB

Reliability Information

Reliability Data[Mar,2026]PDF: 250KB

Catalog

Selection Guide MOSFETs 2026 Rev1.0[Feb,2026]PDF: 4223KB

產品概要

Application Scope Switching Voltage Regulators
Polarity N-ch
Generation π-MOSⅦ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

包裝資訊

Toshiba Package Name DPAK
Package Image 東芝 TK4P60DA Power MOSFET (N-ch 500V&lt;VDSS&le;700V)產品 DPAK 封裝圖片
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)		 6.6×10.0×2.3
Package Dimensions 檢視
Land pattern dimensions 檢視
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)		 Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>*1 *3

Download from UltraLibrarian® in your desired CAD format
*1 *3
SamacSys CAD model
(Symbol, Footprint and 3D model)		 Download from SamacSys<br>*2 *3

Download from SamacSys
*2 *3

 Please refer to the link destination to check the detailed size.

*1

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

*2

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

*3

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

絕對最大額定值

項目 符號 值 單位
Drain-Source voltage VDSS 600 V
Gate-Source voltage VGSS +/-30 V
Drain current ID 3.5 A
Power Dissipation PD 80 W

電器特性

項目 符號 條件 值 單位
Gate threshold voltage (Max) Vth - 4.4 V
Gate threshold voltage (Min) Vth - 2.4 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 2.2 Ω
Input capacitance (Typ.) Ciss - 490 pF
Total gate charge (Typ.) Qg VGS=10V 11 nC
Reverse recovery time (Typ.) trr - 1000 ns
Reverse recovery charge (Typ.) Qrr - 5000 nC
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文檔

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Jul,2016

Feb,2019

Mar,2026

*

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

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