TW015N65C

Power SiC MOSFETs

數據表

TW015N65C 數據表/日文[Sep,2024]PDF: 633KB

數據表

TW015N65C 數據表/英文[Sep,2024]PDF: 521KB

Simulation Model

PSpice Model[May,2023]ZIP: 44KB

Simulation Model

LTspice Model[Apr,2023]ZIP: 50KB

Simulation Model

SIMetrix Model[Apr,2023]ZIP: 10KB

Simulation Model

PLECS Model[Nov,2024]ZIP: 6KB

Thermal Simulation Model

Simplified CFD Model[Oct,2023]ZIP: 10KB

Reliability Information

Reliability Data[Feb,2024]PDF: 58KB

Environment Information

Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Dec,2024]PDF: 86KB

Environment Information

Certificate on Content of SVHC of REACH[Dec,2024]PDF: 85KB

Application Note

Features of third generation SiC MOSFET[Jun,2023]PDF: 1316KB

Application Note

MOSFET SPICE model grade[May,2023]PDF: 1639KB

Application Note

FAQ: SiC MOSFET Application Notes[Mar,2021]PDF: 801KB

Application Note

Comparison of SiC MOSFET and Si IGBT: SiCMOSFET Application Notes[Aug,2020]PDF: 907KB

Application Note

Absolute Maximum Ratings and Electrical Characteristics: SiCMOSFET Application Notes[Aug,2020]PDF: 792KB

Catalog

Selection Guide MOSFETs 2024 Rev2.0[Jul,2024]PDF: 10837KB

數據表

TW015N65C 數據表/日文[Sep,2024]PDF: 633KB

數據表

TW015N65C 數據表/英文[Sep,2024]PDF: 521KB

Application Note

Features of third generation SiC MOSFET[Jun,2023]PDF: 1316KB

Application Note

MOSFET SPICE model grade[May,2023]PDF: 1639KB

Application Note

FAQ: SiC MOSFET Application Notes[Mar,2021]PDF: 801KB

Application Note

Comparison of SiC MOSFET and Si IGBT: SiCMOSFET Application Notes[Aug,2020]PDF: 907KB

Application Note

Absolute Maximum Ratings and Electrical Characteristics: SiCMOSFET Application Notes[Aug,2020]PDF: 792KB

Simulation Model

PSpice Model[May,2023]ZIP: 44KB

Simulation Model

LTspice Model[Apr,2023]ZIP: 50KB

Simulation Model

SIMetrix Model[Apr,2023]ZIP: 10KB

Simulation Model

PLECS Model[Nov,2024]ZIP: 6KB

Thermal Simulation Model

Simplified CFD Model[Oct,2023]ZIP: 10KB

Reliability Information

Reliability Data[Feb,2024]PDF: 58KB

Environment Information

Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Dec,2024]PDF: 86KB

Environment Information

Certificate on Content of SVHC of REACH[Dec,2024]PDF: 85KB

Catalog

Selection Guide MOSFETs 2024 Rev2.0[Jul,2024]PDF: 10837KB

產品概要

Application Scope Switching regulators
Polarity N-ch
RoHS Compatible Product(s) (#) Available

包裝資訊

Toshiba Package Name TO-247
Package Image TO-247
Pins 3
Mounting Through Hole
Width×Length×Height
(mm)		 15.94×20.95×5.02
Package Dimensions 檢視

 Please refer to the link destination to check the detailed size.

絕對最大額定值

項目 符號 值 單位
Drain-Source voltage VDSS 650 V
Gate-Source voltage VGSS +25/-10 V
Drain current ID 100 A
Power Dissipation PD 342 W

電器特性

項目 符號 條件 值 單位
Gate threshold voltage (Max) Vth - 5.0 V
Gate threshold voltage (Min) Vth - 3.0 V
Drain-Source on-resistance (Typ.) RDS(ON) |VGS|=18V 15 mΩ
Input capacitance (Typ.) Ciss - 4850 pF
Total gate charge (Typ.) Qg - 128 nC
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文檔

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May,2023

Apr,2023

Apr,2023

Nov,2024

Oct,2023

Feb,2024

Dec,2024

Dec,2024

(Note1)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

(Note2)

SIMetrix® is simulation software and registered trademarks of SIMetrix Technologies Ltd.

(Note3)

PLECS ® is a registered trademark of Plexim, Inc.

應用

Server
Such as low power consumption and miniaturization are important in designing server. Toshiba provides information on a wide range of semiconductor products suitable for power supply units, motor driving unit, over temperature monitoring unit, etc., along with circuit configuration examples.
詳細資料
Uninterruptible power supply
Such as low power consumption and miniaturization are important in designing uninterruptible power supply (UPS). Toshiba provides information on a wide range of semiconductor products suitable for power sullpy units, inverter/converter units, control units, signal transmission units, etc., along with circuit configuration examples.
詳細資料

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