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型號需要超過三個文字以上
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
型號需要超過三個文字以上
MOSFET Gate Driver IC Overview
MOSFET Gate Driver IC is an ON and Off switching control device for external N-channel MOSFET. Toshiba MOSFET Gate Driver ICs have charge pump and protection circuits and they feature ultra small package (1.2 × 0.8 mm), low quiescent current and wide input voltage. Using them with N-channel MOSFET, this solution acheives small size and low loss power line. Toshiba have a variety lineup of Over Voltage Lock Out function.
Toshiba MOSFET Gate driver ICs can be used for single high-side, back to back load switches and power multiplexer.
Toshiba Gate Driver ICs can combine many types of Toshiba Nch-MOSFETs. Toshiba have various supports such as providing simulation, switching evaluation and SOA.
Power multiplexer circuit with 2 input and 1 output is implemented on a small PCB.
Please visit and download below for more detail
Recommended product list
| Product Number | TCK401G | TCK402G | TCK420G | TCK421G | TCK422G | TCK423G | TCK424G | TCK425G |
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| Data Sheet | PDF(526KB) | PDF(3156KB) | ||||||
| Stock Check |  |
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| Maximum Input Voltage VIN max |
40 V | |||||||
| Input Voltage Ranges VIN |
2.7 to 28 V | |||||||
| Gate Drive Voltage VGATE |
4 to 10 V (VIN dependence) | 10 V | 5.6 V | |||||
| Package | WCSP6E (1.2 × 0.8 mm, t:0.55 mm) |
WCSP6G (1.2 × 0.8 mm, t:0.35 mm) |
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| Over Voltage Lockout Threshold |
28 V | 27.73 V | 23.26 V | 14.29 V | 10.83 V | 6.31 V | ||
| Under Voltage Lockout Threshold |
2.7 V | 2 V | ||||||
| Usage | Common Source (Single Hi-side is OK) |
Common Drain (Single Hi-side is OK) |
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Related information
Queries about purchasing, sampling and IC reliability
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