型號查詢

交叉搜尋

About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

關鍵字搜尋

參數搜尋

線上庫存查詢跟購買

Select Product Categories

Differences between BJT and MOSFET

Explanation of the differences between ON/OFF operation of BJT and MOSFET.

(1) Base current of BJT starts flowing when base voltage increases, and collector current is in proportion to this base current. This flow starts at about 0.7 V. This voltage is called the base-emitter threshold voltage (VBE). In order to make collector current flow, it is necessary to supply the base current and continuous driving power is required. (Low drive voltage, continuous driving power required)
(2) Since the MOSFET forms a channel according to the gate-source voltage, this voltage must be a certain voltage or more. Once the channel is formed, the ON state continues and the drain current continues to flow, and so the power required for the driving is small. By discharging the charge accumulated in the gate and removing the channel, it shifts to the OFF state. (Driving voltage higher than BJT, small driving power)

Switching operation of BJT
Fig. 3-5(a) Switching operation of BJT
Switching operation of MOSFET
Fig. 3-5(b) Switching operation of MOSFET

Chapter III : Transistors

Types of Transistors
Bipolar Transistors (BJTs)
Bias Resistor Built-in Transistors (BRTs)
Junction Field-Effect Transistors (JFETs)
Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)
Structure and Operation of MOSFET
MOSFET Performance Improvement: Decision Factors of RDS(ON)
MOSFET Performance Improvement: Approach to Low RDS(ON)
MOSFET Performance Improvement: Super-Junction MOSFETs (SJ-MOS)
Summary of MOSFET Features by Structure
Performance of MOSFETs: Drain Current and Power Dissipation
Performance of MOSFETs: Avalanche Capability
Performance of MOSFETs: Characteristic of Capacitance
Performance of MOSFETs: Safe Operating Area(or Area of Safe Operation)
Insulated-Gate Bipolar Transistors (IGBTs)
Operation of Insulated-Gate Bipolar Transistors (IGBTs)
Performance Improvement of IGBTs: Evolution of Vertical Design
What are RC-IGBTs and IEGTs?
Application of IGBTs
Comparison of Forward Characteristics of IGBTs and MOSFETs
Comparison of Transistors by Structure
Datasheets of MOSFET: Maximum Ratings
Datasheets of MOSFET: Electrical Characteristics
Datasheets of MOSFET: Capacitance and Switching Characteristics
Datasheets of MOSFET: Body Diode

Related information

開啟新視窗