MOSFET 4 Leads Package TO-247-4L(TK25Z60X) Application Circuit

This reference design provides example circuit for maximize switching performance and efficiency using 4 lead MOSFET package (TO-247-4L) which reduces package inductance.

Device and prastic inductance of PCB trace
Simulation circuit

特性

  • Introduction of TO-247-4L package with 4-lead structure including additional source terminal
  • Achieves reduced gate signal oscillation and lower switching loss than 3-lead package
  • Minimizes impact of parasitic inductance in source wiring

Design Documents

Materials for designers, such as an overview of circuit operation and explanations of design considerations. Please click on each tab to view the contents.

Design Data

Provides circuit data that can be loaded into EDA tools, PCB layout data, and data used in PCB manufacturing. Available in formats from multiple tool vendors. You can freely edit it with your preferred tool.

使用東芝項目/產品

器件型號 器件目錄 使用部位・數量 說明
Power MOSFET (N-ch 500V<VDSS≤700V) N-ch MOSFET, 600 V, 0.125 Ω@10V, TO-247-4L, DTMOSⅣ-H

Related Documents

We provide materials useful for designing and considering similar circuits, such as application notes for installed products. Please click on each tab to view the contents.

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