eFuse Application Circuit (with Enhanced Overcurrent Protection)

This reference design provides design guide, data and other contents of eFuse IC Application Circuit (with Enhanced Overcurrent Protection) built on a small board.
This circuit provides precise overcurrent shutdown by combining the eFuse IC and the ThermoflaggerTM used as an overcurrent detection device.

This is a picture of eFuse Application Circuit (with Enhanced Overcurrent Protection).
TCKE905ANA TCKE905ANA CEZ6V8 CEZ6V8 CEZ6V8 CEZ6V8 TCTH021BE TCTH021BE TC7SH34FU TC7SH34FU SSM3K35MFV SSM3K35MFV SSM3J35AMFV SSM3J35AMFV

Click on components for more details

特性

  • Provides precise overcurrent shutdown solution in addition to various eFuse IC protection functions
  • Built on a small 2 x 2cm board

說明

Input Power Supply Voltage DC 2.7V to 6V
Rated Output Current 1.4A (Typ.), up to 4A with appropriate resistor setting

設計文件

供設計人員使用的材料，例如電路操作概述和設計注意事項的解釋。請點擊每個選項以查看內容。

設計數據

提供可載入到EDA工具中的電路資料、PCB佈局資料以及PCB製造中使用的資料。來自多個工具供應商的可用格式。您可以使用喜歡的工具來自由的編輯它。

*1:實際PCB在CR5000BD上設計。其他文件由CR5000BD文件生成。

*2:數據在CR5000BD上生成。

使用東芝項目/產品

器件型號 器件目錄 使用部位・數量 說明
eFuse IC Module Board・1 2.7 to 23 V/4.0 A eFuse IC, 34 mΩ, WSON8
Over Temperature Detection IC Module Board・1 10 μA, Open-drain, Over temperature detection IC
Small-signal MOSFET Module Board・1 N-ch MOSFET, 20 V, 0.18 A, 3.0 Ω@4V, SOT-723(VESM)
Small-signal MOSFET Module Board・1 P-ch MOSFET, -20 V, -0.25 A, 1.4 Ω@4.5V, SOT-723(VESM)
L-MOS VHS series Module Board・1 One-Gate Logic(L-MOS), Non-Inverter Buffer, SOT-353(USV)
Zener diode Module Board・2 6.8 V Zener Diode, SOD-523(ESC)
Power MOSFET (N-ch single 30V<VDSS≤60V) Base Board・4 N-ch MOSFET, 40 V, 0.00085 Ω@10V, SOP Advance(N), U-MOSⅨ-H
Load switch IC Base Board・4 2.7 to 28 V External MOSFET Driver IC, WCSP6E
L-MOS SHS series (TC74LCX-equivalent) Base Board・4 One-Gate Logic(L-MOS), Schmitt Buffer, SOT-363(US6)
74HC CMOS logic IC series Base Board・2 Dual Monostable Multivibrator, SOIC16
Point regulator (single output) Base Board・1 200 mA Fixed Output LDO Regulator, 4.8 V, SOT-25(SMV)
Bias resistor built-in transistor (BRT) Base Board・1 NPN Bias Resistor Built-in Transistors (BRT), 10 kΩ/10 kΩ, SOT-723(VESM)
Bias resistor built-in transistor (BRT) Base Board・4 PNP Bias Resistor Built-in Transistors (BRT), 10 kΩ/10 kΩ, SOT-723(VESM)
Switching diode Base Board・2 80 V/0.1 A Switching diode, SOD-523(ESC)

相關文件

我們提供有助於設計和考慮類似電路的材料，例如已安裝產品的應用說明。請點擊每個選項以查看內容。

相關參考設計

Application Circuits of eFuse IC TCKE805 Series
Power multiplexer circuit
Power Multiplexer Circuit Using Common-Drain MOSFET

應用

Server
Such as low power consumption and miniaturization are important in designing server. Toshiba provides information on a wide range of semiconductor products suitable for power supply units, motor driving unit, over temperature monitoring unit, etc., along with circuit configuration examples.
詳細資料
Solid State Drive
Such as low power consumption and miniaturization are important in designing solid state drive (SSD). Toshiba provides information on a wide range of semiconductor products suitable for power supply/power supply management units, surge/ESD protection circuit units, over temperature monitoring unit, etc., along with circuit configuration examples.
詳細資料
Tablet Device
Such as low power consumption and miniaturization are important in designing tablet device. Toshiba provides information on a wide range of semiconductor products suitable for power supply management units, sensor signal input units, display units, over temperature monitoring unit, etc., along with circuit configuration examples.
詳細資料

聯繫我們

技術方面問題

聯絡我們

聯絡我們

常見問題

常見問答
開啟新視窗