eFuse Application Circuit (with Enhanced Overcurrent Protection)

This reference design provides design guide, data and other contents of eFuse IC Application Circuit (with Enhanced Overcurrent Protection) built on a small board.
This circuit provides precise overcurrent shutdown by combining the eFuse IC and the ThermoflaggerTM used as an overcurrent detection device.

This is a picture of eFuse Application Circuit (with Enhanced Overcurrent Protection).
TCKE905ANA TCKE905ANA CEZ6V8 CEZ6V8 CEZ6V8 CEZ6V8 TCTH021BE TCTH021BE TC7SH34FU TC7SH34FU SSM3K35MFV SSM3K35MFV SSM3J35AMFV SSM3J35AMFV

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特性

  • Provides precise overcurrent shutdown solution in addition to various eFuse IC protection functions
  • Built on a small 2 x 2cm board

說明

Input Power Supply Voltage DC 2.7V to 6V
Rated Output Current 1.4A (Typ.), up to 4A with appropriate resistor setting

設計文件

供設計人員使用的材料，例如電路操作概述和設計注意事項的解釋。請點擊每個選項以查看內容。

設計數據

提供可載入到EDA工具中的電路資料、PCB佈局資料以及PCB製造中使用的資料。來自多個工具供應商的可用格式。您可以使用喜歡的工具來自由的編輯它。

使用東芝項目/產品

器件型號 器件目錄 使用部位・數量 說明
eFuse IC Module Board・1 2.7 to 23 V/4.0 A eFuse IC, 34 mΩ, WSON8
Over Temperature Detection IC Module Board・1 10 μA, Open-drain, Over temperature detection IC
Small-signal MOSFET Module Board・1 N-ch MOSFET, 20 V, 0.18 A, 3.0 Ω@4V, SOT-723(VESM)
Small-signal MOSFET Module Board・1 P-ch MOSFET, -20 V, -0.25 A, 1.4 Ω@4.5V, SOT-723(VESM)
L-MOS VHS series Module Board・1 One-Gate Logic(L-MOS), Non-Inverter Buffer, SOT-353(USV)
Zener diode Module Board・2 6.8 V Zener Diode, SOD-523(ESC)
Power MOSFET (N-ch single 30V<VDSS≤60V) Base Board・4 N-ch MOSFET, 40 V, 0.00085 Ω@10V, SOP Advance(N), U-MOSⅨ-H
Load switch IC Base Board・4 2.7 to 28 V External MOSFET Driver IC, WCSP6E
L-MOS SHS series (TC74LCX-equivalent) Base Board・4 One-Gate Logic(L-MOS), Schmitt Buffer, SOT-363(US6)
74HC CMOS logic IC series Base Board・2 Dual Monostable Multivibrator, SOIC16
Point regulator (single output) Base Board・1 200 mA Fixed Output LDO Regulator, 4.8 V, SOT-25(SMV)
Bias resistor built-in transistor (BRT) Base Board・1 NPN Bias Resistor Built-in Transistors (BRT), 10 kΩ/10 kΩ, SOT-723(VESM)
Bias resistor built-in transistor (BRT) Base Board・4 PNP Bias Resistor Built-in Transistors (BRT), 10 kΩ/10 kΩ, SOT-723(VESM)
Switching diode Base Board・2 80 V/0.1 A Switching diode, SOD-523(ESC)

相關文件

我們提供有助於設計和考慮類似電路的材料，例如已安裝產品的應用說明。請點擊每個選項以查看內容。

相關參考設計

Application Circuits of eFuse IC TCKE805 Series
Power multiplexer circuit
Power Multiplexer Circuit Using Common-Drain MOSFET

應用

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詳細資料
Server
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Solid State Drive
Such as low power consumption and miniaturization are important in designing solid state drive (SSD). Toshiba provides information on a wide range of semiconductor products suitable for power supply/power supply management units, surge/ESD protection circuit units, over temperature monitoring unit, etc., along with circuit configuration examples.
詳細資料

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