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1.6kW, 80Plus Platinum Class, High efficiency Server AC-DC Power supply

Simple Block Diagram

Simple Block Diagram Click to enlarge
(Click the image to see the enlarged image)

Efficiency Curves

Efficiency Curves Click to enlarge
(Click the image to see the enlarged image)


Input voltage AC 90 to 264 V
Output voltage DC12V
Output power 0.8 kW(AC 100V system input), 1.6 kW(AC 200V system input)
Circuit topology Semi-Bridgeless PFC, Phase-Shift Full-Bridge + Synchronous Rectification, Oring Circuit for Output


  • 1U rack size high efficiency and high power output power supply
  • Total efficiency 93%(Vin=230V at 100% load condition)
  • Outline size : 307 mm x 133 mm x 43 mm(including the base plate under the PWB and the top plate covering over the heatsinks)
  • Provides appropriate power devices(MOSFET and SiC diode) and photocouplers totally
  • Click the image to see the picture image

Reference design files

Design, Document

Design, Document

“Design・Document” contains the documents listed below.

Circuit diagram


PCB layers

Reference guide

Design guide

Design, File

Design, File

・Circuit Schematic(CR5000SD / OrCAD® / Altium Designer / EDIF)

・PCB files*1(CR5000BD rev.13 / rev.16 / rev.19 / CR8000DF / Allegro PCB / LPB G-Format)

・PCB fabrication data*2(Gerber Format®, ODB++)

・Simulation file(PSpice®) PFC, PSFB


*1:Actual PCB was designed on CR5000BD.

   The other files were made from CR5000BD file.

*2:The data was generated on CR5000BD.

Toshiba items

Part Number Device Category Portion Usage Description
TK25N60X MOSFET PFC・4 DTMOSIV/600V/140mΩ(max)@VGS=10V/High-speed switching type/TO-247
TRS8E65F SiC schotkky barrier diode PFC・2 Second generation/650V/8A/TO-220-2L
TK25N60X5 MOSFET Primary side・4 DTMOSIV/600V/140mΩ(max)@VGS=10V/High-speed switching type/High-sped diode type/TO-247
TPH3R70APL MOSFET Secondary side・8 U-MOSIX-H/100V/3.7mΩ(max)@VGS=10V/High-speed switching type/SOP Advance
TPHR9003NC MOSFET Oring・10 U-MOSVIII/30V/0.9mΩ(max)@VGS=10V/SOP Advance
TLP2767 Photocoupler Communication between primary side and secondary side・4 For high-speed communications/50Mbps/Totempole output(INV)/5pin SO6L



Name Outline Date of issue
Describes the features of the new package and an operation analysis using simulation 9/2017
Describes the features of the DTMOSV series and the improvements from the previous series 9/2017
  • DTMOS Applications (Noise Reduction)
Describes the mechanism of noise generation and noise reduction techniques coming soon

Application Note

Application note
Name outline Date of issue
Describes planar, trench and super-junction power MOSFETs 11/2016
Describes the absolute maximum ratings, thermal impedance and safe operating area of power MOSFETs 11/2016
Describes electrical characteristics shown in datasheets 11/2016
Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on 11/2016
Describes thermal equivalent circuits, examples of channel temperature calculation and considerations for heatsink attachment 2/2017
Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits 8/2017

user registration

Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation 8/2017

user registration

Describes the oscillation mechanism of MOSFETs for switching applications 8/2017

user registration


Name outline Date of issue
Describes the lineups of power and small-signal MOSFETs by package 7/2017




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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.