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Reference Design Center
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Simple Block Diagram
Efficiency Curves
| Input voltage | AC 90 to 264 V |
|---|---|
| Output voltage | DC12V |
| Output power | 0.8 kW(AC 100V system input), 1.6 kW(AC 200V system input) |
| Circuit topology | Semi-Bridgeless PFC, Phase-Shift Full-Bridge + Synchronous Rectification, Oring Circuit for Output |
“Design・Document” contains the documents listed below.
・Circuit Schematic(CR5000SD / OrCAD® / Altium Designer / EDIF)
・PCB files*1(CR5000BD rev.13 / rev.16 / rev.19 / CR8000DF / Allegro PCB / LPB G-Format)
・PCB fabrication data*2(Gerber Format®, ODB++)
・Simulation file(PSpice®) PFC, PSFB
*1：Actual PCB was designed on CR5000BD.
The other files were made from CR5000BD file.
*2：The data was generated on CR5000BD.
| Part Number | Device Category | Portion Usage | Description |
|---|---|---|---|
| TK25N60X | MOSFET | PFC・4 | DTMOSIV/600V/140mΩ(max)＠VGS=10V/High-speed switching type/TO-247 |
| TRS8E65F | SiC schotkky barrier diode | PFC・2 | Second generation/650V/8A/TO-220-2L |
| TK25N60X5 | MOSFET | Primary side・4 | DTMOSIV/600V/140mΩ(max)＠VGS=10V/High-speed switching type/High-sped diode type/TO-247 |
| TPH3R70APL | MOSFET | Secondary side・8 | U-MOSIX-H/100V/3.7mΩ(max)＠VGS=10V/High-speed switching type/SOP Advance |
| TPHR9003NC | MOSFET | Oring・10 | U-MOSVIII/30V/0.9mΩ(max)＠VGS=10V/SOP Advance |
| TLP2767 | Photocoupler | Communication between primary side and secondary side・4 | For high-speed communications/50Mbps/Totempole output(INV)/5pin SO6L |
| Name | Outline | Date of issue |
|---|---|---|
| Describes the features of the new package and an operation analysis using simulation | 9/2017 | |
| Describes the features of the DTMOSV series and the improvements from the previous series | 9/2017 | |
|
Describes the mechanism of noise generation and noise reduction techniques | coming soon |
| Name | outline | Date of issue | |
|---|---|---|---|
| Describes planar, trench and super-junction power MOSFETs | 11/2016 | ||
|
Describes the absolute maximum ratings, thermal impedance and safe operating area of power MOSFETs | 11/2016 | |
| Describes electrical characteristics shown in datasheets | 11/2016 | ||
| Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on | 11/2016 | ||
| Describes thermal equivalent circuits, examples of channel temperature calculation and considerations for heatsink attachment | 2/2017 | ||
| Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits | 8/2017 | ||
| Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation | 8/2017 | ||
| Describes the oscillation mechanism of MOSFETs for switching applications | 8/2017 |
| Name | outline | Date of issue |
|---|---|---|
|
Describes the lineups of power and small-signal MOSFETs by package | 7/2017 |
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