Action Camera

Action Camera

Such as low power consumption and miniaturization are important in designing action camera. Toshiba provides information on a wide range of semiconductor products suitable for power supply and charge management units, RF circuit units, display unit, etc., along with circuit configuration examples.

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 Image Sensor, MCU, etc. Image Sensor, MCU, etc. GPS, RF-SW, GPS, RF-SW, LDO LDO LDO LDO HDMI® Connector HDMI® Connector Image Processor Image Processor 6-axis Sensor 6-axis Sensor Image Sensor Image Sensor NAND Flash / LPDDR3 Memory NAND Flash /LPDDR3 Memory SD Card SD Card Microphone / Speaker Microphone /Speaker Codec Codec LNA FE Module LNAFE Module GPS IC GPS IC Switch / Keys Switch / Keys Wireless SoC Wi-Fi®/ Bluetooth® Wireless SoCWi-Fi®/ Bluetooth® RF SW RF SW Capacitive Touch IC Capacitive Touch IC LED Driver LED Driver Display Display Status LEDs Status LEDs USB Connector USB Connector TVS TVS TVS TVS TVS TVS Battery Battery USB Connector USBConnector PMIC PMIC Audio CODEC, etc. Audio CODEC, etc. TVS TVS TVS TVS TV IF Bridge TV IFBridge Charger IC Charger IC eFuse IC / Gate Driver IC & N-ch MOSFET eFuse IC / Gate Driver IC & N-ch MOSFET Common Drain MOSFET Common Drain MOSFET Battery and USB unit RF circuit Display unit Camera unit Image processing unit
Battery and USB unit

Example of battery charge/discharge circuit with USB power supply

Example of battery charge/discharge circuit with USB power supply

RF circuit

Example of RF circuit for wireless communication

Example of RF circuit for GPS signal reception

Display unit

Example of LCD display circuit with touch panel

Camera unit

Example of image sensor peripheral circuit for photographic camera

Example of image processing circuit by using image recognition processor

Image processing unit

Example of image processing circuit by using image recognition processor

子方塊圖

Battery and USB unit
Battery and USB unit(1)

Example of battery charge/discharge circuit with USB power supply

Example of battery charge/discharge circuit with USB power supply
TVS diode
器件型號
Toshiba Package Name SL2 CST2C
VESD (Max) [kV] +/-30 +/-30
IR (Max) [µA] 0.1 0.1
Rdyn (Typ.) [Ω] 0.2 0.13
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 12 160
Electronic fuse (eFuse IC)(1)
器件型號
Toshiba Package Name WSON10B WSON10B WSON10B
VIN (Max) [V] 18 18 18
RON (Typ.) [mΩ] 28 28 28
VOVC (Typ.) [V]   6.04 15.1
Recovery Operation Type Auto-retry Auto-retry Auto-retry
Electronic fuse (eFuse IC)(2)
器件型號
Toshiba Package Name WSON10B WSON10B WSON10B WSON10
VIN (Max) [V] 18 18 18 13.2
RON (Typ.) [mΩ] 28 28 28 53
VOVC (Typ.) [V]   6.04 15.1  
Recovery Operation Type Latch Latch Latch Latch
N-ch MOSFET gate driver IC(1)
器件型號
Toshiba Package Name WCSP6E WCSP6E WCSP6G WCSP6G WCSP6G
VOVL_FA (Typ.) [V]     27.56 23.14 14.17
VOVL_RI (Typ.) [V]     27.73 23.26 14.29
VGS (Typ.) [V] 8.5 8.5 10 10 10
N-ch MOSFET gate driver IC(2)
器件型號
Toshiba Package Name WCSP6G WCSP6G WCSP6G
VOVL_FA (Typ.) [V] 14.17 10.71 6.19
VOVL_RI (Typ.) [V] 14.29 10.83 6.31
VGS (Typ.) [V] 5.6 5.6 5.6
N-ch common drain MOSFET
器件型號
Toshiba Package Name TCSPED-302701 TCSPAC-153001 TCSP6A-172101 TCSPAG-341501
VDSS (Max) [V]        
ID (Max) [A]        
RDS(ON) (Max) [Ω] @ |VGS| = 10.0 [V]        
Polarity N-ch×2 N-ch×2 N-ch×2 N-ch×2
Battery and USB unit(2)

Example of battery charge/discharge circuit with USB power supply

Example of battery charge/discharge circuit with USB power supply
Low capacitance TVS diode
器件型號
Toshiba Package Name SL2 SL2 SL2 SL2
VESD (Max) [kV] +/-8 +/-16 +/-15 +/-20
IR (Max) [µA] 0.1 0.1 0.1 0.1
Rdyn (Typ.) [Ω] 1.05 0.7 0.7 0.5
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 0.12 0.15 0.15 0.2
Small signal MOSFET (N-ch)
器件型號
Toshiba Package Name UDFN6B UDFN6
VDSS (Max) [V] 30 30
ID (Max) [A] 15 4.0
RDS(ON) (Max) [Ω] @ |VGS| = 4.5 [V] 0.012 0.064
Polarity N-ch N-ch×2
Small signal MOSFET (P-ch)
器件型號
Toshiba Package Name UDFN6B
VDSS (Max) [V] -30
ID (Max) [A] -10
RDS(ON) (Max) [Ω] @ |VGS| = 4.5 [V] 0.028
Polarity P-ch
RF circuit
RF unit (Wi-Fi/Bluetooth)

Example of RF circuit for wireless communication

Example of RF circuit for wireless communication
Low capacitance TVS diode
器件型號
Toshiba Package Name SL2 SL2 SL2 SL2
VESD (Max) [kV] +/-8 +/-16 +/-15 +/-20
IR (Max) [µA] 0.1 0.1 0.1 0.1
Rdyn (Typ.) [Ω] 1.05 0.7 0.7 0.5
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 0.12 0.15 0.15 0.2
High current LDO regulator
器件型號
Toshiba Package Name WCSP6F DFN5B WCSP4F
IOUT (Max) [mA] 1500 500 500
VOUT [V] 0.6 to 3.6 0.8 to 3.6 0.9 to 5.0
RF unit (GPS)

Example of RF circuit for GPS signal reception

Example of RF circuit for GPS signal reception
Low current LDO regulator
器件型號
Toshiba Package Name DFN4C DFN4 WCSP4F WCSP4E
IOUT (Max) [mA] 300 300 300 300
VOUT [V] 0.9 to 4.5 0.8 to 5.0 0.8 to 5.0 1.0 to 4.5
High current LDO regulator
器件型號
Toshiba Package Name WCSP6F DFN5B WCSP4F
IOUT (Max) [mA] 1500 500 500
VOUT [V] 0.6 to 3.6 0.8 to 3.6 0.9 to 5.0
Display unit
Display unit

Example of LCD display circuit with touch panel

Example of LCD display circuit with touch panel
Low capacitance TVS diode
器件型號
Toshiba Package Name SL2 SL2 SL2 SL2
VESD (Max) [kV] +/-8 +/-16 +/-15 +/-20
IR (Max) [µA] 0.1 0.1 0.1 0.1
Rdyn (Typ.) [Ω] 1.05 0.7 0.7 0.5
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 0.12 0.15 0.15 0.2
TVS diode
器件型號
Toshiba Package Name SL2 CST2C
VESD (Max) [kV] +/-30 +/-30
IR (Max) [µA] 0.1 0.1
Rdyn (Typ.) [Ω] 0.2 0.13
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 12 160
Schottky barrier diode
器件型號
Toshiba Package Name SL2 CL2E
VRRM (Max) [V]    
VR (Max) [V] 30 40
CT (Typ.) [pF]   130
Camera unit
Camera unit

Example of image sensor peripheral circuit for photographic camera

Example of image sensor peripheral circuit for photographic camera
Low capacitance TVS diode
器件型號
Toshiba Package Name SL2 SL2 SL2 SL2
VESD (Max) [kV] +/-8 +/-16 +/-15 +/-20
IR (Max) [µA] 0.1 0.1 0.1 0.1
Rdyn (Typ.) [Ω] 1.05 0.7 0.7 0.5
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 0.12 0.15 0.15 0.2
Low current LDO regulator
器件型號
Toshiba Package Name DFN4C DFN4 WCSP4F WCSP4E
IOUT (Max) [mA] 300 300 300 300
VOUT [V] 0.9 to 4.5 0.8 to 5.0 0.8 to 5.0 1.0 to 4.5
High current LDO regulator
器件型號
Toshiba Package Name WCSP6F DFN5B WCSP4F
IOUT (Max) [mA] 1500 500 500
VOUT [V] 0.6 to 3.6 0.8 to 3.6 0.9 to 5.0
Image processing unit

Example of image processing circuit by using image recognition processor

Example of image processing circuit by using image recognition processor
Low capacitance TVS diode
器件型號
Toshiba Package Name SL2 SL2 SL2 SL2
VESD (Max) [kV] +/-8 +/-16 +/-15 +/-20
IR (Max) [µA] 0.1 0.1 0.1 0.1
Rdyn (Typ.) [Ω] 1.05 0.7 0.7 0.5
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 0.12 0.15 0.15 0.2
TVS diode
器件型號
Toshiba Package Name SL2 CST2C
VESD (Max) [kV] +/-30 +/-30
IR (Max) [µA] 0.1 0.1
Rdyn (Typ.) [Ω] 0.2 0.13
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 12 160
Image processing unit
Image processing unit

Example of image processing circuit by using image recognition processor

Example of image processing circuit by using image recognition processor
Low capacitance TVS diode
器件型號
Toshiba Package Name SL2 SL2 SL2 SL2
VESD (Max) [kV] +/-8 +/-16 +/-15 +/-20
IR (Max) [µA] 0.1 0.1 0.1 0.1
Rdyn (Typ.) [Ω] 1.05 0.7 0.7 0.5
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 0.12 0.15 0.15 0.2
TVS diode
器件型號
Toshiba Package Name SL2 CST2C
VESD (Max) [kV] +/-30 +/-30
IR (Max) [µA] 0.1 0.1
Rdyn (Typ.) [Ω] 0.2 0.13
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 12 160

解決方案

這些文件說明推薦的半導體產品的要點及其特徵,方便產品選擇。

參考設計

PCB photo example of Power multiplexer circuit
Power Multiplexer Circuit Using Common-Drain MOSFET
This power multiplexer circuit with 2 inputs and 1 output is realized on a small board. A new power multiplexer circuit usign common-drain MOSFET has been added to the already developed power multiplexer circuit reference design. These reference circuits allow switching between BBM and MBB modes by combining optimal devices such as MOSFET gate driver ICs and zener diodes from our diverse product lineup.
Power multiplexer circuit / 2 input and 1 output
PCB photo example of Power multiplexer circuit
Power multiplexer circuit
In this reference design, a Power multiplexer circuit with 2 input and 1 output is implemented on a small PCB. MOSFET gate driver ICs, eFuse ICs, zener diodes and small package MOSFETs selected from Toshiba's diverse lineup are used create ideal diode like characteristics with BBM and MBB switching.
Power multiplexer circuit / 2 input and 1 output
Power supply circuit example of LDO regulator TCR3UG series application for power supply of IoT devices.
LDO Regulator TCR3UG Series Application for Power Supply of IoT Devices
This reference design provides document with low consumption current, PSRR, and dynamic response.The LDO has small package, low consumed power, and fast load transient response.
LDO Regulator / TCR3UG
Power supply circuit example of LDO regulator TCR15AG (fixed output voltage type) application & circuit.
LDO Regulator TCR15AG (fixed output voltage type) Application & Circuit
This reference design provides document with PSRR, dynamic response and controlling output voltage.The LDO has very small package and fixed output voltage for consumer application.
LDORegulator / TCR15AG
Power supply circuit example of LDO regulator TCR15AGADJ application & circuit.
LDO Regulator TCR15AGADJ Application & Circuit
This reference design provides document with PSRR, dynamic response and controlling output voltage. The LDO has very small package and adjustable output for consumer application.
LDO Regulator / Design / Support / Reference Design Center

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