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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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In the planar MOSFET shown below:
1. Apply voltage between drain and source in positive polarity. (Drain-source voltage: VDS)
2. Apply voltage between gate and source in positive polarity. (Gate-source voltage: VGS)
3. As a result, electrons are attracted to P layer under a gate insulator film and P layer becomes N layer. (Such P layer that becomes N layer is called an “inversion layer.”)
4. All regions of MOSFET become N layer (from drain side: “N+”-”N-”-”inversion layer(N)”– “N+”) due to inversion mentioned in 3.
5. As a result, MOSFET works as a resistor, and drain current determined by applied VDS and load flows.