使用東芝的SiC MOSFET開啟電源的新大門
解決環境和能源問題是一個重要的全球性問題。隨著電力需求持續升高，對節能的呼聲以及對高效、緊湊型電力轉換系統的需求也迅速增加。
功率半導體具有將直流電轉換成交流電的逆變器功能，將交流電轉換成直流電的轉換器功能，還具有改變交流電頻率的變頻器功能。這些重要器件有助於實現各類產品和不同領域的節能。
相比于傳統的矽（Si）MOSFET和IGBT產品，基於全新碳化矽（SiC）材料的功率MOSFET具有耐高壓，高速開關，低導通電阻性能。除減少產品尺寸外，該類產品可極大降低功率損耗。
Introduction to 2nd Generation SiC MOSFETs
SiC MOSFET參考設計簡介
隨著工業領域裡商品化和標準化進展，越來越多的案例將基於器件選擇和最優電路解決方案的高度通用參考設計用作有效的開發設計方法。
本章節提供採用SiC MOSFET的參考設計，以便能快速推進您的設備設計進程。
3相AC 400V輸入PFC轉換器
Toshiba's reference design of a power factor correction (PFC) circuit for 3-phase 400 V AC inputs illustrates how to improve power supply efficiency using 2nd Generation SiC MOSFETs. The design achieves a power conversion efficiency of 97% and a power factor of 0.99 or more. It is a reference design for the PFC section (gate drive circuit, sensor circuit, output power switch) of high-power converters such as electric vehicle (EV) charging stations.
The growing adoption of EVs has increased the demand for power conversion systems that must also be highly efficient and compact. This Toshiba reference design provides an excellent starting point for the PFC stage of power converters. It can be used as the basis for both prototyping and developing your application, helping it reach its full potential.
5kW隔離式雙向DC-DC轉換器
The 5kW Isolated Bidirectional DC-DC Converter reference design from Toshiba shows how to improve a power supply design's efficiency using 2nd Generation SiC MOSFETs. The design uses the dual active bridge (DAB) method, one of the most popular topologies for such high-power converters. The DAB topology has full bridges on both sides, allowing the direction and amount of power to be controlled by adjusting the phase difference between the left and right bridge circuits. This highly versatile reference design forms a starting point for developing and prototyping high-power conversion applications, such as electric vehicle charging stations and inverters in solar power generators.