使用東芝的SiC MOSFET開啟電源的新大門

由於碳化矽（SiC）的介電擊穿強度大約是矽（Si）的10倍，因此SiC功率器件可以提供高耐壓和低壓降。與相同耐壓條件下的Si相比，SiC器件中的單位面積導通電阻更低。

使用SiC MOSFET提高效率的應用示例介紹

Toshiba's reference design of a power factor correction (PFC) circuit for 3-phase 400 V AC inputs illustrates how to improve power supply efficiency using 2nd Generation SiC MOSFETs. The design achieves a power conversion efficiency of 97% and a power factor of 0.99 or more. It is a reference design for the PFC section (gate drive circuit, sensor circuit, output power switch) of high-power converters such as electric vehicle (EV) charging stations. 
The growing adoption of EVs has increased the demand for power conversion systems that must also be highly efficient and compact. This Toshiba reference design provides an excellent starting point for the PFC stage of power converters. It can be used as the basis for both prototyping and developing your application, helping it reach its full potential.

The 5kW Isolated Bidirectional DC-DC Converter reference design from Toshiba shows how to improve a power supply design's efficiency using 2nd Generation SiC MOSFETs. The design uses the dual active bridge (DAB) method, one of the most popular topologies for such high-power converters. The DAB topology has full bridges on both sides, allowing the direction and amount of power to be controlled by adjusting the phase difference between the left and right bridge circuits.  This highly versatile reference design forms a starting point for developing and prototyping high-power conversion applications, such as electric vehicle charging stations and inverters in solar power generators.