產品概要

Application Scope High-Speed Switching
Polarity N-ch×2
Generation U-MOSⅦ-H
Internal Connection Independent
Component Product (Q1) SSM6N56FE
Component Product (Q2) SSM6N56FE
RoHS Compatible Product(s) (#) Available

包裝資訊

Toshiba Package Name SOT-563 (ES6)
Package Image 東芝 SSM6N76FE Small-signal MOSFET 2 in 1產品 ES6 封裝圖片
JEITA SC-107C
Package Code SOT-563
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
1.6×1.6×0.55
Package Dimensions 檢視
Land pattern dimensions 檢視
SamacSys CAD model
(Symbol, Footprint and 3D model)
Download from SamacSys<br>*1 *2

Download from SamacSys
*1 *2

 Please refer to the link destination to check the detailed size.

*1

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

*2

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

絕對最大額定值

項目 符號 單位
Drain-Source voltage (Q1/Q2) VDSS 20 V
Gate-Source voltage (Q1/Q2) VGSS +/-8 V
Drain current (Q1/Q2) ID 800 mA
Power Dissipation PD 0.15 W

電器特性

項目 符號 條件 單位
Gate threshold voltage (Q1/Q2) (Max) Vth - 1.0 V
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=1.5V 840
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=1.8V 480
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=2.5V 300
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=4.5V 235
Input capacitance (Q1/Q2) (Typ.) Ciss - 55 pF
Total gate charge (Q1/Q2) (Typ.) Qg VGS=4.5V 1.0 nC
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