SiC MOSFET (TOLL Package) Half-bridge Board

This design is populated with two of our latest SiC MOSFETs in a half-bridge configuration, enabling easy evaluation of SiC MOSFETs, whose demand has been increasing in recent years.
It provides detailed information including key design points of each circuit block, usage instructions, adjustment methods, as well as schematic diagrams and PCB layout data, helping support your power electronics designs.

Board Appearance
Board Appearance
TW027U65C /info/lookup.jsp?pid=TW048U65C

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特性

  • Equipped with our latest-generation surface-mount SiC MOSFETs
  • Supports DC-DC converter operation using a half-bridge topology
  • Achieves a maximum efficiency of 99.5% during boost converter operation (Vin = 325V at 3kW output)

說明

  • Board Name: TW027U65C-Mounted Board / TW048U65C-Mounted Board
  • Mounted Device: TW027U65C / TW048U65C
  • Substrate Structure: FR-4, 4-Layers (through-hole via), t1.6mm, Cu Thickness 155μm (outer layers), 140μm (inner layers)
  • Functions: Miller Clamp (High-side / Low-side), Thermistor for Board Temperature Measurement
Efficiency Curve
Efficiency Curve

設計文件

供設計人員使用的材料，例如電路操作概述和設計注意事項的解釋。請點擊每個選項以查看內容。

設計數據

提供可載入到EDA工具中的電路資料、PCB佈局資料以及PCB製造中使用的資料。來自多個工具供應商的可用格式。您可以使用喜歡的工具來自由的編輯它。

*1:Actual PCB was designed on CR8000BD. The other files were made from CR8000BD file.

*2:The data was generated on CR8000BD.

使用東芝項目/產品

器件型號 器件目錄 使用部位・數量 說明
Power SiC MOSFETs Half-bridge・2 N-ch SiC MOSFET, 650 V, 0.027 Ω(typ.)@18 V, TOLL, 3rd Gen.
Power SiC MOSFETs Half-bridge・2 N-ch SiC MOSFET, 650 V, 0.048 Ω(typ.)@18 V, TOLL, 3rd Gen.

相關文件

我們提供有助於設計和考慮類似電路的材料，例如已安裝產品的應用說明。請點擊每個選項以查看內容。

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