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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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A body diode is a parasitic diode formed between a source and drain due to MOSFET structure. The following characteristics are described on the datasheet.
|Diode forward voltage||VDSF||IDR = 30.8 A, VGS = 0 V||-||-||-1.7||V|
|Reverse recovery time||trr||IDR = 15.4 A, VGS = 0 V
-dIDR/dt = 100 A/μs
|Diode reverse recovery charge||Qrr||-||0.6||-||μC|
|Diode peak reverse recovery current||Irr||-||10||-||A|
|Diode dv/dt capability dv/dt||dv/dt||IDR = 15.4 A, VGS = 0 V, VDD = 400 V||50||-||-||V/ns|
Please also refer to here for body diode description.