Features of SiC MOSFET Modules

Our SiC MOSFET modules have been developed for applications such as inverters and converters for railway vehicles, photovoltaic inverters, and industrial motor drives, which require high  current and high voltage, and employ our Third-generation SiC-MOSFET chips to achieve high reliability, wide gate-to-source voltage, and high gate threshold voltage. In addition, the high  heat tolerance and low inductance package brings out the performance of SiC sufficiently.

Comparison of V<sub>GSS</sub>, V<sub>th</sub> with Other Companies’ Products

Our SiC MOSFET modules have a wider gate-to-source voltage (VGSS) standard compared to competitors, making driving designs easier. Higher gate threshold voltage (Vth) specification prevents malfunction.

MG800FXF2YMS3 Circuit diagram
MG800FXF2YMS3 Circuit diagram
Typical MOSFET structure
Typical MOSFET structure
MOSFET built in SBD structure
MOSFET built in SBD structure

The problem was that energizing the parasitic diodes between the drain-source of SiC MOSFET expands the defects in the SiC crystals. Extension of the crystal defect will fluctuate the on-resistance of MOSFET and may also lead to product defects. We have solved this issue by employing a construction in which Schottky barrier diodes (SBDs) are placed inside SiC MOSFET in parallel with parasitic diodes. Since the SBD is built into MOSFET chip, the reverse-direction current at reflux flows to the SBD to suppress the energization to the parasitic diode. In addition, by not operating the parasitic diode, the growth of stacking faults that affect reliability is suppressed.

Comparison Table between SiC MOSFET Module and IGBT Module
Characteristic Symbol
MG800FXF2YMS3 IGBT Module
SiC MOSFET Module
External Dimensions 140mm×100mm 140mm×130mm
Rated current ID/IC 800A 500A
Maximum channel/junction temperature Tch/Tj 175℃ 150℃
Package inductance LSPN 12nH 30nH

The module developed exclusively for use with SiC MOSFET is smaller than the conventional IGBT module. In addition, high-channel-temperature (TchMax = 175°C) and low-inductance (Lspn=12nH) (Note) ensure high heat tolerance and high-speed performance of SiC.

(Note) MG800FXF2YMS3

Lineup
Part number Life cycle Circuit configuration Features VDSS
(Max)
(V)
ID
(Max)
(A)
Package
MG600Q2YMS3 New Product 2in1 All SiC MOSFET 1200 600 Standard package
152mm x 62mm
MG400V2YMS3 New Product 1700 400
MG800FXF2YMS3 New Product 3300 800 iXPLV
140mmx100mm

The product lineup includes three types of all SiC MOSFET 2in1 type with rated voltages ranging from 1200V to 3300V.
We can provide optimal modules for specific applications.

Related information

聯繫我們

技術方面問題

聯絡我們

聯絡我們

常見問題

常見問答

Queries about purchasing, sampling and IC reliability

線上庫存查詢跟購買

keyword:

Disclaimer for External Link
Through this website you are able to proceed to the website of our distributors ("Third Party Website") which is not under the control of Toshiba Corporation and its subsidiaries and affiliates (collectively "Toshiba"). The Third Party Website is made available to you as a convenience only and you agree to use the Third Party Website at your own risk. The link of the Third Party Website does not necessarily imply a recommendation or an endorsement by Toshiba of the Third Party Website. Please be aware that Toshiba is not responsible for any transaction done through the Third Party Website, and such transactions shall be subject to terms and conditions which may be provided in the Third Party Website.
開啟新視窗