Our SiC MOSFET modules have been developed for applications such as inverters and converters for railway vehicles, photovoltaic inverters, and industrial motor drives, which require high current and high voltage, and employ our Third-generation SiC-MOSFET chips to achieve high reliability, wide gate-to-source voltage, and high gate threshold voltage. In addition, the high heat tolerance and low inductance package brings out the performance of SiC sufficiently.
Our SiC MOSFET modules have a wider gate-to-source voltage (VGSS) standard compared to competitors, making driving designs easier. Higher gate threshold voltage (Vth) specification prevents malfunction.
The problem was that energizing the parasitic diodes between the drain-source of SiC MOSFET expands the defects in the SiC crystals. Extension of the crystal defect will fluctuate the on-resistance of MOSFET and may also lead to product defects. We have solved this issue by employing a construction in which Schottky barrier diodes (SBDs) are placed inside SiC MOSFET in parallel with parasitic diodes. Since the SBD is built into MOSFET chip, the reverse-direction current at reflux flows to the SBD to suppress the energization to the parasitic diode. In addition, by not operating the parasitic diode, the growth of stacking faults that affect reliability is suppressed.
|SiC MOSFET Module|
|Maximum channel/junction temperature||Tch/Tj||175℃||150℃|
The module developed exclusively for use with SiC MOSFET is smaller than the conventional IGBT module. In addition, high-channel-temperature (TchMax = 175°C) and low-inductance (Lspn=12nH) (Note) ensure high heat tolerance and high-speed performance of SiC.
The product lineup includes three types of all SiC MOSFET 2in1 type with rated voltages ranging from 1200V to 3300V.
We can provide optimal modules for specific applications.