MG800FXF1JMS3

SiC MOSFET Modules

產品概要

Feature SiC MOSFET + SiC SBD type
Application High power switching (Power conversion, Motor drive)
Circuit Configuration Low side chopper
RoHS Compatible Product(s) (#) Available

包裝資訊

Toshiba Package Name iXPLV
Package Image iXPLV
Mounting Surface Mount
Width×Length×Height
(mm)
144×99.5×40
Package Dimensions 檢視
SamacSys CAD model
(Symbol, Footprint and 3D model)
Download from SamacSys<br>(Note1)(Note2)

Download from SamacSys
(Note1)(Note2)

 Please refer to the link destination to check the detailed size.

(Note1)

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

(Note2)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

絕對最大額定值

項目 符號 單位
Drain current (DC) ID 800 A
Drain-Source voltage VDSS 3300 V
Channel temperature Tch 175

電器特性

項目 符號 條件 單位
Drain-source on-voltage(Sense terminal) (Typ.) VDS(on)sense ID=800A
Tch=25℃
VGS=20V
1.3 V
Source-drain off-voltage(Sense terminal) (Typ.) VSD(off)sense IS=800A
Tch=25℃
VGS=-6V
2.1 V
Turn-on switching loss (Typ.) Eon - 230 mJ
Turn-off switching loss (Typ.) Eoff - 230 mJ
Reverse recovery loss (Typ.) Err - 10 mJ
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