Datasheets of MOSFET: Body Diode

<Electrical characteristics>

  • Continuous drain reverse current (IDR)
    Forward current of drain-source diode with DC
  • Pulse drain reverse current (IDRP)
    Forward current of drain-source diode with pulse
  • Forward voltage (diode) (VDSF)
    Voltage dropdown of drain-source diode  with forward current
  • Reverse recovery time (trr)
    Reverse recovery time of drain-source diode under designated condition
  • Reverse recovery charge (Qrr)
    Reverse recovery charge of drain-source diode under designated condition
Datasheets of MOSFET: Body Diode

Chapter III : Transistors

Types of Transistors
Bipolar Transistors (BJTs)
Bias Resistor Built-in Transistors (BRTs)
Junction Field-Effect Transistors (JFETs)
Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)
Differences between BJT and MOSFET
Structure and Operation of MOSFET
MOSFET Performance Improvement: Decision Factors of RDS(ON)
MOSFET Performance Improvement: Approach to Low RDS(ON)
MOSFET Performance Improvement: Super-Junction MOSFETs (SJ-MOS)
Summary of MOSFET Features by Structure
Performance of MOSFETs: Drain Current and Power Dissipation
Performance of MOSFETs: Avalanche Capability
Performance of MOSFETs: Characteristic of Capacitance
Performance of MOSFETs: Safe Operating Area(or Area of Safe Operation)
Insulated-Gate Bipolar Transistors (IGBTs)
Operation of Insulated-Gate Bipolar Transistors (IGBTs)
Performance Improvement of IGBTs: Evolution of Vertical Design
What are RC-IGBTs and IEGTs?
Application of IGBTs
Comparison of Forward Characteristics of IGBTs and MOSFETs
Comparison of Transistors by Structure
Datasheets of MOSFET: Maximum Ratings
Datasheets of MOSFET: Electrical Characteristics
Datasheets of MOSFET: Capacitance and Switching Characteristics

Related information

開啟新視窗