Datasheets of MOSFET: Body Diode
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＜Electrical characteristics＞
- Continuous drain reverse current (IDR)
Forward current of drain-source diode with DC - Pulse drain reverse current (IDRP)
Forward current of drain-source diode with pulse - Forward voltage (diode) (VDSF)
Voltage dropdown of drain-source diode with forward current - Reverse recovery time (trr)
Reverse recovery time of drain-source diode under designated condition - Reverse recovery charge (Qrr)
Reverse recovery charge of drain-source diode under designated condition
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Chapter III : Transistors
Types of Transistors
Bipolar Transistors (BJTs)
Bias Resistor Built-in Transistors (BRTs)
Junction Field-Effect Transistors (JFETs)
Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)
Differences between BJT and MOSFET
Structure and Operation of MOSFET
MOSFET Performance Improvement: Decision Factors of RDS(ON)
MOSFET Performance Improvement: Approach to Low RDS(ON)
MOSFET Performance Improvement: Super-Junction MOSFETs (SJ-MOS)
Summary of MOSFET Features by Structure
Performance of MOSFETs: Drain Current and Power Dissipation
Performance of MOSFETs: Avalanche Capability
Performance of MOSFETs: Characteristic of Capacitance
Performance of MOSFETs: Safe Operating Area(or Area of Safe Operation)
Insulated-Gate Bipolar Transistors (IGBTs)
Operation of Insulated-Gate Bipolar Transistors (IGBTs)
Performance Improvement of IGBTs: Evolution of Vertical Design
What are RC-IGBTs and IEGTs?
Application of IGBTs
Comparison of Forward Characteristics of IGBTs and MOSFETs
Comparison of Transistors by Structure
Datasheets of MOSFET: Maximum Ratings
Datasheets of MOSFET: Electrical Characteristics
Datasheets of MOSFET: Capacitance and Switching Characteristics
Related information
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- Application Notes
- FAQ
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