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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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Chapter V : Optical Semiconductors : The wavelength range of LEDs

The LED emits ultraviolet light to infrared light with various wavelengths. This emission wavelength is expressed by the following equation using the energy band gap (Eg) of compound semiconductor material.

λ(nm) = 1240/Eg (eV)

Larger Eg materials emit shorter wavelengths, and materials with smaller Eg emit longer wavelengths.
For infrared LEDs used in television remote controls etc., GaAs (gallium arsenide) is the material used; for red/green indicator LEDs, GaP or InGaAlP is used; and for blue LED, InGaN or GaN is used.

The wavelength range of LEDs
Material Energy Band gap Eg
@300K (eV)
Wavelength(λ) Color
GaAs 1.4 885 nm Infrared
GaP 1.8 to 2.26 549 to 700 nm Green to red
InGaAlP 1.9 to 2.3 539 to 653 nm Green to red
InGaN 2.1 to 3.2 388 to 590 nm Ultraviolet to green
GaN 3.4 365 nm Ultraviolet to blue

Chapter V : Optical Semiconductors

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