Comparison of Forward Characteristics of IGBTs and MOSFETs

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This page compares the forward characteristics of the MOSFET(D-MOS) and the IGBT at voltage from 500 to 600 V. In the low-current area, the MOSFET has small voltage drop, and has an advantage. On the other hand, the forward voltage characteristic of the IGBT is better than that of the MOSFET in the high-current area, as shown in Fig. 3-17. As the forward characteristic of the MOSFET has strong positive dependence on temperature, the difference in performance of IGBT and MOSFET widens as temperature increases.

Comparison of forward characteristics between MOSFET and IGBT
Fig. 3-17 Comparison of forward characteristics between MOSFET and IGBT

This figure compares medium- and high-voltage products.
Low-voltage MOSFETs, such as trench MOSFETs, have much lower ON resistance than IGBTs in working current area.

In view of these characteristics and switching performances:

  • MOSFETs are adopted for applications such as switching power supply operating at about 100 kHz and at low current density.
  • IGBTs are adopted for applications such as AC drive operating under 20 kHz and at high current density.

Chapter III : Transistors

Types of Transistors
詳細資料
Bipolar Transistors (BJTs)
詳細資料
Bias Resistor Built-in Transistors (BRTs)
詳細資料
Junction Field-Effect Transistors (JFETs)
詳細資料
Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)
詳細資料
Differences between BJT and MOSFET
詳細資料
Structure and Operation of MOSFET
詳細資料
MOSFET Performance Improvement: Decision Factors of RDS(ON)
詳細資料
MOSFET Performance Improvement: Approach to Low RDS(ON)
詳細資料
MOSFET Performance Improvement: Super-Junction MOSFETs (SJ-MOS)
詳細資料
Summary of MOSFET Features by Structure
詳細資料
Performance of MOSFETs: Drain Current and Power Dissipation
詳細資料
Performance of MOSFETs: Avalanche Capability
詳細資料
Performance of MOSFETs: Characteristic of Capacitance
詳細資料
Performance of MOSFETs: Safe Operating Area(or Area of Safe Operation)
詳細資料
Insulated-Gate Bipolar Transistors (IGBTs)
詳細資料
Operation of Insulated-Gate Bipolar Transistors (IGBTs)
詳細資料
Performance Improvement of IGBTs: Evolution of Vertical Design
詳細資料
What are RC-IGBTs and IEGTs?
詳細資料
Application of IGBTs
詳細資料
Comparison of Transistors by Structure
詳細資料
Datasheets of MOSFET: Maximum Ratings
詳細資料
Datasheets of MOSFET: Electrical Characteristics
詳細資料
Datasheets of MOSFET: Capacitance and Switching Characteristics
詳細資料
Datasheets of MOSFET: Body Diode
詳細資料

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