型號查詢

交叉搜尋

About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

關鍵字搜尋

參數搜尋

線上庫存查詢跟購買

Select Product Categories

Datasheets of MOSFET: Capacitance and Switching Characteristics

<Electrical characteristics>

  • Input capacitance (Ciss )  equivalent to Cgd + Cgs
    Gate-drain and gate-source capacitance
  • Reverse transfer capacitance (Crss )  equivalent to Cgd
    Gate-drain capacitance
  • Output capacitance (Coss )  equivalent to Cgd + Cds
    Gate-drain and drain-source and gate-drain capacitance
Datasheets of MOSFET: Capacitance and Switching Characteristics
  • Rise time (tr)
    t is the time when drain-source voltage varies from 90% to 10%.
  • Turn-on time (ton)
    It is the time between the instant when gate-source voltage rises to 10% and the instant when drain-source voltage falls to 10%.
  • Fall time (tf)
    It is the time when drain-source voltage varies from 10% to 90%.
  • Turn-off time (toff)
    It is the time between the instant when gate-source voltage falls to 90% and the instance when drain-source voltage rises to 90%.
Datasheets of MOSFET: Capacitance and Switching Characteristics

Chapter III : Transistors

Types of Transistors
Bipolar Transistors (BJTs)
Bias Resistor Built-in Transistors (BRTs)
Junction Field-Effect Transistors (JFETs)
Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)
Differences between BJT and MOSFET
Structure and Operation of MOSFET
MOSFET Performance Improvement: Decision Factors of RDS(ON)
MOSFET Performance Improvement: Approach to Low RDS(ON)
MOSFET Performance Improvement: Super-Junction MOSFETs (SJ-MOS)
Summary of MOSFET Features by Structure
Performance of MOSFETs: Drain Current and Power Dissipation
Performance of MOSFETs: Avalanche Capability
Performance of MOSFETs: Characteristic of Capacitance
Performance of MOSFETs: Safe Operating Area(or Area of Safe Operation)
Insulated-Gate Bipolar Transistors (IGBTs)
Operation of Insulated-Gate Bipolar Transistors (IGBTs)
Performance Improvement of IGBTs: Evolution of Vertical Design
What are RC-IGBTs and IEGTs?
Application of IGBTs
Comparison of Forward Characteristics of IGBTs and MOSFETs
Comparison of Transistors by Structure
Datasheets of MOSFET: Maximum Ratings
Datasheets of MOSFET: Electrical Characteristics
Datasheets of MOSFET: Body Diode

Related information

開啟新視窗