型號查詢

交叉搜尋

About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

關鍵字搜尋

參數搜尋

線上庫存查詢跟購買

Select Product Categories

Chapter III : Transistors : Performance Improvement of IGBTs: Evolution of Vertical Design

As shown in Fig. 3-15 (a), the vertical design of the IGBT has been evolving.
Starting from the PT structure, thin PT (generally called “Field Stop”) structure is becoming mainstream as thin wafers are now used. (Gate structure is the same as MOSFET.)

Transition of IGBT’s vertical design
Fig. 3-15(a) Transition of IGBT’s vertical design

VCE(sat) characteristic of PT type has a current value (called “Q point”) that crosses at high temperature and at room temperature.
Since the high-temperature VCE(sat) is always high in the NPT type (like MOSFET), it is easier to balance the collector current even when operating in parallel.

Difference of forward characteristic between PT type and NPT type
Fig. 3-15(b) Difference of forward characteristic between PT type and NPT type

Note: VCE(sat)characteristic - voltage drop when collector current flows in forward direction.

Chapter III : Transistors

Related information

開啟新視窗