Silicon carbide (SiC) is a semiconductor material with a high electric breakdown field, saturated electron velocity, and thermal conductivity, compared to silicon (Si). Therefore, when used in semiconductor devices, they achieve higher voltage resistance, higher-speed switching, and lower ON-resistance compared to Si devices. This is expected to be a next-generation low-loss device that contribute to lower power consumption and system downsizing.
Toshiba’s New Device Structure Improves SiC MOSFET High Temperature Reliability and Reduces Power Loss
Toshiba Launches Silicon Carbide MOSFET Module that Contributes to Higher Efficiency and Miniaturization of Industrial Equipment
Toshiba Launches 1200V Silicon Carbide MOSFET that Contributes to High-efficiency Power Supply
Lineup expansion of SiC SBDs of 650 V contributing to high efficiency of power supply PFCs : TRS12N65FB, TRS16N65FB, TRS20N65FB, TRS24N65FB
SiC SBDs of 650 V/12 A contributing to power saving and high efficiency of power supply PFCs : TRS12A65F, TRS12E65F
Expanded lineup of the second generation of SiC SBD products with a TO-220-2L package: TRS2E65F, TRS3E65F