• English
  • Semiconductor
  • Semiconductor – Quality / Reliability
  • e-Learning
  • Microcontroller Function Terms
  • ΔΣ AD Converters
  • Serial Interface
  • Seven serial interfaces of Toshiba MCU
  • Flash ROM
  • Control using MCU
  • Servo Control
  • Vector Engine and Vector control
  • Ultrasonic Motor Control Technology: High Resolution Control by MCU
  • USB interface
  • Inverter control
  • Basic Knowledge of Discrete Semiconductor Device
  • p-type Semiconductor
  • Compound Semiconductor
  • pn Junction
  • Chapter I : Basis of Semiconductors : Types of Semiconductor Devices
  • What is a Semiconductor?
  • Semiconductor raw materials
  • n-type Semiconductor
  • Chapter II : Diodes : Types of Diodes
  • Chapter II : Diodes : Characteristics Application of Various Diodes
  • Chapter II : Diodes : Schottky Barrier Diodes (SBDs)
  • Chapter II : Diodes : Functions of Rectifier Diodes
  • Chapter II : Diodes : Reverse Recovery Characteristic of Schottky Barrier Diodes (SBDs)
  • Chapter II : Diodes : TVS diode (ESD protection diode)
  • Chapter II : Diodes : Difference Depending on Metal of Schottky Barrier Diodes (SBDs)
  • Chapter II : Diodes : Forward Characteristic of Rectifier Diodes (IF-VF Characteristic)
  • Chapter II : Diodes : Difference between TVS Diodes and Zener Diodes (2)
  • Chapter II : Diodes : Variable-capacitance Diodes (Varicap Diodes)
  • Chapter II : Diodes : Difference between TVS Diodes and Zener Diodes (1)
  • Chapter II : Diodes : FRDs (Fast Recovery Diodes)
  • Chapter II : Diodes : Voltage Regulator Diodes (Zener Diodes)
  • Chapter III : Transistors : Types of Transistors
  • Chapter III : Transistors : Performance of MOSFETs: Characteristic of Capacitance
  • Chapter III : Transistors : Performance of MOSFETs: Safe Operating Area(or Area of Safe Operation)
  • Chapter III : Transistors : Bipolar Transistors (BJTs)
  • Chapter III : Transistors : Bias Resistor Built-in Transistors (BRTs)
  • Chapter III : Transistors : Junction Field-Effect Transistors (JFETs)
  • Chapter III : Transistors : Application of IGBTs
  • Chapter III : Transistors : Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)
  • Chapter III : Transistors : Differences between BJT and MOSFET
  • Chapter III : Transistors : Structure and Operation of MOSFET
  • Chapter III : Transistors : MOSFET Performance Improvement: Decision Factors of RDS(ON)
  • Chapter III : Transistors : MOSFET Performance Improvement: Approach to Low RDS(ON)
  • Chapter III : Transistors : MOSFET Performance Improvement: Super-Junction MOSFETs (SJ-MOS)
  • Chapter III : Transistors : Summary of MOSFET Features by Structure
  • Chapter III : Transistors : Performance of MOSFETs: Drain Current and Power Dissipation
  • Chapter III : Transistors : Performance of MOSFETs: Avalanche Capability
  • Chapter III : Transistors : Comparison of Forward Characteristics of IGBTs and MOSFETs
  • Chapter III : Transistors : Insulated-Gate Bipolar Transistors (IGBTs)
  • Chapter III : Transistors : Operation of Insulated-Gate Bipolar Transistors (IGBTs)
  • Chapter III : Transistors : Performance Improvement of IGBTs:Evolution of Vertical Design
  • Chapter III : Transistors : What are RC-IGBTs and IEGTs?
  • Chapter III : Transistors : Comparison of Transistors by Structure
  • Chapter III : Transistors : Datasheets of MOSFET: Maximum Ratings
  • Chapter III : Transistors : Datasheets of MOSFET: Electrical Characteristics
  • Chapter III : Transistors : Datasheets of MOSFET: Capacitance and Switching Characteristics
  • Chapter III : Transistors : Datasheets of MOSFET: Body Diode
  • Chapter IV : Local Power Supply ICs : Operation of Switching Regulators
  • Chapter IV : Local Power Supply ICs : Why POL Supply ICs Are Wanted?
  • Chapter IV : Local Power Supply ICs : Functions of LDO
  • Chapter IV : Local Power Supply ICs : Types of Local Power Supply ICs
  • Chapter IV : Local Power Supply ICs : Load Switch IC
  • Chapter IV : Local Power Supply ICs : Functions of Load Switch IC
  • Chapter IV : Local Power Supply ICs : Power Management IC
  • Chapter IV : Local Power Supply ICs : Operation of Linear Regulators
  • Chapter IV : Local Power Supply ICs : Example of Power Line Structure in a System
  • Chapter V : Optical Semiconductors : Types of Optical Semiconductors
  • Chapter V : Optical Semiconductors : Characteristics of Photocouplers(Current Transfer Ratio: CTR)
  • Chapter V : Optical Semiconductors : Principal Characteristics of Photocouplers(Trigger LED Current)
  • Chapter V : Optical Semiconductors :Aging Variation Data of Photocouplers
  • Chapter V : Optical Semiconductors : How to Use a Photocoupler
  • Chapter V : Optical Semiconductors : Types of Photocouplers
  • Chapter V : Optical Semiconductors : Types of Photocouplers (Internal Structure)
  • Chapter V : Optical Semiconductors : How to Use a Photocoupler “Output-Side Resistor”
  • Chapter V : Optical Semiconductors : Types of Photocouplers (Packages)
  • Chapter V : Optical Semiconductors : The wavelength range of LEDs
  • Chapter V : Optical Semiconductors : Safety Standards of Photocouplers
  • Chapter V : Optical Semiconductors : How to Use a Photocoupler “Input Current”
  • Chapter V : Optical Semiconductors : How to Use a Photocoupler Check
  • Chapter V : Optical Semiconductors : How to Use a Photocoupler “Output Current”
  • Chapter V : Optical Semiconductors : What Is a Photocoupler?
  • Chapter V : Optical Semiconductors : Why Are Photocouplers Necessary?
  • Chapter V : Optical Semiconductors : Light-Emitting Principal of LEDs
  • Basics of Microcontrollers
  • Digital Value
  • Digital Value: Binary and Decimal
  • Digital Value: Units of Binary Data
  • Digital Value: Notation Method of Data
  • Digital Value: Conversion Method of the Data
  • Logic Circuit
  • Logic Circuit: AND Circuit
  • Logic Circuit: OR Circuit
  • Logic Circuit: NOT Circuit
  • Logic Circuit: Exclusive OR (XOR) Circuit
  • Logic Circuit: 3 State Buffer (1)
  • Logic Circuit: 3 State Buffer (2)
  • Logic Circuit: Application Example of Logic Circuits
  • Logic Circuit: RS flip-flop Circuit
  • History of Microcontrollers
  • History of Microcontrollers: Large Scale Integrated Circuits and Microcontrollers
  • 5 Elements of Microcontrollers
  • CPU (Calculation, Control)
  • Memory (Storage)
  • Memory Type (RAM & ROM)
  • I/O (Input, Output)
  • Bus Line
  • Bus Line Type
  • The Role of Software
  • Execution of Software
  • Programming Language
  • Programming Language: Machine Language
  • Programming Language: Assembly Language
  • Programming Language: C Language
  • Overall Configuration of the CPU
  • Overall Configuration of the CPU: CPU Core (1)
  • Overall Configuration of the CPU: CPU Core (2)
  • Overall Configuration of the CPU: Program Counter
  • Overall Configuration of the CPU: General-purpose Register
  • Overall Configuration of the CPU: PSW (Flag)
  • Overall Configuration of the CPU: Stack and Stack Pointer
  • Interrupt Processing
  • Interrupt Processing: Interrupt Type
  • Interrupt Processing: Maskable Interrupt
  • Interrupt Processing: Non Maskable Interrupt
  • System Development Procedure
  • System Development Procedure: Software Development
  • System Development Procedure: Test that Combines the Hardware and Software
  • System Development Procedure: Emulator
  • Stepping Motor
  • Motor Applications
  • What is a Stepping Motor?
  • Function in Printers
  • Function in Digital Cameras
  • Function in Air Conditioners
  • Function in Slot Machines
  • Function in Astronomical Telescopes
  • Open-Loop Control
  • Pros and Cons
  • Classification by Output Power
  • Classification by Power Supply
  • Unipolar Type and Bipolar Type
  • Classification by Stator
  • Classification by Rotor Types
  • Operation Image
  • Step Operation
  • Step Angle
  • Magnetic Pole of the Stator
  • Motor Current and Rotor Rotation
  • Excitation Mode
  • Excitation Mode: Full Step
  • Excitation Mode: Half Step
  • Excitation Mode: Micro Step
  • Summary of Excitation Modes
  • 2-Phase 4-Pole Motor
  • Two Input Types
  • CLOCK Input Type
  • PHASE Input Type
  • Brushless Motor
  • History of Brushless Motors
  • Brushed DC Motors and Brushless Motors
  • Classification of Brushless Motors
  • What is a Brushless Motor (1)
  • What is a Brushless Motor (2)
  • Application Examples of Brushless Motors
  • Driving Principle of a Motor (1)
  • Driving Principle of a Motor (2)
  • Brushed DC Motors and Brushless Motors
  • Sequence of a Brushed DC Motor
  • Sequence of a Brushless Motor
  • Relation Between a Pole, a Phase, and a Slot
  • Technical Explanation of a Brushless Motor
  • What is PWM?
  • What is an Inverter?
  • What is a Driver?
  • Position Detection by a Hall Sensor
  • Position Detection by an Induced Voltage
  • What is a Square-Wave Drive?
  • What is a Sine-Wave Drive?
  • Configuration of Square-Wave Drive
  • To Start with Square-Wave Drive
  • To Rotate by Square-Wave Drive
  • Configuration of Sine-Wave Drive
  • To Start with Sine-Wave Drive
  • To Rotate by Sine-Wave Drive
  • To Change Speed
  • Speed ​​Sequence
  • TX03 Series Microcontrollers
  • Lineup
  • Features of the TX03 Series.
  • Hardware Configuration
  • NVIC (Nested Vectored Interrupt Controller)
  • Main Core
  • Register Configuration
  • The Role of the Register
  • PC, LR
  • Stack Pointer
  • PUSH/POP to the Stack Pointer
  • Special Register
  • Operation Mode and Stack Pointer (1)
  • Operation Mode and Stack Pointer (2)
  • Exceptions (Reset, Interrupt, Fault, System Call)
  • The Role of NVIC
  • Tail Chain Control by NVIC
  • Memory Map
  • Memory Map for Arm® Cortex®-M3 Specifications
  • Memory Map of TMPM330: Example of TX03 Series
  • Vector Table (1)
  • Vector Table (2)
  • Bit Band Area and Bit Band Alias Area (1)
  • Bit Band Area and Bit Band Alias Area (2)
  • Memory Map (Bit Band Area and Bit Band Alias Area) 1
  • Memory Map (Bit Band Area and Bit Band Alias Area) 2
  • Memory Map (Bit Band Area and Bit Band Alias Area) 3
  • Memory Map (Bit Band Area and Bit Band Alias Area) 4
  • Memory Map (Bit Band Area and Bit Band Alias Area) 5
  • Memory Map (Bit Band Area and Bit Band Alias Area) 6
  • Memory Map (Bit Band Area and Bit Band Alias Area) 7
  • Memory Map (Bit Band Area and Bit Band Alias Area) 8
  • Memory Map (Bit Band Area and Bit Band Alias Area) 9
  • Memory Map (Bit Band Area and Bit Band Alias Area) 10
  • Low Power Consumption Technology
  • Low Power Consumption Control Block
  • Low Power Consumption Mode (1)
  • Low Power Consumption Mode (2)
  • Peripheral Circuits by Group of TX3
  • Peripheral Circuits of the M320 Group
  • M320 Group Application Example
  • Peripheral Circuits of the M330 Group
  • M330 Group Application Example (1)
  • M330 Group Application Example (2)
  • Peripheral Circuits of the M340 Group
  • M340 Group Application Example
  • Peripheral Circuits of the M360 Group
  • M360 Group Application Example
  • Peripheral Circuits of the M390 Group
  • M390 Group Application Example
  • Peripheral Circuits of the M370 Group
  • M370 Group Application Example
  • Overview of Vector Engine (VE)
  • Peripheral Circuits of the M380 Group
  • M380 Group Application Example (1)
  • M380 Group Application Example (2)
  • Basics of CMOS Logic ICs
  • What is a Logic IC?
  • What is a Standard Logic IC?
  • Types of Standard Logic ICs
  • Equipment in Which CMOS Logic ICs are Used
  • Reasons Why CMOS Logic ICs are Used
  • Classification of CMOS Logic ICs and Overview of Each Series
  • What is a CMOS Logic IC?
  • Basic CMOS Logic ICs
  • Basic Operations of CMOS Logic ICs
  • Basic Configuration of CMOS Logic ICs
  • Basic CMOS Logic ICs
  • Combinational Logic: Inverters and Buffers
  • Combinational Logic: Bidirectional Bus Buffers
  • Combinational Logic: Schmitt-Trigger Devices
  • Combinational Logic: Decoders
  • Combinational Logic: Multiplexers
  • Combinational Logic: Analog Multiplexer/Demultiplexers
  • Combinational Logic: Analog Switches
  • Sequential Logic: Latches
  • Sequential Logic: Flip-Flops
  • Sequential Logic: Counters
  • Sequential Logic: Shift Registers
  • Reading Datasheets: Absolute Maximum Ratings and Operating Ranges
  • Reading Datasheets: DC Electrical Characteristics
  • Reading Datasheets: Input Voltages (V(IH) and V(IL))
  • Reading Datasheets: Output Currents (I(OH) and I(OL))
  • Reading Datasheets: Input Current (I(IN))
  • Reading Datasheets: Quiescent Supply Current (I(CC))
  • Reading Datasheets: AC Electrical Characteristics
  • Reading Datasheets: Propagation Delay Times (t(pLH) and t(pHL))
  • Reading Datasheets: Power Dissipation Capacitance (C(PD))
  • Reading Datasheets: Input-Tolerant Function
  • Reading Datasheets: Output-Tolerant Function
  • Reading Datasheets: Power-Down Protection
  • Reading Datasheets
  • Usage Considerations of CMOS Logic ICs
  • Handling of Unused Input Pins
  • Input Rise and Fall Time Specifications
  • Multiple Outputs from a General-Purpose CMOS Logic IC Come Into Conflict (Short-Circuiting)
  • Connecting a Load Capacitance to a CMOS Output Pin
  • Calculating the Operating Supply Current and Power Dissipation
  • Level Shifting Using an Input-Tolerant Function
  • Example of Application of the Power-Down Protection Function (Partial Power-Down)
  • Input-Tolerant and Output Power-Down Protection Functions Available with Each Series
  • Types of Noise to be Noted
  • Countermeasures for Reducing Switching Noise
  • Countermeasures for Signal Reflection
  • Countermeasures for Crosstalk
  • Countermeasures for Hazards
  • Countermeasures for Metastability
  • Countermeasures for Latch-Up
  • Countermeasures for ESD Protection
  • Basics of eFuse ICs
  • What is the semi-conductor fuse eFuse IC?
  • Advantages of Semiconductor-fuse eFuse IC (1)
  • Advantages of Semiconductor-fuse eFuse IC (2)
  • Advantages of Semiconductor-fuse eFuse IC (3)
  • Comparison of eFuse IC performance with conventional fuses
  • Examples of applications where semiconductor fuses (eFuse ICs) are used
  • Overcurrent protection function (OCP)
  • Short circuit protection function
  • Overvoltage protection function (overvoltage clamp)
  • Slew rate control (Suppressing rush current)
  • Basics of Op-amps
  • 1. What is an op-amp?
  • 1.1. Characteristics of op-amps (What is the ideal op-amp?)
  • 1.2. Internal operation of an op-amp
  • 2. Using an op-amp
  • 2.1. Feedback (positive and negative feedback)
  • 2.2. Open-loop and closed-loop gains (Increasing the bandwidth of an amplifier)
  • 2.3. Oscillation
  • 2.4. Basic op-amp applications
  • 2.5. Virtual short (virtual ground)
  • 3. Electrical characteristics
  • 3.1. Input offset voltage (V(IO))
  • 3.2. Common-mode input voltage range (CMV(IN)) and common-mode input signal rejection ratio (CMRR)
  • 3.3. Internal noise of an op-amp
  • 3.4. Noise gain and signal gain
  • Basics of TVS Diodes (ESD protection diodes)
  • 1-1 Reverse breakdown voltage
  • 1-2 Using different types of protection diodes (ESD protection diodes and Zener diodes for overvoltage protection)
  • 1-3 Differences between protection diodes (ESD protection diodes and surge protection Zener diodes) and diodes for constant-voltage regulation
  • 1 What is a TVS diode (ESD protection diode)?
  • 2 Basic operations of TVS diodes (ESD protection diodes)
  • 2-1 Equivalent circuits and benefits
  • 3 Key electrical characteristics of TVS diodes (ESD protection diodes)
  • 3-1 Key characteristics for normal operation (in the absence of an ESD event)(1)
  • 3-1 Key characteristics for normal operation (in the absence of an ESD event)(2)
  • 3-1 Key characteristics for normal operation (in the absence of an ESD event)(3)
  • 3-2 Key characteristics for protection against ESD events(1)
  • 3-2 Key characteristics for protection against ESD events(2)
  • 3-2 Key characteristics for protection against ESD events(3)
  • 4 Selection guidelines for TVS diodes (ESD protection diodes)
  • 5 Layout considerations for TVS diodes (ESD protection diodes)
  • 6 Absolute maximum ratings of TVS diodes (ESD protection diodes)
  • Supplemental information: IEC61000-4-2 and IEC 61000-4-5
  • 7 Electrical characteristics of TVS diodes (ESD protection diodes)
  • Basics of Load Switch ICs
  • 1-2. Benefits of using load switch ICs
  • 1-1. What is a load switch IC?
  • 2-1. Useful functions available with load switch ICs
  • 2-2. Operation of overcurrent protection
  • 2-3. Operation of thermal shutdown
  • 2-4. Inrush current reducing
  • 2-5. Auto discharge
  • 2-6. Undervoltage lockout (UVLO)
  • 2-7. Reverse-current protection
  • 3-1. Glossary of terms used in the datasheets for load switch ICs
  • 4-1. Calculating the power dissipation of a load switch IC and heat dissipation
  • Basics of Low-Dropout (LDO) Regulators
  • 1-1. Types of voltage regulator ICs
  • 1-3. What is an LDO regulator?
  • 1-2. Advantages and disadvantages of linear regulators and switching regulators
  • 1-4. Need of LDO regulators for electronic systems
  • 1-5. What is a linear regulator?
  • 1-6. Operations of linear and switching regulators
  • 1-7. Principle of operation of series regulators
  • 1-8. Circuit configuration of a series regulator
  • 1-9. Differences between a three-terminal voltage regulator and an LDO regulator
  • 2-1. Useful functions available with LDO regulators
  • 2-2. Overcurrent protection operation of LDO regulators
  • 2-3. Thermal shutdown (TSD) operation of LDO regulators
  • 2-4. Inrush current reduction function of LDO regulators
  • 2-5. Auto discharge function of LDO regulators
  • 2-6. Undervoltage lockout (UVLO) function of LDO regulators
  • 3-1. Glossary of terms used in the datasheets for LDO regulators
  • 4-1. Efficiency of LDO regulators
  • 4-2. Calculating the power dissipation and junction temperature of an LDO regulator
  • 5-1. Usage considerations for LDO regulators
  • Basics of Schottky Barrier Diodes
  • 1. Conductors, semiconductors, and insulators
  • 1-1. Energy band diagram
  • 1-2. Characteristics of an intrinsic silicon semiconductor
  • 1-3. pn junction
  • 1-3-1. Forward biasing
  • 1-3-2. Reverse biasing
  • 3-1. Classification of diodes
  • 3-2. Comparison between SBDs and pn junction diodes
  • 3-3. Applications of SBDs
  • 3-4. Forward voltage
  • 3-5. Reverse recovery time
  • 3-6. Maximum rated reverse voltage (VR)
  • 3-7. Leakage current
  • 2. Metal-semiconductor junction
  • 2-1. Schottky contact (Schottky junction) Φm > Φn
  • 2-2. Ohmic contact (Ohmic junction) Φm < Φn
  • 2-3. Conductivity modulation
  • Basic of Thermoflagger™
  • The need for overheating (temperature) monitoring
  • What is Thermoflagger™ ?
  • Basic operations of Thermoflagger™
  • Using Thermoflagger™
  • Feature 1: Simplifies circuit design for overtemperature detection
  • Feature 2: Low-cost solution for monitoring multiple locations for overtemperature conditions
  • Feature 3: Supports failsafe design (1)
  • Feature 3: Supports failsafe design (2)
  • Application example for Thermoflagger™
  • Application of Thermoflagger™ (reference design)
  • Catalogs
  • Warning Regarding Counterfeit Goods
  • Frequently Asked Questions (FAQs)
  • Diodes
  • What are the items for the absolute maximum rating in technical datasheet of the diode?
  • Do the technical datasheets of diodes specify thermal resistance from the junction to the ambient?
  • How does heat change the characteristics of a diode? (Temperature Characteristic)
  • What is the temperature coefficient of the Zener diode (voltage regulator diode, constant voltage diode)?
  • What are the precautions when using switching diodes?
  • What electrical characteristics are specified in the diode technical datasheets?
  • Do SBDs have reverse recovery characteristic (trr)?
  • For what purposes are Zener diodes used?
  • How to calculate thermal resistance of diodes?
  • How to distinguish the anode and cathode terminals of a diode?
  • How can I use a Zener diode to create a relatively constant voltage that is not affected significantly by changes in temperature and supply voltage?
  • How do diodes work?
  • In what kinds of applications are fast recovery diodes (FRDs) used?
  • In what types of circuits are Zener diodes (voltage regulator diodes, constant-voltage diodes) used?
  • Is it OK to connect multiple diodes with the same part number in parallel?
  • Can Zener diodes be used in parallel connection?
  • Is it OK to connect multiple Zener diodes in series?
  • Is it possible to use Zener diodes in the same manner as typical pn junction diodes?
  • What is a diode?
  • What is a Schottky barrier diode (SBD)?
  • How do Zener diodes operation?
  • What are the key characteristics of a varicap diode?
  • What happens if trr is large?
  • What is a fast recovery diode (FRD)?
  • What is an HED?
  • What is a switching diode?
  • What is a variable-capacitance (varicap) diode?
  • What is a Zener diode (voltage regulator diode, constant-voltage diode)?
  • What is the difference between rectifier diodes and typical switching diodes?
  • What is the forward voltage (VF) of Schottky barrier diodes (SBDs)?
  • What is the dynamic impedance of a Zener diode (voltage regulator diode, constant voltage diode)?
  • How much frequency are used to fast recovery diodes?
  • What is diode reverse recovery time (trr)?
  • What is trr level of FRD?
  • What are the characteristics of Schottky barrier diodes (SBDs)?
  • What types of diodes does Toshiba provide?
  • Does the diode technical documentation specify the operating temperature range?
  • Linear ICs
  • How does a boost converter work?
  • How does a buck converter work?
  • In what parts are power supply ICs used?
  • What kinds of local power supply ICs exist?
  • What kinds of switching-type local power supply ICs (switching regulators) exist?
  • Isolators/Solid State Relays
  • What is a photocoupler?
  • Why is a photocoupler necessary?
  • What types of photocouplers are available?
  • What is the internal structure of a photocoupler?
  • How many volts can be applied to the input side LED?
  • Is it possible to use a photocoupler in such a way that for items such as the LED current, output current, and output voltage, the value specified for the absolute maximum rating is exceeded for a short time?
  • What are the parameters specific to photocoupler and photorelay optical isolation devices, transfer ratio (CTR), trigger LED current, and threshold input current?
  • How are the current transfer ratio (CTR), trigger LED current, and threshold input current measured?
  • For a photocoupler and photorelay incorporating a LED device, in designing equipment, which should be considered: LED life or photodetector life?
  • A photocoupler is an isolation device. What is dielectric strength, which indicates its insulation capability?
  • What is the difference between a photocoupler and a photorelay?
  • What are the safety standards required for photocouplers?
  • What are required by safety standards applicable to photocouplers? How are they specified in products?
  • How can I find safety standard authentication information about photocouplers?
  • What is the current transfer ratio?
  • What is the CTR classification by rank?
  • Why are there two current transfer ratios: CTR and CTR (Saturation)?
  • What is the difference between a dark current and OFF-state collector current?
  • Why is VECO very low (0.3V) for Darlington transistors such as TLP187 and TLP387? What precautions should be taken when using such transistors?
  • In designing a circuit using a transistor coupler, how should the current transfer ratio be reflected?
  • How should a circuit driving the LED of a transistor coupler be selected?
  • In a circuit using a transistor coupler, how should load resistance be selected?
  • How many volts are minimally required for transistor couplers to operate?
  • How many milliamps are minimally required for transistor couplers to operate?
  • Up to what frequency can transistor couplers transmit signals?
  • For a transistor coupler with the base terminal, if not using the base terminal, is it OK to keep the base terminal open and do nothing?
  • For IC couplers, there is a requirement related to common-mode transient immunity. However, for transistor couplers, such a requirement does not exist. Why?
  • What is the threshold input current?
  • In designing a circuit using an IC coupler, how should the threshold input current be reflected?
  • How should a circuit driving the LED at the input side of an IC coupler be selected?
  • In a circuit using a high-speed IC coupler, how should output pull-up resistance be selected?
  • For example, for 1Mbps-type IC couplers such as TLP109 and TLP759 to operate, how many volts are minimally required?
  • For IC couplers, some products are defined with a threshold input current, and others are defined with a current transfer ratio. What is the difference between them?
  • Is a bypass capacitor required between the VCC and GND terminals?
  • How should a frequency for signals that can be transmitted by a high-speed IC coupler be estimated?
  • What is the UVLO function?
  • Is there any problem with waveforms with input signals rising or falling gently?
  • What is the difference between the open collector output type and the totempole output type? Also, what precautions should be taken for use?
  • What is the voltage range in which IC couplers can operate?
  • What is common-mode transient immunity? Why is this required for IC couplers?
  • How can I find the resistance values when the photorelay is OFF and when it is ON?
  • Up to what level of voltage can be used at the switch section of a photorelay?
  • How much input current should be passed for switch operation?
  • Up to what level of current can be used at the switch section of a photorelay? Also, for a pulsed current or AC current, what happens?
  • For signals to be switched, up to what frequency can be used?
  • How long does it take from when an input signal enters until the switch changes?
  • Can photorelays be used by series connections or parallel connections? If yes, what points require attention?
  • What is the CR product of the photorelay?
  • Can photorelays be replaced with and used in the same way as mechanical relays? What is the difference, if any?
  • What are Form A contacts and Form B contacts in a photorelay? Also, what are A, B, and C connections? What is the difference?
  • For what purposes are triac couplers used?
  • What precautions should be taken when replacing mechanical relays with triac couplers?
  • What are the differences among triac couplers, SSR (solid state relays), and photorelays?
  • What is the difference between zero-cross triac couplers and non-zero-cross triac couplers? How should they be used properly?
  • What precautions should be taken when performing phase control with triac couplers?
  • For triac couplers, how should a VDRM (400V, 600V, 800V) be selected?
  • How much input current should be set for turning the triac ON/OFF?
  • What precautions should be taken when using triac couplers for a long time?
  • How should values be selected for the constants for the snubber circuit connected to the triac?
  • When using a triac coupler to drive the main triac, how should the current limiting resistor RT directly connected to the triac be determined?
  • Can high-frequency signals be switched ON/OFF with a triac coupler?
  • When controlling a load with a triac coupler, can a load be controlled even if using a rectangular wave power supply at the load side instead of a sinusoidal wave (AC) power supply?
  • What are fiber couplers (TOSLINK?) used for?
  • What are the characteristics of optical transmission?
  • What is a fiber coupler (TOSLINK™)?
  • What is optical fiber?
  • What is optical transmission?
  • What types of optical connectors are available?
  • What's the difference in internal construction between a photocoupler and a digital isolator?
  • What are the pros and cons of different types of galvanic isolations?
  • What are the benefits of Toshiba standard digital isolators compared to other companies?
  • How does the Active Miller Clamp (AMC) in power device gate driver couplers work?
  • SiC MOSFETs / MOSFETs / IGBTs / Bipolar Transistors
  • A dotted line in a safe operating area is annotated as “This area is limited by RDS(ON).” What does it mean?
  • Aren't there maximum guaranteed values for capacitance, gate charge (Qg) and switching characteristics?
  • Are there any reasons why forward transfer admittance,
  • What is the maximum rating listed in the MOSFET data sheet?
  • Electrical characteristics of MOSFETs (Static Characteristics IGSS/IDSS/V(BR)DSS/V(BR)DXS)
  • What are the characteristics of MOSFET body diodes?
  • Electrical characteristics of MOSFETs (Charge Characteristic Qg/Qgs1/Qgd/QSW/QOSS)
  • Electrical characteristics of MOSFETs (Dynamic Characteristics Ciss/Crss/Coss)
  • Electrical characteristics of MOSFETs (Dynamic Characteristics　tr/ton/tf/toff)
  • What is RDS(ON), MOSFET drain-source on-resistance?
  • Electrical characteristics of MOSFETs (Static Characteristics Vth)
  • How can I calculate the channel-to-ambient thermal resistance, Rth(ch-a), of a small-signal MOSFET?
  • How does the series gate resistor affect the MOSFET?
  • How do N-channel MOSFETs work?
  • How much gate-source voltage should be applied to drive the MOSFET?
  • What are the parasitic diodes between the drain and source of the MOSFET?
  • Why are two MOSFETs used in series in the Lithium-ion secondary battery protection circuit?
  • Is it acceptable to use a body diode between the drain and source?
  • Is it possible to use the Zener diode between the gate and source for surge absorption?
  • Is a high drive current necessary for power MOSFETs?
  • Is the on-state resistance of a MOSFET dependent on temperature?
  • MOS is sensitive to static electricity. How do you protect MOSFETs from static electricity?
  • How to select a suitable high voltage MOSFET for the application that current flows in the body diode.
  • How to calculate the avalanche energy.
  • Resistors are often inserted between a CPU and MOSFETs. Why are these resistors necessary?
  • The MOSFET does not turn off by a turn-off signal. How do I solve this problem?
  • How are super-junction MOSFETs different from common D-MOS?
  • What are the capacitance characteristics of MOSFET.
  • What are the considerations when using MOSFETs in parallel?
  • What attention should be paid when the reverse voltage is applied between drain and source of power MOSFET?
  • What attention should be paid to rising and falling time of the driving signal for MOSFET?
  • What is derating of the safe operating area (SOA)?
  • What does the dv/dt of the MOSFET mean?
  • What is avalanche in MOSFET? (avalanche capability)
  • What is the avalanche capability specified as part of the absolute maximum ratings?
  • What is the definition of "drain current (DC) (Silicon limit)" listed in the Absolute Maximum Ratings table?
  • What is the definition of power dissipation?
  • What is the meaning of “Logic-Level Gate Drive” for the MOSFET?
  • What should I pay attention to when mounting a MOSFET?
  • When using a MOSFET as a load switch, how do I reduce the inrush current that occurs?
  • Where can I find information about the MOSFET naming conventions?
  • Why do Toshiba's power MOSFETs exhibit larger gate-source leakage current, IGSS, than those of other companies?
  • Why is no operating temperature range specified?
  • Are the drain current ID and IDP (absolute maximum ratings) constant to temperature?
  • What part of the semiconductor is the case temperature measured on?
  • What is Kelvin connection?
  • All Semiconductor Devices
  • How much power is it permissible for the semiconductor device to dissipate?
  • How to approximate power dissipation wave to square wave
  • How to calculate for selecting a heat sink of a semiconductor device (1)
  • How to calculate for selecting a heat sink of a semiconductor device (2)
  • How to calculate the junction temperature of a semiconductor device whose datasheets do not include a “thermal resistance” value
  • How to calculate the junction temperature when the power is dissipated in a semiconductor device
  • How to calculate the transient thermal impedance at short pulse width, which is not included in the datasheet
  • If the packages are the same, are the thermal resistances the same?
  • In a board design, what are the methods for reducing the junction temperature?
  • Is case temperature or lead temperature the same as junction temperature?
  • What are the effects of a double-sided cooling package?
  • What are the effects of thermal via holes?
  • What are the important considerations when using a heat sink?
  • What do the thermal resistance suffixes in Rth(j-c), Rth(j-a) and Rth(ch-c) mean?
  • What is a radiation equivalent circuit?
  • What is thermal resistance?
  • What is transient thermal impedance?
  • When multiple semiconductor devices are arranged on the same board, is it necessary to consider thermal interference?
  • General-Purpose Logic ICs
  • Radio-Frequency Devices
  • Are there any special considerations for using RF devices?
  • How can I distinguish between the cathode and anode terminals?
  • What is an RF MMIC (RF cell pack)?
  • What is an RF Schottky barrier diode?
  • What is an RF switching diode?
  • What is a PIN diode?
  • What is a variable-capacitance diode?
  • What is important when selecting a variable-capacitance diode?
  • What is "rs" shown in the Electrical Characteristics table?
  • Radio-Frequency Devices
  • Microcontroller
  • Are there any products that allow memory to be connected without using an external address decoder ?
  • What is the meaning of LSB in representation of AD conversion errors ?
  • Does Toshiba provide Flash programming service ?
  • Are there any products with a built-in LCD driver ?
  • How do I connect a microcontroller with 16-bit data bus and a NOR Flash memory with 16-bit data bus ?
  • How do I identify whether a malfunction is caused by hardware or software ?
  • Although operation checks with test tools in the development environment were successful, proper operation cannot be achieved with the actual device.
  • It looks as if the argument is not passed to the function properly.
  • It looks as if the function call returns an unintended value.
  • What is a wide-band-gap semiconductor?
  • What is surge current?
  • What is the temperature characteristic of the SiC-Schottky barrier diode (SBD)?
  • What is thermal runaway * of the SiC Schottky barrier diode (SBD)?
  • Why does the SiC Schottky barrier diode (SBD) have a high withstand voltage?
  • Are power supply decoupling capacitors required?
  • How to calculate current consumption and power consumption?
  • How to set the output current.
  • How many ICs per reel of taping?
  • What wattage resistor should we choose for the EXT terminal？
  • What should be the power supply and input turn-on order/descent?
  • Are there any problems if the SCK waveform is dulled that cascaded LED drivers are used?
  • What is the difference between absolute maximum ratings and operating conditions?
  • What is the definition of Power dissipation?
  • What is a high-side switch?
  • What is a low-side switch?
  • What is a short to ground?
  • What is a short to power?
  • What is the difference between IPD and IPS?
  • What does the diagnostic function available with low-voltage IPDs do?
  • What is the open-load detection function available with low-voltage IPDs?
  • What is active clamping available with low-voltage IPDs?
  • How does a low-voltage IPD sense temperature for thermal shutdown?
  • How does the thermal shutdown of a low-voltage IPD work for device protection?
  • How does the overcurrent protection of a low-voltage IPD work?
  • Are low-voltage IPDs with a high-side and a low-side switch distinguished with part numbers?
  • What is a bias resistor built-in transistor (BRT)?
  • What are the variations in resistance?
  • What is the maximum voltage that can be applied to the base of a bias resistor built-in transistor (BRT)? (How many watts is the allowable power dissipation of the built-in resistors?)
  • How to calculate the allowable power dissipation of a bias resistor built-in transistor (BRT)
  • At what voltages does the bias resistor built-in transistor (BRT) turn on and off?
  • Basic idea of how to calculate the base current and input voltage of a bias resistor built-in transistor (BRT)　
  • About the hFE of a bias resistor built-in transistor (BRT)
  • What types of bias resistor built-in transistors (BRTs) are available?
  • How to select bias resistor built-in transistors (BRTs)
  • How to read the datasheet (electrical characteristics) of a bias resistor built-in transistor (BRT)
  • How does a bias resistor built-in transistor (BRT) operate?
  • If the VCE(sat) of a bias resistor built-in transistor (BRT) does not drop to the design target because of a heavy load, what can I do?
  • What can I do to increase the switching speed of a bias resistor built-in transistor (BRT)?
  • Obtaining necessary voltage when a bias resistor built-in transistor (BRT) is on (i.e., reducing a collector-emitter voltage drop in the “on” state)
  • mosfet_Bipolar-transistors
  • Are the collector and emitter terminals of a bipolar transistor interchangeable?
  • Are there any special considerations for heat dissipation from bipolar transistors?
  • What are the electrical characteristics of bipolar junction transistors (BJTs) ?
  • What is the method for measuring the electrical characteristics of bipolar junction transistors (BJTs) ?
  • How can I calculate the junction-to-ambient thermal resistance, Rth(j-a), of a small-signal transistor?
  • How do npn and pnp transistors operate?
  • Reading individual technical datasheets for bipolar transistors
  • Datasheets and other documents for bipolar transistors contain a safe operating area (SOA) graph. What is it?
  • What is the relationship between transient thermal impedance and safe operating area of bipolar transistors?
  • What are the applications of bipolar transistors (bipolar junction transistors: BJTs) ?
  • What is the relationship between the base current and collector current of a bipolar junction transistor (BJT) ?
  • What types of bipolar transistors (bipolar junction transistors: BJTs) are available?
  • What occurs if reverse voltage exceeding the absolute maximum rated emitter-base voltage is applied to the base terminal of bipolar junction transistors (BJTs) ?
  • A junction FET is widely used for impedance conversion. What is it for?
  • Are there any reasons why junction-to-case (or channel-to-case) thermal resistance is not specified for small-package devices?
  • Are there any special considerations for thermal calculation?
  • What drives transistors: current or voltage?
  • I heard that a junction FET could be used as a constant-current source. How can I create a constant-current source?
  • Is it OK to use a transistor as diodes?
  • Neither Rth(ch-a) nor Rth(j-a) is specified for MOSFETs, IGBTs and bipolar transistors. Why is that?
  • Technical documents for MOSFETs and bipolar transistors contain a safe operating area (SOA) graph. What is it?
  • What is a bias resistor built-in transistor?
  • What is a bipolar transistor?
  • What is a JFET?
  • What is a MOSFET?
  • What is a multi-chip discrete device?
  • What is an IGBT?
  • What kinds of tape packing does Toshiba offer for transistors?
  • What types of transistors are available?
  • Why is no operating temperature range specified?
  • What is a transistor
  • What is an IPD?
  • What is an SOI?
  • How to distinguish high-voltage IPDs for sine-wave and square-wave drive based on part numbers?
  • What are the applications of high-voltage IPDs?
  • How does a high-voltage IPD detect temperature for thermal shutdown?
  • What is the bootstrap circuit in high-voltage IPDs?
  • What is the level-shift driver in high-voltage IPDs?
  • What type of Hall-effect devices is suitable for use with a high-voltage IPD?
  • Does the E-Pad (metal frame) exposed on the surface of a high-side IPD have the same potential as GND?
  • Metals are exposed on the sides of the SSOP30 package of high-voltage IPDs. What voltage potential do they have?
  • Is there a recommended land pattern for high-voltage IPDs?
  • What kind of packages are available for high-voltage IPDs?
  • What kind of control IC can be used in combination with high-voltage IPDs?
  • Is there a way to dissipate heat from high-voltage IPDs?
  • How are local power supply ICs used?
  • What kinds of linear-type local power supply ICs (linear regulators) exist?
  • Do LDO ICs need external parts?
  • About absolute maximum ratings (Understanding datasheet values)
  • About electrical characteristics of LDO (Understanding datasheet)
  • Is it possible to use LDO regulators at low supply voltage? What is the minimum voltage required for their proper operation?
  • How can a low-noise power supply be created using an LDO regulator?
  • What is the resistance of the pulldown resistor connected to the CONTROL pin of the LDO regulator?
  • How does overcurrent protection work in an LDO regulator?
  • When the operating mode of the load-side IC is changed, the output voltage of an LDO regulator drops, causing the IC to malfunction. What can I do to prevent a malfunction?
  • What is the thermal shutdown (TSD) that is available with LDO regulators?
  • Are there any LDO regulators with adjustable output voltage available (requiring external resistors)?
  • What type of capacitor is suitable for use with an LDO regulator?
  • What is the quiescent current of an LDO?
  • Which characteristics in a datasheet should I refer to in order to determine whether a given LDO maintains a regulated output voltage even when input voltage varies?
  • The output voltage of an LDO drops when I increase the output current even though it is operating within the rated conditions. What type of LDO should I choose to avoid such a problem?
  • A small noise is superimposed on the output voltage of an LDO. What can I do to reduce the noise?
  • What voltage is required at the CONTROL terminal to enable an LDO?
  • Why does the LDO output voltage oscillate?
  • How can I quickly bring the output voltage of a circuit with an LDO to zero in order to set a power supply sequence for the load IC?
  • Why is the output of an LDO disabled when its input voltage decreases?
  • How can I prevent the output voltage from overshooting following the application of the control voltage to an LDO?
  • Large inrush current flows when an LDO is enabled. What can I do to prevent this?
  • Is the power-on sequence of the input voltage (VIN) and the control voltage (VCT) of an LDO significant?
  • What is the purpose of the capacitor connected to one of the external resistors for an adjustable-output LDO?
  • Is it OK to reverse-bias an LDO, causing its output voltage to become higher than the input voltage?
  • How can I calculate the junction temperature of an LDO?
  • Is there a low-current LDO with an input voltage greater than 5 V?
  • If you want to step down the supply voltage, select either DCDC converter or LDO regulator?
  • What is an output discharge function of the load switch IC?
  • What is the input-tolerant function?
  • Is it OK to apply the input voltage following the application of an “on” signal to the CONTROL terminal?
  • How can I suppress inrush current with a load switch IC?
  • What is the value of the pull-down resistor connected to the active-High CONTROL terminal of load switch ICs?
  • Does the overvoltage lockout of the load switch IC recover automatically?
  • Does the undervoltage lockout function of the load switch IC provide a hysteresis?
  • What is the FLAG output function of the load switch IC?
  • What is the hold time of a load switch IC?
  • What are the Auto Selection and Manual Selection modes?
  • What is a break-before-make circuit?
  • What is reverse-current blocking using external back-to-back MOSFETs?
  • What is the difference between true reverse-current blocking and reverse-current blocking?
  • How does a load switch IC operate if overcurrent protection is tripped?
  • How can I calculate the power dissipation and junction temperature of a load switch IC?
  • What is a bus switch?
  • How should unused terminals of bus switches and analog switches be handled?
  • What is the difference between CMOS logic IC multiplexers and bus switch multiplexers?
  • Does the bus switch have a tolerant function?
  • How should I select a bus switch?
  • Is there a bus switch that can switch high-speed signals (USB3.0/3.1, PCIe™3.0, etc.)?
  • Are there any restrictions on the power up/down order of the dual power supply bus switch?
  • Can the power of the bus switch is turn off while the signal on?
  • What are the leaks in a dual power bus switch?
  • What is Break Before Make (TBBM)?
  • What is the difference between a bus switch and an analog switch?
  • What do SPST and SPDT in bus switches mean?
  • What are the Switch Characteristics and Timing Characteristics of a bus switch?
  • Are there any concerns when switching high-speed signals using AC coupling capacitors with a bus switch?
  • Are there Mux (multiplexer) / De-Mux (demultiplexer) type bus switches supporting PCIe® Gen 5.0, PCIe®Gen 4.0, Thunderbolt™ 4, USB4®?
  • When a bus switch is used for a differential signal, is it possible to transmit a differential signal whose positive and negative terminals are opposite to the terminal names?
  • When a Mux (multiplexer) /De-Mux (demultiplexer) -type bus switch is used for differential signaling, is the I/O terminal of the bus switch specified for directionality, such as dedicated TX, RX?
  • Is the output status of the sequential circuit such as flip-flops, registers, counters, and one-shot multivibrators determined after the power is turned on?
  • Are there any problems with the input pins of CMOS logic ICs and the bus pins (input/output pins) of bidirectional bus buffers in a floating state?
  • What countermeasures should be taken for signals with a low slew rate (signals with slow input rise and fall times)is input?
  • What is the main reason why a CMOS logic IC is unstable?
  • What are the possible causes when the output voltage of CMOS logic ICs does not rise to the power supply voltage?
  • When a CMOS logic IC is switched, what is the measure for the voltage-waveform (overshoot or undershoot) like the spike that occurs at the output terminal?
  • What are the possible causes of noise in the voltage waveform input to the CMOS logic IC
  • What is the difference between CMOS logic IC 04 (inverter) and U04 (unbuffered inverter)?
  • What are the differences among the general-purpose logic ICs?
  • What are the differences between "Absolute Maximum Ratings" and "Operating Ranges" of the general purpose logic ICs?
  • What is the tolerant function of the general-purpose logic ICs?
  • In what sequence should I turn on and off the power and input signals of a general purpose logic IC?
  • Is a decoupling capacitor required for the supply of a general purpose logic IC?
  • Is it possible to leave the unused inputs of the general purpose logic ICs open?
  • What is bushold of the general-purpose logic ICs?
  • How should unused output pins of the general-purpose logic ICs be handled?
  • Is there a specification for the input-signal rise time and fall time of the general-purpose logic ICs?
  • Are there any regulations for the capacitance of the capacitor attached to the output terminal of a general-purpose logic IC?
  • Is it possible to short-circuit the outputs of multiple general-purpose logic ICs?
  • Is it possible to configure a wired OR circuit by connecting output terminals in general-purpose logic ICs?
  • How can I find the maximum operating frequency of a general-purpose logic IC?
  • How many amperes is the output current of a general-purpose logic IC able to drive?
  • What is fanout of a general-purpose logic IC?
  • How can the power dissipation of a general-purpose logic IC be calculated?
  • What kind of faults could occur if static electricity is discharged (ESD) into a general-purpose logic IC?
  • What types of voltage level translation ICs (level shifters) are available?
  • In order to achieve a step-down (5 V → 3.3 V) and step-up (3.3 V → 5 V) level shift (voltage conversion), how should this be achieved?
  • How can I achieve level shifting from 2.5 V to 1.8 V and vice versa?
  • Are there level shifters (voltage translation IC) compatible with serial communication standards (UART, I2C)?
  • What is the difference between the bus switch type and the buffer type of the voltage-level transformation IC (level shifter)?
  • In what order should the voltage level translation IC (level shifter) of the dual power supply type be powered up and the signals input?
  • Do bidirectional bus buffers have any constraints on the timing of the direction (DIR), bus, and other signals?
  • Is it necessary to pull up the input/output pins of dual power supply bus switch?
  • How can I calculate the maximum operating frequency of a level shifter (voltage translation logic IC)?
  • What is an IGBT?
  • What is the difference between MOSFETs and IGBTs?
  • For what applications should MOSFETs and IGBTs be used?
  • What is the principle of operation of the IGBT?
  • In what structures are IGBTs available?
  • What is a reverse-conducting IGBT (RC-IGBT)?
  • What is conductivity modulation?
  • What is a safe operating area?
  • What is the definition of IGBT power dissipation?
  • What is the tail current of an IGBT?
  • Please give some application examples for IGBTs.
  • Please explain hard switching and soft switching using IGBTs.
  • Please explain the operation of voltage-resonant soft switching of an IGBT.
  • Please explain the operation of current-resonant soft switching of the IGBT.
  • How can I provide protection against the surge voltage generated by the turn-off of an IGBT?
  • Is it possible to connect multiple IGBTs in parallel? If so, is there anything to note about parallel connection?
  • At what voltage should the IGBT gate be driven?
  • Besides silicon, what other types of semiconductors exist?
  • Do semiconductor devices tolerate the rated absolute maximum conditions if such conditions exist only instantaneously?
  • Generally speaking, what does “semiconductor” mean?
  • What is a compound semiconductor?
  • What happens if a P-type semiconductor contacts an N-type?
  • What is an N-type semiconductor?
  • What is a P-type semiconductor?
  • Where can I find information on tape specifications and packing quantities per reel?
  • What are open-loop and closed-loop gains of an op-amp?
  • For what applications are op-amps used?
  • Why is feedback used in op-amps?
  • What is an op-amp?
  • What types of amplifier circuits can be configured using an op-amp?
  • What types of op-amps are available?
  • What is the maximum frequency at which an op-amp can be used?
  • What is the purpose of using a differential amplifier such as an op amp? (Common-mode rejection ratio: CMRR)
  • Characteristics of op-amps (What is the ideal op-amp?)
  • What is the virtual short-circuit (virtual ground) of an op-amp?
  • What is the input offset voltage of an op-amp?
  • Is it necessary to connect bypass capacitors to the power supply terminal of an op-amp?
  • Is there any way to amplify a signal with a voltage close to the power supply level?
  • What types of noise affect an op-amp?
  • Are there any considerations for using an op-amp at low voltage?
  • What is the common-mode input voltage of an op-amp?
  • What does rail-to-rail mean (Rail-to-Rail Op amp) ?
  • How can I provide hysteresis (schmitt trigger) for a comparator?
  • Why are voltage followers prone to oscillation?
  • diode_tvs-diodes
  • What are TVS diodes (ESD protection diodes)?
  • Where are TVS diodes (ESD protection diodes) used?
  • Why are TVS diodes (ESD protection diodes) needed?
  • How do TVS diodes (ESD protection diodes) work?
  • What should I consider when selecting TVS diodes (ESD protection diodes) for high-speed signal lines?
  • How should I select TVS diodes (ESD protection diodes) according to the voltage level of a signal line to be protected?
  • What should I pay attention to when TVS diodes (ESD protection diodes) do not work properly?
  • Is it necessary to use bidirectional TVS diodes (ESD protection diodes) to protect against both positive and negative ESD events?
  • Board design considerations for TVS diodes (ESD protection diodes)
  • Could ESD events destroy TVS diodes (ESD protection diodes)? (What is their ESD tolerance level?)
  • How to select TVS diodes (ESD protection diodes)
  • What is a TLP test?
  • ESD Protection for Wi-Fi® Antennas and Other RF Applications
  • The quality of an RF signal should not be degraded when there is no ESD event
  • The device under protection (DUP) should not be degraded or destroyed in the event of an ESD strike
  • Considerations for board design
  • What is electrostatic discharge (ESD)?
  • What is Electrostatic discharge (ESD) testing？
  • What is an ESD protection diode？
  • How do ESD protection diodes operate？
  • What are the typical electrical characteristics of ESD protection diodes?
  • Are there board design considerations for adding ESD protection diodes？
  • How do I choose an ESD protection diode?
  • Even ESD protection diodes fail to protect the DUP. What is the cause of its destruction?
  • What is a surge?
  • What is IEC61000-4-5?
  • What is the difference between ESD protection diode and varistor?
  • Motor Driver ICs
  • What is the meaning of alphanumeric characters at the end of the product name?
  • Please tell me how to calculate the current consumption and power consumption of the meter driver.
  • What are the differences between the absolute maximum ratings and the recommended operating conditions?
  • Please explain the concept of permissible loss for motor drivers.
  • Is it OK to connect capacitors to the output lines of a motor driver IC?
  • Is a decoupling capacitor required on the power supply pins of the IC?
  • Is it okay to make deliberate use of body diodes of MOSFETs?
  • MOS is sensitive to static electricity. How do you protect MOSFETs from static electricity?
  • How will it affect the device when static electricity is applied to the logic pins? And how to deal with the issue?
  • What are the taping specifications and how many ICs per reel?
  • Are there any land pattern preferences or recommendations?
  • How can i purchase samples and evaluation boards?
  • Is there anything to keep in mind when using a sensorless BLDC motor?
  • What are the benefits of lead angle control in brushless motors?
  • What causes motor failure and sine-wave distortion?
  • What is the maximum rotation speed that a sine wave drive motor driver IC can support?
  • What does the symbol at the end of the product name mean?
  • How to distinguish RoHS compliant transistor array products?
  • Is Halogen-free available?
  • What is eFuse IC (electronic fusing)?
  • What are the advantages of using eFuse ICs (electronic fuses) over glass fuses and PTC thermistors (polyswitches, polyfuses)?
  • What applications are eFuse IC (electronic fuses) used for?
  • Can eFuse IC (electronic fusing) be used to protect USB VBUS from short circuits and IEC62368 Qualification?
  • What are the differences between eFuse IC (electronic fuses) and load switch ICs?
  • What functions are built into eFuse IC (electronic fusing)?
  • When a spike-voltage is applied to the input or output terminals of eFuse IC (electronic fuse),How do I take measures?
  • How do I use eFuse IC (electronic fuses) and load switch ICs separately?
  • How does overcurrent protection of eFuse IC (electronic fuses) work?
  • How does short-circuit protection of eFuse IC (electronic fuses) work?
  • What is the difference between the overcurrent protection and the short-circuit protection of eFuse IC?
  • How does thermal shutdown(TSD) of eFuse IC (electronic fuses) work?
  • How does overvoltage protection on eFuse IC (electronic fuses) work?
  • What is the slew rate control function of eFuse IC (electronic fuses) intended to do? And how does it works?
  • What is the under voltage lockout (UVLO) function of eFuse IC (electronic fuses) intended to do? And how does it works?
  • Can eFuse IC (electronic fuse) be used for hot-swap (hot-line insertion/extraction)?
  • Does the eFuse IC (electronic fuse) have reverse current blocking(RCB) function?
  • Power Management ICs
  • Intelligent Power ICs
  • What is the symbol at the end of the product name?
  • How do I calculate the current consumption and power dissipation?
  • How do I estimate the junction temperature?
  • How do I obtain the thermal resistance of the heat sink?
  • Is there a problem with installing a capacitor to the output?
  • What is the electric potential of the heat sink (metallic surface) on back side of IC package? Is that a GND?
  • What kind of material SiC is? And what kind of characteristics does SiC MOSFET have?
  • Can SiC MOSFET be connected in parallel and used?
  • Is the back of the SiC MOSFET package insulated?
  • What are the characteristics of body diode in SiC MOSET?
  • What changes when Si MOSFET/IGBT is replaced with SiC MOSFET?
  • What should be noted when setting SiC MOSFET gate voltage (VGS)?
  • What is Thermoflagger™?
  • What specific applications are Thermoflagger™ used for?
  • How many PTC thermistors can be connected simultaneously?
  • Is it possible to identify the heating point when several PTC thermistors are connected?
  • How accurate is the detected temperature?
  • What temperature ranges can be detected?
  • How do I select a PTC thermistor to use with Thermoflagger™?
  • long-term-supply-of-semiconductor-products
  • Highlighted Contents
  • The Journey of Motor Control
  • Passion For Power Solutions
  • SiC MOSFETs support downsizing and low-loss power supplies
  • 3-Phase AC 400 V Input PFC Converter Reference Design
  • 5 kW Isolated Bidirectional DC-DC Converter Reference Design
  • High accurate SPICE models are released
  • High accurate SPICE model for low voltage MOSFET (12V-300V)
  • High accurate SPICE model for medium to high voltage MOSFET (400V-900V)
  • High accurate SPICE model download lists
  • Optimized Motor Control Products | Toshiba Motor Control Solutions
  • MBD (Model Based Development) using high-speed, high-precision thermal and noise simulation technology for automotive power semiconductor devices
  • How to install and use Accu-ROM™ on Ansys® Twin Builder™
  • Toshiba GaN Power device balances performance and ease of use
  • Cooling simulation model: Expanding the number of Simplified CFD Models for three-dimensional thermal fluid analysis in MOSFETs
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  • Thermal Management for Designs Using Discrete Semiconductor Devices
  • Half-bridge DC-DC Converter Scheme Shrinks Power in Data Centers
  • Developing Thermal Design Guidelines for Power MOSFETs in a Chassis
  • Power semiconductors. Essential devices for a carbon-neutral future.
  • Building a More Efficient DC-DC Converter: Efficiency Evaluation and Loss Analysis of a 300 W Isolated DC-DC Converter
  • The Online Circuit Simulator eliminates the need for special software
  • Reference Design of High Efficiency Power Supply for Server
  • RF SPDT (Single-Pole Double-Throw that realizes high-power input in a small package.)
  • Model-Based Development (MBD) initiatives for automotive semiconductor products
  • 3D Thermal Fluid Analysis of MOSFETs: Expanding Simplified CFD Model Suitable for cooling simulation
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  • DSOP Advance, a Thermally Enhanced Double Side Cooling Package, improves the efficiency of power supply for high-current applications.
  • The U-MOSⅨ-H series are the ideal MOSFETs for improving the efficiency of switched-mode power supplies.
  • A wide choice of product variations ranging from ultra-small packages to general-purpose packages.
  • Pch MOSFET series using latest process
  • The U-MOSⅨ-H series has a greatly improved figure of merit that represents losses.
  • Switching noise reduction by snubber circuits (Low Spike Technology)
  • Toshiba's MOSFETs are ideal for low-voltage drive equipment.
  • Contributes to reducing loss of switching power supplies
  • Efficiency Improvement by Multi-Level Inverter with 150 V MOSFET
  • U-MOS X-H series 150 V MOSFET ideal for efficient switching power supplies
  • 30V N-Channel Common-Drain MOSFET Suitable for USB Devices and Battery Pack Protection
  • Automotive MOSFETs
  • Process Trends of Automotive MOSFETs
  • Switching characteristics of the N-ch U-MOS series
  • Package Trends of Automotive MOSFETs
  • Automotive applications drive miniaturization of small MOSFET sets
  • High & Low Output Solutions | Toshiba 400V - 900V MOSFETs
  • State-of-the-art super junction MOSFET DTMOSVI
  • Commercialization of new TO-247-4L packaging 600-V Super Junction Power MOSFET (DTMOSIV-H Series)
  • State-of-the-art double-diffusion MOSFET(D-MOS)π-MOSIX series
  • Contributes to Higher Efficiency of switched-mode power supply
  • 600V Super Junction Structure N-channel Power MOSFET DTMOSⅥ Series "TK024N60Z1" Improves Efficiency of Power Supply
  • Small Low-On-Resistance MOSFETs
  • Low On-Resistance
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  • 2nd Generation Features of SiC MOSFETs
  • Loss-Comparison between SiC MOSFET and Si IGBT
  • 2nd Generation SiC MOSFET/IGBT Switching Loss Comparison
  • 3rd generation SiC MOSFETs that contributes to lower loss of power supply in application
  • 3rd generation SiC MOSFETs with New package TO-247-4L(X) released
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  • Compatibility with 3.3-V power supply and low power consumption
  • Broad lineup that supports transmission speeds ranging from 20 kbps to 50 Mbps
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  • Compatible with full-swing output
  • UVLO function support
  • Insulated gate driver expands the freedom of inverter drive circuit design
  • What is the gate-driver that facilitates the overcurrent protection design of inverter applications
  • Photocoupler for MOSFET and IGBT Gate Driver Suitable for Industrial Equipment
  • Lineup Expansion of Photocouplers for MOSFET and IGBT Gate Driver Suitable for Industrial Equipment
  • Photocouplers for IPM Interface
  • Response to higher speeds
  • Higher common-mode transient immunity (CMTI)
  • Support for high active and low active IPM
  • Isolation Amplifiers & Isolated Delta - Sigma Modulator
  • Implementing high-precision isolated signal transmission of input analog signal
  • Contributing to lower power consumption and stabilization of primary power supply design
  • Contributing to reduction of mounting space by adoption of a thin package
  • Photorelays (MOSFET Output)
  • What is a photorelay?
  • Photorelays using the latest-generation U-MOS
  • Small S-VSON4 packages
  • High-current (high-capacity) photorelay
  • UL 508 certification
  • 110°C Operation Guaranteed, High-capacity Compact Photorelay
  • Contributing to improved reliability of equipment in intense noise environments
  • Compact photorelays with low voltage drive and high temperature operation rating
  • Photocouplers for high-speed communications
  • Small photorelay with high-speed switching
  • Small Photorelay with High ON-State Current and High-Speed Switching
  • Suitable for driving high voltage power MOSFET
  • Standard Digital Isolators
  • Over 100kV/μs high Common Mode Transient Immunity (CMTI)
  • Isolated 4 channel logic supporting 150Mbps data rate
  • Pulse Width Distortion (PWD) 3ns (max) corresponds to 150Mbps high-speed communication
  • What is the isolation life of the standard digital isolator "DCL54x01"?
  • What is the impulse voltage tolerance of the standard digital isolator "DCL54x01"?
  • Standard Digital Isolator with Robust Electromagnetic Compatibility (EMC)
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  • ICs for Bluetooth® wireless communication
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  • Increased efficiency and increased current through multi-chip modules with built-in MOSFET
  • Reduction of Loss by the Latest High-breakdown-voltage SOI Processes
  • Reduction of mounting area by small surface-mount package compatible with high voltage
  • 600 V/3 A Small Intelligent Power Device for Brushless DC Motor Drives
  • Automotive Driver ICs
  • High-side and low-side switch products
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  • Optimal driver ICs for various automotive applications
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  • Supports all applications (industrial equipment-portable equipment) with an abundant lineup
  • What are the additional functions (input tolerant, power down protection) required for voltage level conversion and partial power down?
  • One-Gate Logic ICs (L-MOS)
  • One-gate logic (L-MOS) 7UL series (7ULxG) with 0.9V operation guarantee
  • L-MOS Supports industrial and portable equipment applications with wide lineup
  • Level Shifters
  • Dual power supply level shifter
  • Why are Level-shifters needed?
  • 4-bit Dual-Supply Bus Transceivers Supporting a Minimum Voltage of 0.8V
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  • Dual Power supply bus switch level shifter capable of voltage level conversion
  • Bus switch supporting high-speed digital signals of PCIe® Gen 5.0 and USB4®
  • Diodes
  • SiC Schottky Barrier Diodes
  • SiC devices suitable for power supply circuits
  • Improved junction barrier Schottky (JBS) structure to reduce the leakage current and increase the surge current capability: SiC Schottky barrier diodes (SiC SBDs)
  • SiC Schottky barrier diodes (SBDs) with low switching loss
  • High withstand voltage (reverse voltage) characteristics of SiC SBDs
  • Contributes to high efficiency and low loss of high output power supply
  • 3rd generation SiC Schottky barrier diode
  • TVS Diodes (ESD Protection Diodes)
  • ESD tolerance
  • ESD-pulse absorption performance for reducing 1st peak voltage
  • Extensive package lineup: developing smaller packages
  • Low dynamic resistance
  • Extensive package lineup: multi-bit packages
  • Ensuring signal quality: insertion power loss
  • Schottky Barrier Diodes
  • Schottky Barrier Diodes
  • Improved junction barrier Schottky (JBS) structure to reduce the leakage current and increase the surge current capability: Schottky barrier diodes (SBDs)
  • Zener Diodes
  • Zener diode for overvoltage protection
  • Zener diode that protects from various surges of overvoltage pulse
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  • Motor Driver ICs | Motor Control Solution | Motor Control Made Simple
  • Brushless DC (BLDC) Motors for Efficient Motor Control | Toshiba
  • Intelligent Phase Control Tech for Brushless DC Motors | Toshiba
  • Toshiba Releases Three-Phase Gate Driver ICs that Can Accommodate a Wide Range of Applications
  • Brushed DC Motor Driver ICs
  • Customizable Motor Drivers for Stepping/Brushed DC Motors | Toshiba
  • Toshiba Releases H-bridge Driver for Brushed DC Motors with Current Monitoring Function
  • Stepping Motor Driver ICs for Accurate Position Control | Toshiba
  • Efficient Motor Control at High RPM | Toshiba ADMD Technology
  • Accurate Motor Drive & Reduce BOM Costs | Toshiba ACDS Technology
  • Efficient Motor Control and Heat Reduction | Toshiba AGC Technology
  • Finer Motor Control with Stepwise Current | Toshiba Microstepping Tech
  • Toshiba 130-nm BiCD High-Voltage Analog Process for Compact Drivers
  • Motor Driver IC PSpice® Models Download Page | Toshiba
  • Sensors
  • Superior Linear Sensors | CMOS Image Sensors | Toshiba CCD Sensors
  • High-Speed Linear Image Sensor with Low EMI | Toshiba TCD2726DG
  • Monochrome sensor
  • Color sensor
  • Example of use
  • Toshiba Display Interfaces | Superb Picture Quality
  • Display Interface Bridge ICs | Toshiba Electronics
  • Camera Interface Bridge l MIPI Interface Bridge l fast imaging trasfer
  • HDMI® Interface Bridge ICs | Toshiba Electronic Devices
  • Expand I/O capabilities | Industrial GPIO Expander | Toshiba
  • Power Management ICs
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  • Noise reduction due to high ripple rejection ratio
  • Fast load transient response performance
  • Reduction of power consumption by low dropout voltage
  • Ultra-low Quiescent current
  • Extensive package lineup
  • Various additional functions
  • How to manage the power supply of mobile devices with high accuracy
  • How to drive battery-powered devices for a long time?
  • Contributes to downsizing of equipment and reduction of power consumption
  • Toshiba releases the TCR3DMxxA and TCR3EMxxA Series of LDO regulators in Toshiba Semiconductor (Thailand)
  • Load Switch ICs
  • Overcurrent protection function
  • Overvoltage protection function
  • Inrush current reduction circuit
  • Thermal shutdown
  • Extensive package lineup
  • Low input voltage operation/low on-resistance characteristics
  • Low current consumption characteristic of load switch ICs
  • Smaller Area and Higher Functionality
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  • eFuse ICs for Advanced Circuit Protection | Toshiba
  • High-precision overvoltage clamp function
  • IEC 62368-1 Safety standard certification
  • Function to suppress inrush current
  • All major protection functions are realized in one package
  • Quick short-circuit protection
  • High-precision overcurrent protection
  • Thermal shutdown function and recovery operation
  • Reverse current blocking function
  • The fuse electronization changes the design?
  • How quick is the protection speed of the electronic fuse?
  • MOSFET Gate Driver ICs
  • MOSFET Gate Driver IC Overview
  • Example of load switch circuit with MOSFET Gate Driver IC and N-channel MOSFET.
  • Linear ICs
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  • Contributing to long-term operation of equipment, ultra-low-current operational amplifier
  • Low-voltage, wide-range input signals can be amplified and processed
  • Ultra-low-noise Operational Amplifier Optimal for Sensor Small-signal Amplification
  • Extensive package lineup
  • Realizes high-sensitivity and high-precision sensing performance
  • Transistor Arrays
  • Realize low on resistance from bipolar output to DMOS output
  • Package lineup
  • Automotive audio power amplifier ICs
  • 4-channel High-Efficiency Automotive Audio Power Amplifier IC: TCB701FNG
  • 4-channel High-Efficiency Automotive Audio Power Amplifier IC Featuring Maximum 45W Output: TCB702FNG
  • Automotive Audio Power Amplifier IC with Strong Resistance to Power Surges: TCB503HQ
  • Current-Feedback 4-channel Automotive Audio Power Amplifier IC with Built-In Full-Time Offset Detection: TCB502HQ
  • 45-W class 4-channel Automotive Audio Power Amplifier IC with using a new CD-0.13 process: TCB001HQ
  • Current-Feedback 4-channel Automotive Audio Power Amplifier IC with Built-In Full-Time Offset Detection: TCB501HQ
  • Supports external audible outputs from vehicles, allowing use of electric vehicle warning sound systems in HEVs and EVs: TB2909FNG
  • Thermoflagger™ (Over temperature detection IC)
  • Over temperature detection solution with Thermoflagger™
  • Automotive Interface Bridge ICs l Smart Driver Interface | Toshiba
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  • Automotive Ethernet Bridge l In-Car Network Systems | Toshiba
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  • TC90193SBG
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  • 3-phase BLDC Motor Pre-driver IC for Sine Wave Current Control: TB9080FG
  • Sensorless 3-phase BLDC Motor Pre-driver IC: TB9061AFNG
  • Three-Phase Brushless Sensorless Pre-driver IC TB9062FNG
  • 3-Phase BLDC Motor Pre-driver IC for EPS Applications: TB9081FG
  • Gate-Driver IC for Automotive Three-Phase Brushless Motor: TB9083FTG
  • Gate-Driver IC for Automotive Three-Phase Brushless Motor: TB9084FTG
  • Automotive TVS Diodes (ESD Protection Diodes)
  • ESD tolerance
  • Low dynamic resistance
  • Ensuring signal quality: insertion power loss
  • Extensive product lineup in a wide choice of packages: developing smaller packages
  • Automotive Stepping Motor Driver ICs
  • Automotive Stepping Motor Driver IC:IC TB9120FTG
  • Automotive Brushed DC Motor Driver ICs
  • 1-Channel Brushed DC Motor Driver IC: TB9051FTG
  • H-bridge Pre-driver IC l Power Steering Power Production | Toshiba
  • Automotive DC motor driver IC with LIN slave function：TB9058FNG
  • PWM 2ch H-Bridge DC Brushed Motor Driver Integrated Circuit (IC) for Automotive
  • Gate Driver IC for Automotive Brushed Motors
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  • Product Introduction
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  • Expanding the line-up of general purpose logic ICs for automotive devices that can be used for various applications by extending the operating temperature range and satisfying the reliability requirements of AEC-Q100 : TC7WPB9306FK, TC7WPB9307FK, TC7SB66CFU, TC7SB67CFU
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  • Toshiba Achieves World’s Highest Areal Density in a 2.5-Inch Hard Disk Drive
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  • Toshiba Electronic Devices & Storage’s Status and Measures in Response to the Earthquakes in Ishikawa Region (Sixth Report, Final)
  • Toshiba Expands Lineup of Small Load Switch ICs for Mobile Devices
  • New Photorelay from Toshiba Features Industry’s Smallest Package
  • Toshiba Announces First MN Series HDDs Expanding Disk Drive Model Category Line-Up
  • Toshiba Introduces New Series of Gate Drive Photocouplers
  • Toshiba is the Fastest Growing HDD and SSD Vendor of 2016
  • Toshiba Introduces Low Reverse-Current Schottky Barrier Diodes for Voltage Boosting Circuits
  • Toshiba Announces Volume Availability of 8TB HDD Model - Company's Largest Enterprise Capacity HDD
  • Toshiba Announces VMware vSAN Certification for PX05S Enterprise SAS SSDs
  • Toshiba Launches Industry’s Smallest 1.3A LDO Regulator
  • Toshiba Launches 8TB High-Reliability Consumer HDD Series
  • Toshiba Expands Enterprise SATA SSD Options on Dell EMC PowerEdge Servers
  • Toshiba Data Center SATA Solid State Drives Expand NetApp SolidFire All-Flash Array Offerings
  • Toshiba Introduces Compact Photorelays with Improved Isolation Voltage of 3.75kV
  • Toshiba Demonstrates Latest 64-Layer BiCS FLASH™ On Client NVM Express™ SSD at Dell EMC World
  • Toshiba Introduces 40V/45V N-Channel Power MOSFETs with Industry-Leading Low On-Resistance
  • New 60V, 100V Photorelays from Toshiba Feature Industry’s Smallest Mounting Area
  • Toshiba Unveils NVME SSDs Using 64-Layer, 3D Flash Memory
  • Toshiba Introduces New Photocouplers for Automotive Applications
  • Toshiba Announces Next Generation 15,000 RPM Enterprise Performance HDD
  • Toshiba Adds Dual-Sided Cooling to Power MOSFETs for Motor Control, Power Supplies
  • New Smart Gate Driver Photocoupler from Toshiba Features Improved Desaturation Sensing Function
  • Toshiba Introduces ESD Protection Diodes for High-Speed Interfaces in Mobile Devices
  • Toshiba Bluetooth Low Energy Product Lineup Supports New Bluetooth Mesh Standard
  • Toshiba NVME SSDs Now Available with Lenovo’s New ThinkSystem and ThinkAgile Servers
  • Toshiba Introduces TR200 SATA Retail SSD Series with 64-Layer 3D Flash Memory
  • Toshiba Introduces New 20V MOSFETs with Low On-Resistance Specifications
  • Toshiba Unveils Single Package SSDs with 64-Layer 3D Flash Memory
  • Toshiba Expands Lineup of Photorelays in DIP8 Packages
  • Toshiba Announces NVMe over Fabrics Software Technology for Cloud Data Centers
  • Toshiba Memory Corporation Introduces World’s First Enterprise-Class SSDs with 64-Layer 3D Flash Memory
  • Toshiba Announces Next Generation Client SSD with 64-Layer 3D Flash Memory
  • Toshiba Wins Most Innovative Flash Memory Technology Award at Flash Memory Summit 2017
  • Toshiba Announces New CMOS LDO Voltage Regulators
  • Toshiba Announces 8TB High-Performance Internal Hard Drive
  • Toshiba Announces New 1TB Hard Disk Drive for Mobile Client Storage Applications
  • New ESD Bidirectional Protection Diode from Toshiba Designed for Mobile Devices
  • Toshiba Announces 10TB Enterprise Capacity HDD Generation with SATA Model Line-Up
  • New Stepper Motor Drivers from Toshiba Improve Motion Accuracy and Motor Efficiency
  • Toshiba Introduces Photocouplers for High-Speed Communications
  • Toshiba Expands U-MOS IX-H MOSFET Family, Adds 40V N-Channel Devices
  • Toshiba Introduces New, Compact N-Channel Power MOSFETs for Load Switching in Industrial, Automotive and Lighting Applications
  • Toshiba and Newisys Deliver HPC Storage with NVMe-oF at SuperComputing 2017
  • Toshiba Announces 10TB Surveillance Hard Drive
  • Toshiba Announces 10TB NAS-Class Hard Drive
  • Toshiba Launches World’s First 14TB HDD with Conventional Magnetic Recording
  • Toshiba Introduces New Bluetooth Low Energy IC for Automotive Applications
  • Toshiba Memory America’s Storage Node Software Obtains Industry-First NVMe-oF Certification
  • Toshiba Introduces New 10,500RPM Enterprise Performance HDD Model Generation
  • Relationship with Wor(l)d Media Technology Corp.
  • Toshiba Introduces New Bluetooth 5 Compliant ICs with Industry Leading Sensitivity Level of -105dBm (at 125kbps)
  • Toshiba Unveils Mainstream RC100 NVMe SSD Series at CES 2018
  • Toshiba Reveals Fresh, Unified Canvio® Portable Hard Drive Models
  • Toshiba Announces New 2TB Hard Disk Drive for Client Storage Applications
  • Toshiba Memory Corporation Adds New Lineup of Data Center SSDs Featuring BiCS FLASH 64-Layer 3D Flash Memory
  • Toshiba Launches KumoScale Storage Software for Cloud Infrastructures
  • Toshiba Releases New, Powerful Surveillance and Video Streaming Internal Consumer Hard Drives
  • Toshiba Releases Full Line-Up of Consumer Internal Hard Drives
  • Toshiba Releases Medium Voltage Photorelay for Industrial Applications
  • Toshiba Releases Interface Bridge Devices for Automotive Infotainment Applications
  • Toshiba Announces 14TB HDD Availability on Select Supermicro Storage Servers
  • Toshiba develops low reverse-current Schottky diode with improved thermal performance
  • Toshiba Announces New MN07 Series Hard Drives For NAS Platform OEMS And Integrators
  • Toshiba Gives More Capacity To SAS HDD Models
  • Toshiba announce next-generation superjunction power MOSFETs
  • Toshiba Launches High Current Photorelays for Mechanical Relays Replacement in Industrial Applications
  • Toshiba announces Bluetooth® 5 IC for Automotive Applications
  • Toshiba unveils 130nm Fit Fast Structured Array development platform
  • Toshiba Adds New 4TB CANVIO® Portable Hard Drive Model for Safe and Reliable Personal Data Storage
  • Toshiba Adds New 12TB and 14TB Helium-Sealed Models to Both the N300 NAS and X300 Performance Hard Drive Product Line
  • Toshiba Launches H-Bridge Driver IC Supporting 1.8-7V/4.0A Motor Drive
  • Toshiba Announces 16TB MG08 Series Hard Disk Drives
  • Toshiba Announces Latest Ethernet Bridge IC for Automotive and Industrial applications
  • Toshiba’s New Small Surface Mount LDO Regulators Lower Power Consumption and Bring Longer Operating Times to Battery-driven Devices
  • Toshiba Launches Low Power Consumption Brushed DC Motor Driver IC with Popular Pin-assignment HSOP8 Package
  • Toshiba Announces New Canvio® Slim Portable Hard Drive
  • Toshiba To Showcase Latest Enterprise Hard Drive Tech at HPE Discover 2019
  • Toshiba Launches 600V Sine-Wave PWM Driver IC for Three-Phase Brushless Motors
  • Toshiba’s New Three-Phase Brushless Motor Control Pre-Driver IC Features Intelligent Phase Control and Closed Loop Speed Control
  • Toshiba Releases Surveillance 6TB HDDs for DVR and NVR Platforms
  • Media Contacts
  • Fast Facts
  • Product Overview
  • A lineup expansion of small MOSFETs for automotive equipment offering low power consumption with low On-resistance: SSM6J808R, SSM6K819R
  • Toshiba Launches Compact High-Speed Communication Logic Output Photocoupler for Programmable Logic Controllers
  • Toshiba’s New 100V N-channel Power MOSFET Helps Reduce Power Consumption of Automotive Equipment
  • Toshiba Launches Compact, Low Power, High Resolution Micro-stepping Motor Driver IC
  • Toshiba Introduces Cutting-edge Generation SOI Process for RF Switches and Low-Noise Amplifier ICs for 5G Smartphones
  • Toshiba Adds New Low Power Consumption Brushed DC Motor Driver IC
  • Toshiba Launches Two New 80V N-channel Power MOSFETs
  • 04
  • Toshiba Launches Improved 1350 V IGBT Device for Domestic Appliance Applications
  • 40 V/60 V N-Channel Power MOSFETs
  • Toshiba Releases MOSFET Gate Driver Switch IPD for Automotive ECUs
  • Toshiba Announces Compact Intelligent Power device with 600V Rating
  • Toshiba Adds Automotive Display Interface Bridge ICs for IVI Systems
  • Toshiba Launches Lens Reduction Type 1500-Pixel Monochrome CCD Linear Image Sensors for Industrial Equipment
  • Toshiba Releases Industry’s First High-Speed Communications Photocouplers that Can Operate from a 2.2V Supply
  • Lineup expansion of SiC SBDs of 650 V contributing to high efficiency of power supply PFCs : TRS12N65FB, TRS16N65FB, TRS20N65FB, TRS24N65FB
  • Toshiba Launches Constant-Current 2-Phase Stepping Motor Driver for Automotive Applications
  • Toshiba’s New Device Structure Improves SiC MOSFET Reliability
  • Toshiba Collaborates with MikroElektronika to Create Evaluation Boards for Motor Driver ICs
  • Toshiba’s New Photorelays with Low Trigger LED Current Contribute to Low Power Consumption in Battery-Powered Equipment
  • Toshiba’s New Photorelays Contribute to Equipment Downsizing by Reducing Mounting Density
  • Toshiba Launches Photorelays in New Package for High-density Mounting
  • Toshiba and Japan Semiconductor Develop Technology to Improve Reliability of Pch-LDMOS for Analog ICs
  • Toshiba and Japan Semiconductor Develop Highly Tolerant LDMOS Cell Array that Limits Influence of Negative Carrier Injection and ESD
  • Toshiba Launches Ultra-Low Current Consumption CMOS Operational Amplifier that Contributes to Longer Operating Hours of Battery-Operated Devices
  • Toshiba Releases Small, Low On-resistance Common-drain MOSFET that Contributes to Longer Battery Operating Hours
  • Toshiba Releases New 40V N-Channel MOSFET | News Update
  • Toshiba Electronic Devices & Storage Corporation Implements New Strategies for System LSI Business
  • Toshiba Launches 1200V Silicon Carbide MOSFET that Contributes to High-efficiency Power Supply
  • H-bridge | Brushed DC Motors & Stepping Motors | Toshiba
  • Toshiba Launches High Ripple-Rejection Ratio, Low-Noise LDO Regulators with Enhanced Power-Line Stabilization
  • Toshiba Expands Portfolio of Low-Power Performance-Enhanced 32-Bit Microcontrollers Using Arm® Cortex®-M Technology
  • Toshiba Introduces High-Current Photorelay Optimised for Industrial Implementation
  • Toshiba Electronic Devices & Storage Corporation Announces Major Investment in Power Devices Business
  • Expansion of the lineup of 80 V N-channel power MOSFETs with the adoption of a new process that helps to improve the efficiency of power supplies : TK2R4E08QM, TK3R3E08QM, TK5R3E08QM, TK7R0E08QM, TK2R4A08QM, TK3R2A08QM, TK5R1A08QM, TK6R8A08QM, TK5R1P08QM, TK6R9P08QM
  • Toshiba Introduces Lens Reduction Type CCD Linear Image Sensor for A3 Multifunction Printers
  • Toshiba’s Triple-Gate IGBT Power Semiconductors Cut Switching Power Losses by 40.5%
  • Toshiba’s New Device Structure Improves SiC MOSFET High Temperature Reliability and Reduces Power Loss
  • Toshiba Positively Evaluates No-Solder Connector Technologies for the Trillion-Node Engine IoT Open Platform
  • Toshiba Releases Arm® Cortex®-M4 Microcontrollers for Motor Control as First Products in the TXZ+TM Family Advanced Class
  • Toshiba Nearline HDD Shipment & Capacity Sets New Company Record In 2CQ21
  • Toshiba Releases New M4G Group of Arm® Cortex®-M4 Microcontrollers for High-speed Data Processing in the TXZ+TM Family Advanced Class
  • Toshiba Releases High Voltage 1500V Automotive Photorelay
  • Lineup Expansion of Power MOSFETs of SOP Advance(WF) Packages That Contribute to Lower Power Consumption for Automotive Equipment
  • Toshiba’s World’s First[1] Current Sensing, Technology Implemented in GaN Devices Enables Lower Power Loss, Higher Accuracy Current Sensing, and Smaller Power Supply Systems
  • Toshiba to Expand Power Semiconductor Production Capacity with 300-millimeter Wafer Fabrication Facility
  • Lineup Expansion of New Generation Super Junction Structure N-Channel Power MOSFET “DTMOSVI Series” That Helps Improve Efficiency of Power Supplies
  • Toshiba Launches Ultra-Low Capacitance TVS Diode that Protects High-Frequency Antennas of IoT Devices from ESD
  • Lineup Expansion of Zener Diodes for Power Line Protection Contributing to Improvement of Equipment Reliability
  • Toshiba Releases New MOSFET Gate Driver IC that Will Help to Reduce Device Footprints
  • Toshiba Adds Five New MOSFET Gate Driver ICs that Will Help Reduce Device Footprints
  • Toshiba and Japan Semiconductor Develop Highly Reliable Versatile Analog Platform with Embedded Non-Volatile Memory for Automotive Applications
  • Smart Gate Driver Photocoupler with 2.5 A Output Current Whose Output Type is Widely Used in Industrial Equipment
  • Toshiba’s New SiC MOSFETs Delivers Low On-Resistance and Significantly Reduced Switching Loss
  • Toshiba Launches its 3rd Generation SiC MOSFETs that Contribute to the Higher Efficiency of Industrial Equipment
  • Toshiba Releases Automotive 40V N-channel Power MOSFETs with New High Heat Dissipation Package that Supports Larger Currents for Automotive Equipment
  • Toshiba Releases Intelligent Power Devices That Help Reduce Mounting Areas
  • Lineup Expansion of Motor Driver ICs
  • Toshiba’s Newly Developed 2200 V SiC MOSFETs Deliver Low Power Loss that Contributes to the Simplification, Miniaturization and Weight Reduction of Inverter Systems
  • Toshiba Releases 600V Small Intelligent Power Devices for Brushless DC Motor Drives
  • Toshiba Releases 3rd Generation SiC MOSFETs for Industrial Equipment with Four-Pin Package that Reduces Switching Loss
  • Launch of 20 Surge-Protection Zener Diode Products that are Suitable for Automotive Equipment
  • Toshiba Develops Industry’s First 2200V Dual Silicon Carbide (SiC) MOSFET Module That Contributes to High Efficiency and Downsizing of Industrial Equipment
  • Lineup Expansion of 80 V N-Channel Power MOSFET Products in Toshiba’s U-MOSX-H Series that Help Reduce the Power Consumption of Power Supplies
  • Toshiba Launches Automotive 40V N-Channel Power MOSFETs with New Package that Contributes to High Heat Dissipation and Size Reduction of Automotive Equipment
  • Toshiba Releases 3rd Generation 650V SiC Schottky Barrier Diodes that Contribute to More Efficient Industrial Equipment
  • Toshiba Introduces ARM® Cortex®-M3 Microcontrollers “TXZ+™ Family Advanced Class” with 1MB Code Flash Memory Supporting Firmware Updates without Interrupting Microcontroller Operation
  • Toshiba Launches Motor Driver ICs with Small Package and Reduced External Parts that Save Space on Circuit Boards
  • Toshiba Releases 600V Super Junction Structure N-Channel Power MOSFET that Helps to Improve Efficiency of Power Supplies
  • Toshiba Releases 100V N-Channel Power MOSFET That Supports Miniaturization of Power Supply Circuits
  • Lineup Expansion of 80 V/100 V Automotive N-Channel Power MOSFETs that Use L-TOGL™ Package Supporting Large Currents with High Heat Dissipation
  • Bipolar Transistors Contribute to the Reduction of Environmental Impacts
  • Toshiba Launches Small and Thin Common-Drain MOSFET Featuring Very Low On-Resistance Suitable for Quick Charging Devices
  • Toshiba Releases Digital Isolators that Contribute to Stable High-Speed Isolated Data Transmissions in Industrial Applications
  • Toshiba Announces Thermoflagger™, a Simple Solution that Detects Temperature Rises in Electronic Equipment
  • Toshiba Releases Small Photorelay with High Speed Turn-On Time that Helps Shorten Test Time for Semiconductor Testers
  • Toshiba Launches High Voltage, Low Current Consumption LDO Regulators that Help to Lower Equipment Stand-By Power
  • Toshiba Starts Construction of 300-milimeter Wafer Fabrication Facility for Power Semiconductors
  • Toshiba Sample Software Package Expands Microcontroller Development Tools Ecosystem
  • Toshiba Expands Line-up of Thermoflagger™, a Simple Solution that Detects Temperature Rises in Electronic Equipment
  • Toshiba Launches Small Photorelay Suitable for High-Frequency Signal Switches in Semiconductor Testers
  • Toshiba Releases 600V Small Intelligent Power Devices for Brushless DC Motor Drives
  • Toshiba Electronic Devices & Storage’s Status and Measures in Response to the Earthquakes in Ishikawa Region (Fifth Report)
  • Toshiba Electronic Devices & Storage’s Status and Measures in Response to the Earthquakes in Ishikawa Region (Sixth Report, Final, Update on March 4)
  • Toshiba Adds New Position Estimation Control Technology to Its Motor Control Software Development Kit to Simplify Field Oriented Control of Motors
  • Toshiba Releases Arm® Cortex®-M4 Microcontrollers for Motor Control
  • Toshiba Launches SmartMCD™ Series Gate Driver ICs with Embedded Microcontroller
  • Toshiba Completes New 300-Millimeter Wafer Fabrication Facility for Power Semiconductors
  • Toshiba Succeeds in Reducing On-resistance in SBD embedded SiC MOSFET While Securing Reliability and Short-Circuit Ruggedness
  • Toshiba Develops 48V-to-1V Non-Isolated DC-DC Converter IC
  • Toshiba Launches 2:1 Multiplexer/1:2 Demultiplexer Switches that Support High-Speed Differential Signal Such as PCIe® 5.0 and USB4®
  • Toshiba Launches New Series of eFuse ICs, Electronic Fuses That Can Be Used Repeatedly - Introducing the compact, high-voltage “TCKE9 Series” -
  • Toshiba Develops Technology that Can Mitigate Parasitic Oscillation Between Parallel-Connected Chips in SiC Power Modules with Minimal Gate Resistance that Support High Speed Switching
  • Toshiba Releases Automotive Photorelay with Output Withstand Voltage of 900V
  • Toshiba Is Sampling an Automotive CXPI Responder Interface IC that Contributes to Shorter Software Development Times
  • Toshiba Starts Sample Shipments of Gate Driver IC for Automotive Brushed DC Motors that Will Contribute to Downsizing of Equipment
  • Toshiba Announces CMR 24TB and SMR 28TB Hard Disk Drives
  • Toshiba’s 1200V Additions to its Lineup of Third-Generation SiC Schottky Barrier Diodes Will Contribute to High Efficiency in Industrial Power Equipment
  • Toshiba Releases Automotive Photorelay with Output Withstand Voltage of 900V, Housed in a Small Package
  • Toshiba Starts Sample Shipments of Gate Driver IC for Three-Phase Brushless DC Motors in Diverse Automotive Applications
  • Toshiba Starts Test-Sample Shipments of a Bare Die 1200V SiC MOSFET with Low On-Resistance and High Reliability, for Use in Automotive Traction Inverters
  • Toshiba Expands Lineup of Arm® Cortex®-M4 Based Microcontrollers for Motor Control
  • Toshiba Releases Small Photorelays with High Speed Turn-On Time that Help Shorten Test Time for Semiconductor Testers
  • Toshiba Releases Automotive Standard Digital Isolators Compliant with AEC-Q100
  • Toshiba Celebrates Completion of New Back-End Production Facility for Power Semiconductors
  • Toshiba Releases SiC MOSFET Gate Driver Photocoupler with Enhanced Safety Functions for Industrial Equipment
  • Toshiba Releases Gate Driver IC for Automotive Brushed DC Motors that Will Contribute to Downsizing of Equipment
  • Synology and Toshiba Strengthen Strategic Partnership with MOU
  • 05
  • Toshiba Releases 650V 3rd Generation SiC MOSFETs in DFN8×8 Package
  • 06
  • Toshiba Develops Technology to Reduce Losses in SiC Trench MOSFETs and Semi-Super-Junction Schottky Barrier Diodes
  • Kaga Toshiba and Himeji Semiconductor Introduce Off-site PPA Model
  • Toshiba Releases 2-Channel Automotive Standard Digital Isolators Compliant with AEC-Q100
  • Toshiba Electronic Devices & Storage Corporation Announces a Plan to Change Auditors of June 27, 2025
  • Toshiba Starts Sample Shipments of Second Product in its Smart Motor Control Driver “SmartMCD™” Series
  • Technical Review
  • Design Method to Improve Clamping Capability of Parasitic pn Diodes Utilizing Newly Developed Equivalent Circuit Model of SBD-Embedded SiC MOSFETs
  • Implementation of security features in storage products
  • Cyber security compliance (ISO/SAE 21434) for in-vehicle semiconductor products
  • 3D integration technology with photosensitive mold for fan-out package
  • Analysis of dependence of dVCE/dt on turn-off characteristics with a 1200 V double-gate insulated gate bipolar transistor
  • Implementation of security features in storage products
  • Cybersecurity of automotive semiconductor products
  • Novel Approach to Mitigate Parasitic Oscillation of Power Modules with Parallel Connected SiC-MOSFETs
  • Improving the Short-Circuit Capability of RC-IEGT by Backside Double P-ring Structure
  • Demonstration of Pseudo Independent Driving of Buried Gate in Trench Field Plate MOSFETs
  • Impact of Reverse Current Spreading on Diode Conduction Reliability of SBD-Embedded SiC-MOSFET with Deep p-Shield Structure
  • Paralleling 3.3-kV/800-A rated SiC-MOSFET Modules: An Optimization Method
  • Improved reliability of a 2200 V SiC MOSFET module with an epoxy-encapsulated insulated metal substrate
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