• 英文
  • 半導體
  • 半導體-品質 / 信賴性
  • e-Learning
  • Microcontroller Function Terms
  • ΔΣ AD Converters
  • Serial Interface
  • Seven serial interfaces of Toshiba MCU
  • Flash ROM
  • Control using MCU
  • Servo Control
  • Vector Engine and Vector control
  • Ultrasonic Motor Control Technology: High Resolution Control by MCU
  • USB interface
  • Inverter control
  • 離散半導體元件的基礎知識
  • Chapter I : Basis of Semiconductors : p-type Semiconductor
  • Chapter I : Basis of Semiconductors : What is a Compound Semiconductor?
  • pn Junction
  • Chapter I : Basis of Semiconductors : Types of Semiconductor Devices
  • Chapter I : Basis of Semiconductors : What is a Semiconductor?
  • Chapter I : Basis of Semiconductors : Semiconductor Materials
  • Chapter I : Basis of Semiconductors : n-type Semiconductor
  • Chapter II : Diodes : Types of Diodes
  • Chapter II : Diodes : Characteristics Application of Various Diodes
  • Chapter II : Diodes : Schottky Barrier Diodes (SBDs)
  • Chapter II : Diodes : Functions of Rectifier Diodes
  • Chapter II : Diodes : Reverse Recovery Characteristic of Schottky Barrier Diodes (SBDs)
  • Chapter II : Diodes : TVS diode (ESD protection diode)
  • Chapter II : Diodes : Difference Depending on Metal of Schottky Barrier Diodes (SBDs)
  • Chapter II : Diodes : Forward Characteristic of Rectifier Diodes (IF-VF Characteristic)
  • Chapter II : Diodes : Difference between TVS Diodes and Zener Diodes (2)
  • Chapter II : Diodes : Variable-capacitance Diodes (Varicap Diodes)
  • Chapter II : Diodes : Difference between TVS Diodes and Zener Diodes (1)
  • Chapter II : Diodes : FRDs (Fast Recovery Diodes)
  • Chapter II : Diodes : Voltage Regulator Diodes (Zener Diodes)
  • Chapter III : Transistors : Types of Transistors
  • Chapter III : Transistors : Performance of MOSFETs: Characteristic of Capacitance
  • Chapter III : Transistors : Performance of MOSFETs: Safe Operating Area(or Area of Safe Operation)
  • Chapter III : Transistors : Bipolar Transistors (BJTs)
  • Chapter III : Transistors : Bias Resistor Built-in Transistors (BRTs)
  • Chapter III : Transistors : Junction Field-Effect Transistors (JFETs)
  • Chapter III : Transistors : Application of IGBTs
  • Chapter III : Transistors : Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)
  • Chapter III : Transistors : Differences between BJT and MOSFET
  • Chapter III : Transistors : Structure and Operation of MOSFET
  • Chapter III : Transistors : MOSFET Performance Improvement: Decision Factors of RDS(ON)
  • Chapter III : Transistors : MOSFET Performance Improvement: Approach to Low RDS(ON)
  • Chapter III : Transistors : MOSFET Performance Improvement: Super-Junction MOSFETs (SJ-MOS)
  • Chapter III : Transistors : Summary of MOSFET Features by Structure
  • Chapter III : Transistors : Performance of MOSFETs: Drain Current and Power Dissipation
  • Chapter III : Transistors : Performance of MOSFETs: Avalanche Capability
  • Chapter III : Transistors : Comparison of Forward Characteristics of IGBTs and MOSFETs
  • Chapter III : Transistors : Insulated-Gate Bipolar Transistors (IGBTs)
  • Chapter III : Transistors : Operation of Insulated-Gate Bipolar Transistors (IGBTs)
  • Chapter III : Transistors : Performance Improvement of IGBTs:Evolution of Vertical Design
  • Chapter III : Transistors : What are RC-IGBTs and IEGTs?
  • Chapter III : Transistors : Comparison of Transistors by Structure
  • Chapter III : Transistors : Datasheets of MOSFET: Maximum Ratings
  • Chapter III : Transistors : Datasheets of MOSFET: Electrical Characteristics
  • Chapter III : Transistors : Datasheets of MOSFET: Capacitance and Switching Characteristics
  • Chapter III : Transistors : Datasheets of MOSFET: Body Diode
  • Chapter IV : Local Power Supply ICs : Operation of Switching Regulators
  • Chapter IV : Local Power Supply ICs : Why POL Supply ICs Are Wanted?
  • Chapter IV : Local Power Supply ICs : Functions of LDO
  • Chapter IV : Local Power Supply ICs : Types of Local Power Supply ICs
  • Chapter IV : Local Power Supply ICs : Load Switch IC
  • Chapter IV : Local Power Supply ICs : Functions of Load Switch IC
  • Chapter IV : Local Power Supply ICs : Power Management IC
  • Chapter IV : Local Power Supply ICs : Operation of Linear Regulators
  • Chapter IV : Local Power Supply ICs : Example of Power Line Structure in a System
  • Chapter V : Optical Semiconductors : Types of Optical Semiconductors
  • Chapter V : Optical Semiconductors : Characteristics of Photocouplers(Current Transfer Ratio: CTR)
  • Chapter V : Optical Semiconductors : Principal Characteristics of Photocouplers(Trigger LED Current)
  • Chapter V : Optical Semiconductors :Aging Variation Data of Photocouplers
  • Chapter V : Optical Semiconductors : How to Use a Photocoupler
  • Chapter V : Optical Semiconductors : Types of Photocouplers
  • Chapter V : Optical Semiconductors : Types of Photocouplers (Internal Structure)
  • Chapter V : Optical Semiconductors : How to Use a Photocoupler “Output-Side Resistor”
  • Chapter V : Optical Semiconductors : Types of Photocouplers (Packages)
  • Chapter V : Optical Semiconductors : The wavelength range of LEDs
  • Chapter V : Optical Semiconductors : Safety Standards of Photocouplers
  • Chapter V : Optical Semiconductors : How to Use a Photocoupler “Input Current”
  • Chapter V : Optical Semiconductors : How to Use a Photocoupler Check
  • Chapter V : Optical Semiconductors : How to Use a Photocoupler “Output Current”
  • Chapter V : Optical Semiconductors : What Is a Photocoupler?
  • Chapter V : Optical Semiconductors : Why Are Photocouplers Necessary?
  • Chapter V : Optical Semiconductors : Light-Emitting Principal of LEDs
  • 微控制器基礎知識
  • Digital Value
  • Digital Value: Binary and Decimal
  • Digital Value: Units of Binary Data
  • Digital Value: Notation Method of Data
  • Digital Value: Conversion Method of the Data
  • Logic Circuit
  • Logic Circuit: AND Circuit
  • Logic Circuit: OR Circuit
  • Logic Circuit: NOT Circuit
  • Logic Circuit: Exclusive OR (XOR) Circuit
  • Logic Circuit: 3 State Buffer (1)
  • Logic Circuit: 3 State Buffer (2)
  • Logic Circuit: Application Example of Logic Circuits
  • Logic Circuit: RS flip-flop Circuit
  • History of Microcontrollers
  • History of Microcontrollers: Large Scale Integrated Circuits and Microcontrollers
  • 5 Elements of Microcontrollers
  • CPU (Calculation, Control)
  • Memory (Storage)
  • Memory Type (RAM & ROM)
  • I/O (Input, Output)
  • Bus Line
  • Bus Line Type
  • The Role of Software
  • Execution of Software
  • Programming Language
  • Programming Language: Machine Language
  • Programming Language: Assembly Language
  • Programming Language: C Language
  • Overall Configuration of the CPU
  • Overall Configuration of the CPU: CPU Core (1)
  • Overall Configuration of the CPU: CPU Core (2)
  • Overall Configuration of the CPU: Program Counter
  • Overall Configuration of the CPU: General-purpose Register
  • Overall Configuration of the CPU: PSW (Flag)
  • Overall Configuration of the CPU: Stack and Stack Pointer
  • Interrupt Processing
  • Interrupt Processing: Interrupt Type
  • Interrupt Processing: Maskable Interrupt
  • Interrupt Processing: Non Maskable Interrupt
  • System Development Procedure
  • System Development Procedure: Software Development
  • System Development Procedure: Test that Combines the Hardware and Software
  • System Development Procedure: Emulator
  • 步進馬達
  • Motor Applications
  • What is a Stepping Motor?
  • Function in Printers
  • Function in Digital Cameras
  • Function in Air Conditioners
  • Function in Slot Machines
  • Function in Astronomical Telescopes
  • Open-Loop Control
  • Pros and Cons
  • Classification by Output Power
  • Classification by Power Supply
  • Unipolar Type and Bipolar Type
  • Classification by Stator
  • Classification by Rotor Types
  • Operation Image
  • Step Operation
  • Step Angle
  • Magnetic Pole of the Stator
  • Motor Current and Rotor Rotation
  • Excitation Mode
  • Excitation Mode: Full Step
  • Excitation Mode: Half Step
  • Excitation Mode: Micro Step
  • Summary of Excitation Modes
  • 2-Phase 4-Pole Motor
  • Two Input Types
  • CLOCK Input Type
  • PHASE Input Type
  • Brushless Motor
  • History of Brushless Motors
  • Brushed DC Motors and Brushless Motors
  • Classification of Brushless Motors
  • What is a Brushless Motor (1)
  • What is a Brushless Motor (2)
  • Application Examples of Brushless Motors
  • Driving Principle of a Motor (1)
  • Driving Principle of a Motor (2)
  • Brushed DC Motors and Brushless Motors
  • Sequence of a Brushed DC Motor
  • Sequence of a Brushless Motor
  • Relation Between a Pole, a Phase, and a Slot
  • Technical Explanation of a Brushless Motor
  • What is PWM?
  • What is an Inverter?
  • What is a Driver?
  • Position Detection by a Hall Sensor
  • Position Detection by an Induced Voltage
  • What is a Square-Wave Drive?
  • What is a Sine-Wave Drive?
  • Configuration of Square-Wave Drive
  • To Start with Square-Wave Drive
  • To Rotate by Square-Wave Drive
  • Configuration of Sine-Wave Drive
  • To Start with Sine-Wave Drive
  • To Rotate by Sine-Wave Drive
  • To Change Speed
  • Speed ​​Sequence
  • TX03系列微控制器
  • Lineup
  • Features of the TX03 Series.
  • Hardware Configuration
  • NVIC (Nested Vectored Interrupt Controller)
  • Main Core
  • Register Configuration
  • The Role of the Register
  • PC, LR
  • Stack Pointer
  • PUSH/POP to the Stack Pointer
  • Special Register
  • Operation Mode and Stack Pointer (1)
  • Operation Mode and Stack Pointer (2)
  • Exceptions (Reset, Interrupt, Fault, System Call)
  • The Role of NVIC
  • Tail Chain Control by NVIC
  • Memory Map
  • Memory Map for Arm® Cortex®-M3 Specifications
  • Memory Map of TMPM330: Example of TX03 Series
  • Vector Table (1)
  • Vector Table (2)
  • Bit Band Area and Bit Band Alias Area (1)
  • Bit Band Area and Bit Band Alias Area (2)
  • Memory Map (Bit Band Area and Bit Band Alias Area) 1
  • Memory Map (Bit Band Area and Bit Band Alias Area) 2
  • Memory Map (Bit Band Area and Bit Band Alias Area) 3
  • Memory Map (Bit Band Area and Bit Band Alias Area) 4
  • Memory Map (Bit Band Area and Bit Band Alias Area) 5
  • Memory Map (Bit Band Area and Bit Band Alias Area) 6
  • Memory Map (Bit Band Area and Bit Band Alias Area) 7
  • Memory Map (Bit Band Area and Bit Band Alias Area) 8
  • Memory Map (Bit Band Area and Bit Band Alias Area) 9
  • Memory Map (Bit Band Area and Bit Band Alias Area) 10
  • Low Power Consumption Technology
  • Low Power Consumption Control Block
  • Low Power Consumption Mode (1)
  • Low Power Consumption Mode (2)
  • Peripheral Circuits by Group of TX3
  • Peripheral Circuits of the M320 Group
  • M320 Group Application Example
  • Peripheral Circuits of the M330 Group
  • M330 Group Application Example (1)
  • M330 Group Application Example (2)
  • Peripheral Circuits of the M340 Group
  • M340 Group Application Example
  • Peripheral Circuits of the M360 Group
  • M360 Group Application Example
  • Peripheral Circuits of the M390 Group
  • M390 Group Application Example
  • Peripheral Circuits of the M370 Group
  • M370 Group Application Example
  • Overview of Vector Engine (VE)
  • Peripheral Circuits of the M380 Group
  • M380 Group Application Example (1)
  • M380 Group Application Example (2)
  • CMOS邏輯IC基礎知識
  • What is a Logic IC?
  • What is a Standard Logic IC?
  • Types of Standard Logic ICs
  • Equipment in Which CMOS Logic ICs are Used
  • Reasons Why CMOS Logic ICs are Used
  • Classification of CMOS Logic ICs and Overview of Each Series
  • What is a CMOS Logic IC?
  • Basic CMOS Logic ICs
  • Basic Operations of CMOS Logic ICs
  • Basic Configuration of CMOS Logic ICs
  • Basic CMOS Logic ICs
  • Combinational Logic: Inverters and Buffers
  • Combinational Logic: Bidirectional Bus Buffers
  • Combinational Logic: Schmitt-Trigger Devices
  • Combinational Logic: Decoders
  • Combinational Logic: Multiplexers
  • Combinational Logic: Analog Multiplexer/Demultiplexers
  • Combinational Logic: Analog Switches
  • Sequential Logic: Latches
  • Sequential Logic: Flip-Flops
  • Sequential Logic: Counters
  • Sequential Logic: Shift Registers
  • Reading Datasheets: Absolute Maximum Ratings and Operating Ranges
  • Reading Datasheets: DC Electrical Characteristics
  • Reading Datasheets: Input Voltages (V(IH) and V(IL))
  • Reading Datasheets: Output Currents (I(OH) and I(OL))
  • Reading Datasheets: Input Current (I(IN))
  • Reading Datasheets: Quiescent Supply Current (I(CC))
  • Reading Datasheets: AC Electrical Characteristics
  • Reading Datasheets: Propagation Delay Times (t(pLH) and t(pHL))
  • Reading Datasheets: Power Dissipation Capacitance (C(PD))
  • Reading Datasheets: Input-Tolerant Function
  • Reading Datasheets: Output-Tolerant Function
  • Reading Datasheets: Power-Down Protection
  • Reading Datasheets
  • CMOS邏輯IC的使用注意事項
  • Handling of Unused Input Pins
  • Input Rise and Fall Time Specifications
  • Multiple Outputs from a General-Purpose CMOS Logic IC Come Into Conflict (Short-Circuiting)
  • Connecting a Load Capacitance to a CMOS Output Pin
  • Calculating the Operating Supply Current and Power Dissipation
  • Level Shifting Using an Input-Tolerant Function
  • Example of Application of the Power-Down Protection Function (Partial Power-Down)
  • Input-Tolerant and Output Power-Down Protection Functions Available with Each Series
  • Types of Noise to be Noted
  • Countermeasures for Reducing Switching Noise
  • Countermeasures for Signal Reflection
  • Countermeasures for Crosstalk
  • Countermeasures for Hazards
  • Countermeasures for Metastability
  • Countermeasures for Latch-Up
  • Countermeasures for ESD Protection
  • eFuse IC基礎知識
  • What is the semi-conductor fuse eFuse IC?
  • Advantages of Semiconductor-fuse eFuse IC (1)
  • Advantages of Semiconductor-fuse eFuse IC (2)
  • Advantages of Semiconductor-fuse eFuse IC (3)
  • Comparison of eFuse IC performance with conventional fuses
  • Examples of applications where semiconductor fuses (eFuse ICs) are used
  • Overcurrent protection function (OCP)
  • Short circuit protection function
  • Overvoltage protection function (overvoltage clamp)
  • Slew rate control (Suppressing rush current)
  • 運算放大器基礎知識
  • 1. What is an op-amp?
  • 1.1. Characteristics of op-amps (What is the ideal op-amp?)
  • 1.2. Internal operation of an op-amp
  • 2. Using an op-amp
  • 2.1. Feedback (positive and negative feedback)
  • 2.2. Open-loop and closed-loop gains (Increasing the bandwidth of an amplifier)
  • 2.3. Oscillation
  • 2.4. Basic op-amp applications
  • 2.5. Virtual short (virtual ground)
  • 3. Electrical characteristics
  • 3.2. Common-mode input voltage range (CMV(IN)) and common-mode input signal rejection ratio (CMRR)
  • 3.3. Internal noise of an op-amp
  • 3.4. Noise gain and signal gain
  • TVS二極體（ESD保護二極體）的基礎知識
  • 1-1 Reverse breakdown voltage
  • 1-2 Using different types of protection diodes (ESD protection diodes and Zener diodes for overvoltage protection)
  • 1-3 Differences between protection diodes (ESD protection diodes and surge protection Zener diodes) and diodes for constant-voltage regulation
  • 1 What is a TVS diode (ESD protection diode)?
  • 2 Basic operations of TVS diodes (ESD protection diodes)
  • 2-1 Equivalent circuits and benefits
  • 3 Key electrical characteristics of TVS diodes (ESD protection diodes)
  • 3-1 Key characteristics for normal operation (in the absence of an ESD event)(1)
  • 3-1 Key characteristics for normal operation (in the absence of an ESD event)(2)
  • 3-1 Key characteristics for normal operation (in the absence of an ESD event)(3)
  • 3-2 Key characteristics for protection against ESD events(1)
  • 3-2 Key characteristics for protection against ESD events(2)
  • 3-2 Key characteristics for protection against ESD events(3)
  • 4 Selection guidelines for TVS diodes (ESD protection diodes)
  • 5 Layout considerations for TVS diodes (ESD protection diodes)
  • 6 Absolute maximum ratings of TVS diodes (ESD protection diodes)
  • Supplemental information: IEC61000-4-2 and IEC 61000-4-5
  • 7 Electrical characteristics of TVS diodes (ESD protection diodes)
  • 負載開關IC基礎知識
  • Chapter1 Introduction to Load Switch ICs
  • 1-2. Benefits of using load switch ICs
  • 1-1. What is a load switch IC?
  • Chapter2 Convenient functions load switch ICs
  • 2-1. Useful functions available with load switch ICs
  • 2-2. Operation of overcurrent protection
  • 2-3. Operation of thermal shutdown
  • 2-4. Inrush current reducing
  • 2-5. Auto discharge
  • 2-6. Undervoltage lockout (UVLO)
  • 2-7. Reverse-current protection
  • Chapter3 Glossary of terms used in the datasheets for load switch ICs
  • 3-1. Glossary of terms used in the datasheets for load switch ICs
  • Chapter4 Power loss calculation for load switch IC
  • 4-1. Calculating the power dissipation of a load switch IC and heat dissipation
  • Basics of Low-Dropout (LDO) Regulators
  • 1-1. Types of voltage regulator ICs
  • 1-3. What is an LDO regulator?
  • 1-2. Advantages and disadvantages of linear regulators and switching regulators
  • 1-4. Need of LDO regulators for electronic systems
  • 1-5. What is a linear regulator?
  • 1-6. Operations of linear and switching regulators
  • 1-7. Principle of operation of series regulators
  • 1-8. Circuit configuration of a series regulator
  • 1-9. Differences between a three-terminal voltage regulator and an LDO regulator
  • 2-1. Useful functions available with LDO regulators
  • 2-2. Overcurrent protection operation of LDO regulators
  • 2-3. Thermal shutdown (TSD) operation of LDO regulators
  • 2-4. Inrush current reduction function of LDO regulators
  • 2-5. Auto discharge function of LDO regulators
  • 2-6. Undervoltage lockout (UVLO) function of LDO regulators
  • 3-1. Glossary of terms used in the datasheets for LDO regulators
  • 4-1. Efficiency of LDO regulators
  • 4-2. Calculating the power dissipation and junction temperature of an LDO regulator
  • 5-1. Usage considerations for LDO regulators
  • Basics of Schottky Barrier Diodes
  • 1. Conductors, semiconductors, and insulators
  • 1-1. Energy band diagram
  • 1-2. Characteristics of an intrinsic silicon semiconductor
  • 1-3. pn junction
  • 1-3-1. Forward biasing
  • 1-3-2. Reverse biasing
  • 3-1. Classification of diodes
  • 3-2. Comparison between SBDs and pn junction diodes
  • 3-3. Applications of SBDs
  • 3-4. Forward voltage
  • 3-5. Reverse recovery time
  • 3-6. Maximum rated reverse voltage (VR)
  • 3-7. Leakage current
  • 2. Metal-semiconductor junction
  • 2-1. Schottky contact (Schottky junction) Φm > Φn
  • 2-2. Ohmic contact (Ohmic junction) Φm < Φn
  • 2-3. Conductivity modulation
  • Basic of Thermoflagger™
  • The need for overheating (temperature) monitoring
  • What is Thermoflagger™ ?
  • Basic operations of Thermoflagger™
  • Using Thermoflagger™
  • Feature 1: Simplifies circuit design for overtemperature detection
  • Feature 2: Low-cost solution for monitoring multiple locations for overtemperature conditions
  • Feature 3: Supports failsafe design (1)
  • Feature 3: Supports failsafe design (2)
  • Application example for Thermoflagger™
  • Application of Thermoflagger™ (reference design)
  • 目錄
  • 採購注意事項
  • Frequently Asked Questions (FAQs)
  • Diodes
  • What are the items for the absolute maximum rating in technical datasheet of the diode?
  • Do the technical datasheets of diodes specify thermal resistance from the junction to the ambient?
  • How does heat change the characteristics of a diode? (Temperature Characteristic)
  • What is the temperature coefficient of the Zener diode (voltage regulator diode, constant voltage diode)?
  • What are the precautions when using switching diodes?
  • What electrical characteristics are specified in the diode technical datasheets?
  • Do SBDs have reverse recovery characteristic (trr)?
  • For what purposes are Zener diodes used?
  • How to calculate thermal resistance of diodes?
  • How to distinguish the anode and cathode terminals of a diode?
  • How can I use a Zener diode to create a relatively constant voltage that is not affected significantly by changes in temperature and supply voltage?
  • How do diodes work?
  • In what kinds of applications are fast recovery diodes (FRDs) used?
  • In what types of circuits are Zener diodes (voltage regulator diodes, constant-voltage diodes) used?
  • Is it OK to connect multiple diodes with the same part number in parallel?
  • Can Zener diodes be used in parallel connection?
  • Is it OK to connect multiple Zener diodes in series?
  • Is it possible to use Zener diodes in the same manner as typical pn junction diodes?
  • What is a diode?
  • What is a Schottky barrier diode (SBD)?
  • How do Zener diodes operation?
  • What are the key characteristics of a varicap diode?
  • What happens if trr is large?
  • What is a fast recovery diode (FRD)?
  • What is an HED?
  • What is a switching diode?
  • What is a variable-capacitance (varicap) diode?
  • What is a Zener diode (voltage regulator diode, constant-voltage diode)?
  • What is the difference between rectifier diodes and typical switching diodes?
  • What is the forward voltage (VF) of Schottky barrier diodes (SBDs)?
  • What is the dynamic impedance of a Zener diode (voltage regulator diode, constant voltage diode)?
  • How much frequency are used to fast recovery diodes?
  • What is diode reverse recovery time (trr)?
  • What is trr level of FRD?
  • What are the characteristics of Schottky barrier diodes (SBDs)?
  • What types of diodes does Toshiba provide?
  • Does the diode technical documentation specify the operating temperature range?
  • 線性 Ics
  • How does a boost converter work?
  • How does a buck converter work?
  • In what parts are power supply ICs used?
  • What kinds of local power supply ICs exist?
  • What kinds of switching-type local power supply ICs (switching regulators) exist?
  • 隔離器／固態繼電器
  • What is a photocoupler?
  • Why is a photocoupler necessary?
  • What types of photocouplers are available?
  • What is the internal structure of a photocoupler?
  • How many volts can be applied to the input side LED?
  • Is it possible to use a photocoupler in such a way that for items such as the LED current, output current, and output voltage, the value specified for the absolute maximum rating is exceeded for a short time?
  • What are the parameters specific to photocoupler and photorelay optical isolation devices, transfer ratio (CTR), trigger LED current, and threshold input current?
  • How are the current transfer ratio (CTR), trigger LED current, and threshold input current measured?
  • For a photocoupler and photorelay incorporating a LED device, in designing equipment, which should be considered: LED life or photodetector life?
  • A photocoupler is an isolation device. What is dielectric strength, which indicates its insulation capability?
  • What is the difference between a photocoupler and a photorelay?
  • What are the safety standards required for photocouplers?
  • What are required by safety standards applicable to photocouplers? How are they specified in products?
  • How can I find safety standard authentication information about photocouplers?
  • What is the current transfer ratio?
  • What is the CTR classification by rank?
  • Why are there two current transfer ratios: CTR and CTR (Saturation)?
  • What is the difference between a dark current and OFF-state collector current?
  • Why is VECO very low (0.3V) for Darlington transistors such as TLP187 and TLP387? What precautions should be taken when using such transistors?
  • In designing a circuit using a transistor coupler, how should the current transfer ratio be reflected?
  • How should a circuit driving the LED of a transistor coupler be selected?
  • In a circuit using a transistor coupler, how should load resistance be selected?
  • How many volts are minimally required for transistor couplers to operate?
  • How many milliamps are minimally required for transistor couplers to operate?
  • Up to what frequency can transistor couplers transmit signals?
  • For a transistor coupler with the base terminal, if not using the base terminal, is it OK to keep the base terminal open and do nothing?
  • For IC couplers, there is a requirement related to common-mode transient immunity. However, for transistor couplers, such a requirement does not exist. Why?
  • What is the threshold input current?
  • In designing a circuit using an IC coupler, how should the threshold input current be reflected?
  • How should a circuit driving the LED at the input side of an IC coupler be selected?
  • In a circuit using a high-speed IC coupler, how should output pull-up resistance be selected?
  • For example, for 1Mbps-type IC couplers such as TLP109 and TLP759 to operate, how many volts are minimally required?
  • For IC couplers, some products are defined with a threshold input current, and others are defined with a current transfer ratio. What is the difference between them?
  • Is a bypass capacitor required between the VCC and GND terminals?
  • How should a frequency for signals that can be transmitted by a high-speed IC coupler be estimated?
  • What is the UVLO function?
  • Is there any problem with waveforms with input signals rising or falling gently?
  • What is the difference between the open collector output type and the totempole output type? Also, what precautions should be taken for use?
  • What is the voltage range in which IC couplers can operate?
  • What is common-mode transient immunity? Why is this required for IC couplers?
  • How can I find the resistance values when the photorelay is OFF and when it is ON?
  • Up to what level of voltage can be used at the switch section of a photorelay?
  • How much input current should be passed for switch operation?
  • Up to what level of current can be used at the switch section of a photorelay? Also, for a pulsed current or AC current, what happens?
  • For signals to be switched, up to what frequency can be used?
  • How long does it take from when an input signal enters until the switch changes?
  • Can photorelays be used by series connections or parallel connections? If yes, what points require attention?
  • What is the CR product of the photorelay?
  • Can photorelays be replaced with and used in the same way as mechanical relays? What is the difference, if any?
  • What are Form A contacts and Form B contacts in a photorelay? Also, what are A, B, and C connections? What is the difference?
  • For what purposes are triac couplers used?
  • What precautions should be taken when replacing mechanical relays with triac couplers?
  • What are the differences among triac couplers, SSR (solid state relays), and photorelays?
  • What is the difference between zero-cross triac couplers and non-zero-cross triac couplers? How should they be used properly?
  • What precautions should be taken when performing phase control with triac couplers?
  • For triac couplers, how should a VDRM (400V, 600V, 800V) be selected?
  • How much input current should be set for turning the triac ON/OFF?
  • What precautions should be taken when using triac couplers for a long time?
  • How should values be selected for the constants for the snubber circuit connected to the triac?
  • When using a triac coupler to drive the main triac, how should the current limiting resistor RT directly connected to the triac be determined?
  • Can high-frequency signals be switched ON/OFF with a triac coupler?
  • When controlling a load with a triac coupler, can a load be controlled even if using a rectangular wave power supply at the load side instead of a sinusoidal wave (AC) power supply?
  • What are fiber couplers (TOSLINK?) used for?
  • What are the characteristics of optical transmission?
  • What is a fiber coupler (TOSLINK™)?
  • What is optical fiber?
  • What is optical transmission?
  • What types of optical connectors are available?
  • What's the difference in internal construction between a photocoupler and a digital isolator?
  • What are the pros and cons of different types of galvanic isolations?
  • What are the benefits of Toshiba standard digital isolators compared to other companies?
  • How does the Active Miller Clamp (AMC) in power device gate driver couplers work?
  • SiC MOSFETs / MOSFETs / IGBTs / Bipolar Transistors
  • A dotted line in a safe operating area is annotated as “This area is limited by RDS(ON).” What does it mean?
  • Aren't there maximum guaranteed values for capacitance, gate charge (Qg) and switching characteristics?
  • Are there any reasons why forward transfer admittance,
  • What is the maximum rating listed in the MOSFET data sheet?
  • Electrical characteristics of MOSFETs (Static Characteristics IGSS/IDSS/V(BR)DSS/V(BR)DXS)
  • What are the characteristics of MOSFET body diodes?
  • Electrical characteristics of MOSFETs (Charge Characteristic Qg/Qgs1/Qgd/QSW/QOSS)
  • Electrical characteristics of MOSFETs (Dynamic Characteristics Ciss/Crss/Coss)
  • Electrical characteristics of MOSFETs (Dynamic Characteristics　tr/ton/tf/toff)
  • What is RDS(ON), MOSFET drain-source on-resistance?
  • Electrical characteristics of MOSFETs (Static Characteristics Vth)
  • How can I calculate the channel-to-ambient thermal resistance, Rth(ch-a), of a small-signal MOSFET?
  • How does the series gate resistor affect the MOSFET?
  • How do N-channel MOSFETs work?
  • How much gate-source voltage should be applied to drive the MOSFET?
  • What are the parasitic diodes between the drain and source of the MOSFET?
  • Why are two MOSFETs used in series in the Lithium-ion secondary battery protection circuit?
  • Is it acceptable to use a body diode between the drain and source?
  • Is it possible to use the Zener diode between the gate and source for surge absorption?
  • Is a high drive current necessary for power MOSFETs?
  • Is the on-state resistance of a MOSFET dependent on temperature?
  • MOS is sensitive to static electricity. How do you protect MOSFETs from static electricity?
  • How to select a suitable high voltage MOSFET for the application that current flows in the body diode.
  • How to calculate the avalanche energy.
  • Resistors are often inserted between a CPU and MOSFETs. Why are these resistors necessary?
  • The MOSFET does not turn off by a turn-off signal. How do I solve this problem?
  • How are super-junction MOSFETs different from common D-MOS?
  • What are the capacitance characteristics of MOSFET.
  • What are the considerations when using MOSFETs in parallel?
  • What attention should be paid when the reverse voltage is applied between drain and source of power MOSFET?
  • What attention should be paid to rising and falling time of the driving signal for MOSFET?
  • What is derating of the safe operating area (SOA)?
  • What does the dv/dt of the MOSFET mean?
  • What is avalanche in MOSFET? (avalanche capability)
  • What is the avalanche capability specified as part of the absolute maximum ratings?
  • What is the definition of "drain current (DC) (Silicon limit)" listed in the Absolute Maximum Ratings table?
  • What is the definition of power dissipation?
  • What is the meaning of “Logic-Level Gate Drive” for the MOSFET?
  • What should I pay attention to when mounting a MOSFET?
  • When using a MOSFET as a load switch, how do I reduce the inrush current that occurs?
  • Where can I find information about the MOSFET naming conventions?
  • Why do Toshiba's power MOSFETs exhibit larger gate-source leakage current, IGSS, than those of other companies?
  • Why is no operating temperature range specified?
  • Are the drain current ID and IDP (absolute maximum ratings) constant to temperature?
  • What part of the semiconductor is the case temperature measured on?
  • What is Kelvin connection?
  • All Semiconductor Devices
  • How much power is it permissible for the semiconductor device to dissipate?
  • How to approximate power dissipation wave to square wave
  • How to calculate for selecting a heat sink of a semiconductor device (1)
  • How to calculate for selecting a heat sink of a semiconductor device (2)
  • How to calculate the junction temperature of a semiconductor device whose datasheets do not include a “thermal resistance” value
  • How to calculate the junction temperature when the power is dissipated in a semiconductor device
  • How to calculate the transient thermal impedance at short pulse width, which is not included in the datasheet
  • If the packages are the same, are the thermal resistances the same?
  • In a board design, what are the methods for reducing the junction temperature?
  • Is case temperature or lead temperature the same as junction temperature?
  • What are the effects of a double-sided cooling package?
  • What are the effects of thermal via holes?
  • What are the important considerations when using a heat sink?
  • What do the thermal resistance suffixes in Rth(j-c), Rth(j-a) and Rth(ch-c) mean?
  • What is a radiation equivalent circuit?
  • What is thermal resistance?
  • What is transient thermal impedance?
  • When multiple semiconductor devices are arranged on the same board, is it necessary to consider thermal interference?
  • General-Purpose Logic ICs
  • 一般用途IC
  • Are there any special considerations for using RF devices?
  • How can I distinguish between the cathode and anode terminals?
  • What is an RF MMIC (RF cell pack)?
  • What is an RF Schottky barrier diode?
  • What is an RF switching diode?
  • What is a PIN diode?
  • What is a variable-capacitance diode?
  • What is important when selecting a variable-capacitance diode?
  • What is "rs" shown in the Electrical Characteristics table?
  • 一般用途IC
  • Microcontroller
  • Are there any products that allow memory to be connected without using an external address decoder ?
  • What is the meaning of LSB in representation of AD conversion errors ?
  • Does Toshiba provide Flash programming service ?
  • Are there any products with a built-in LCD driver ?
  • How do I connect a microcontroller with 16-bit data bus and a NOR Flash memory with 16-bit data bus ?
  • How do I identify whether a malfunction is caused by hardware or software ?
  • Although operation checks with test tools in the development environment were successful, proper operation cannot be achieved with the actual device.
  • It looks as if the argument is not passed to the function properly.
  • It looks as if the function call returns an unintended value.
  • What is a wide-band-gap semiconductor?
  • What is surge current?
  • What is the temperature characteristic of the SiC-Schottky barrier diode (SBD)?
  • What is thermal runaway * of the SiC Schottky barrier diode (SBD)?
  • Why does the SiC Schottky barrier diode (SBD) have a high withstand voltage?
  • Are power supply decoupling capacitors required?
  • How to calculate current consumption and power consumption?
  • How to set the output current.
  • How many ICs per reel of taping?
  • What wattage resistor should we choose for the EXT terminal？
  • What should be the power supply and input turn-on order/descent?
  • Are there any problems if the SCK waveform is dulled that cascaded LED drivers are used?
  • What is the difference between absolute maximum ratings and operating conditions?
  • What is the definition of Power dissipation?
  • What is a high-side switch?
  • What is a low-side switch?
  • What is a short to ground?
  • What is a short to power?
  • What is the difference between IPD and IPS?
  • What does the diagnostic function available with low-voltage IPDs do?
  • What is the open-load detection function available with low-voltage IPDs?
  • What is active clamping available with low-voltage IPDs?
  • How does a low-voltage IPD sense temperature for thermal shutdown?
  • How does the thermal shutdown of a low-voltage IPD work for device protection?
  • How does the overcurrent protection of a low-voltage IPD work?
  • Are low-voltage IPDs with a high-side and a low-side switch distinguished with part numbers?
  • What is a bias resistor built-in transistor (BRT)?
  • What are the variations in resistance?
  • What is the maximum voltage that can be applied to the base of a bias resistor built-in transistor (BRT)? (How many watts is the allowable power dissipation of the built-in resistors?)
  • How to calculate the allowable power dissipation of a bias resistor built-in transistor (BRT)
  • At what voltages does the bias resistor built-in transistor (BRT) turn on and off?
  • Basic idea of how to calculate the base current and input voltage of a bias resistor built-in transistor (BRT)　
  • About the hFE of a bias resistor built-in transistor (BRT)
  • What types of bias resistor built-in transistors (BRTs) are available?
  • How to select bias resistor built-in transistors (BRTs)
  • How to read the datasheet (electrical characteristics) of a bias resistor built-in transistor (BRT)
  • How does a bias resistor built-in transistor (BRT) operate?
  • If the VCE(sat) of a bias resistor built-in transistor (BRT) does not drop to the design target because of a heavy load, what can I do?
  • What can I do to increase the switching speed of a bias resistor built-in transistor (BRT)?
  • Obtaining necessary voltage when a bias resistor built-in transistor (BRT) is on (i.e., reducing a collector-emitter voltage drop in the “on” state)
  • mosfet_Bipolar-transistors
  • Are the collector and emitter terminals of a bipolar transistor interchangeable?
  • Are there any special considerations for heat dissipation from bipolar transistors?
  • What are the electrical characteristics of bipolar junction transistors (BJTs) ?
  • What is the method for measuring the electrical characteristics of bipolar junction transistors (BJTs) ?
  • How can I calculate the junction-to-ambient thermal resistance, Rth(j-a), of a small-signal transistor?
  • How do npn and pnp transistors operate?
  • Reading individual technical datasheets for bipolar transistors
  • Datasheets and other documents for bipolar transistors contain a safe operating area (SOA) graph. What is it?
  • What is the relationship between transient thermal impedance and safe operating area of bipolar transistors?
  • What are the applications of bipolar transistors (bipolar junction transistors: BJTs) ?
  • What is the relationship between the base current and collector current of a bipolar junction transistor (BJT) ?
  • What types of bipolar transistors (bipolar junction transistors: BJTs) are available?
  • What occurs if reverse voltage exceeding the absolute maximum rated emitter-base voltage is applied to the base terminal of bipolar junction transistors (BJTs) ?
  • A junction FET is widely used for impedance conversion. What is it for?
  • Are there any reasons why junction-to-case (or channel-to-case) thermal resistance is not specified for small-package devices?
  • Are there any special considerations for thermal calculation?
  • What drives transistors: current or voltage?
  • I heard that a junction FET could be used as a constant-current source. How can I create a constant-current source?
  • Is it OK to use a transistor as diodes?
  • Neither Rth(ch-a) nor Rth(j-a) is specified for MOSFETs, IGBTs and bipolar transistors. Why is that?
  • Technical documents for MOSFETs and bipolar transistors contain a safe operating area (SOA) graph. What is it?
  • What is a bias resistor built-in transistor?
  • What is a bipolar transistor?
  • What is a JFET?
  • What is a MOSFET?
  • What is a multi-chip discrete device?
  • What is an IGBT?
  • What kinds of tape packing does Toshiba offer for transistors?
  • What types of transistors are available?
  • Why is no operating temperature range specified?
  • What is a transistor
  • What is an IPD?
  • What is an SOI?
  • How to distinguish high-voltage IPDs for sine-wave and square-wave drive based on part numbers?
  • What are the applications of high-voltage IPDs?
  • How does a high-voltage IPD detect temperature for thermal shutdown?
  • What is the bootstrap circuit in high-voltage IPDs?
  • What is the level-shift driver in high-voltage IPDs?
  • What type of Hall-effect devices is suitable for use with a high-voltage IPD?
  • Does the E-Pad (metal frame) exposed on the surface of a high-side IPD have the same potential as GND?
  • Metals are exposed on the sides of the SSOP30 package of high-voltage IPDs. What voltage potential do they have?
  • Is there a recommended land pattern for high-voltage IPDs?
  • What kind of packages are available for high-voltage IPDs?
  • What kind of control IC can be used in combination with high-voltage IPDs?
  • Is there a way to dissipate heat from high-voltage IPDs?
  • How are local power supply ICs used?
  • What kinds of linear-type local power supply ICs (linear regulators) exist?
  • Do LDO ICs need external parts?
  • About absolute maximum ratings (Understanding datasheet values)
  • About electrical characteristics of LDO (Understanding datasheet)
  • Is it possible to use LDO regulators at low supply voltage? What is the minimum voltage required for their proper operation?
  • How can a low-noise power supply be created using an LDO regulator?
  • What is the resistance of the pulldown resistor connected to the CONTROL pin of the LDO regulator?
  • How does overcurrent protection work in an LDO regulator?
  • When the operating mode of the load-side IC is changed, the output voltage of an LDO regulator drops, causing the IC to malfunction. What can I do to prevent a malfunction?
  • What is the thermal shutdown (TSD) that is available with LDO regulators?
  • Are there any LDO regulators with adjustable output voltage available (requiring external resistors)?
  • What type of capacitor is suitable for use with an LDO regulator?
  • What is the quiescent current of an LDO?
  • Which characteristics in a datasheet should I refer to in order to determine whether a given LDO maintains a regulated output voltage even when input voltage varies?
  • The output voltage of an LDO drops when I increase the output current even though it is operating within the rated conditions. What type of LDO should I choose to avoid such a problem?
  • A small noise is superimposed on the output voltage of an LDO. What can I do to reduce the noise?
  • What voltage is required at the CONTROL terminal to enable an LDO?
  • Why does the LDO output voltage oscillate?
  • How can I quickly bring the output voltage of a circuit with an LDO to zero in order to set a power supply sequence for the load IC?
  • Why is the output of an LDO disabled when its input voltage decreases?
  • How can I prevent the output voltage from overshooting following the application of the control voltage to an LDO?
  • Large inrush current flows when an LDO is enabled. What can I do to prevent this?
  • Is the power-on sequence of the input voltage (VIN) and the control voltage (VCT) of an LDO significant?
  • What is the purpose of the capacitor connected to one of the external resistors for an adjustable-output LDO?
  • Is it OK to reverse-bias an LDO, causing its output voltage to become higher than the input voltage?
  • How can I calculate the junction temperature of an LDO?
  • Is there a low-current LDO with an input voltage greater than 5 V?
  • If you want to step down the supply voltage, select either DCDC converter or LDO regulator?
  • What is an output discharge function of the load switch IC?
  • What is the input-tolerant function?
  • Is it OK to apply the input voltage following the application of an “on” signal to the CONTROL terminal?
  • How can I suppress inrush current with a load switch IC?
  • What is the value of the pull-down resistor connected to the active-High CONTROL terminal of load switch ICs?
  • Does the overvoltage lockout of the load switch IC recover automatically?
  • Does the undervoltage lockout function of the load switch IC provide a hysteresis?
  • What is the FLAG output function of the load switch IC?
  • What is the hold time of a load switch IC?
  • What are the Auto Selection and Manual Selection modes?
  • What is a break-before-make circuit?
  • What is reverse-current blocking using external back-to-back MOSFETs?
  • What is the difference between true reverse-current blocking and reverse-current blocking?
  • How does a load switch IC operate if overcurrent protection is tripped?
  • How can I calculate the power dissipation and junction temperature of a load switch IC?
  • What is a bus switch?
  • How should unused terminals of bus switches and analog switches be handled?
  • What is the difference between CMOS logic IC multiplexers and bus switch multiplexers?
  • Does the bus switch have a tolerant function?
  • How should I select a bus switch?
  • Is there a bus switch that can switch high-speed signals (USB3.0/3.1, PCIe™3.0, etc.)?
  • Are there any restrictions on the power up/down order of the dual power supply bus switch?
  • Can the power of the bus switch is turn off while the signal on?
  • What are the leaks in a dual power bus switch?
  • What is Break Before Make (TBBM)?
  • What is the difference between a bus switch and an analog switch?
  • What do SPST and SPDT in bus switches mean?
  • What are the Switch Characteristics and Timing Characteristics of a bus switch?
  • Are there any concerns when switching high-speed signals using AC coupling capacitors with a bus switch?
  • Are there Mux (multiplexer) / De-Mux (demultiplexer) type bus switches supporting PCIe® Gen 5.0, PCIe®Gen 4.0, Thunderbolt™ 4, USB4®?
  • When a bus switch is used for a differential signal, is it possible to transmit a differential signal whose positive and negative terminals are opposite to the terminal names?
  • When a Mux (multiplexer) /De-Mux (demultiplexer) -type bus switch is used for differential signaling, is the I/O terminal of the bus switch specified for directionality, such as dedicated TX, RX?
  • Is the output status of the sequential circuit such as flip-flops, registers, counters, and one-shot multivibrators determined after the power is turned on?
  • Are there any problems with the input pins of CMOS logic ICs and the bus pins (input/output pins) of bidirectional bus buffers in a floating state?
  • What countermeasures should be taken for signals with a low slew rate (signals with slow input rise and fall times)is input?
  • What is the main reason why a CMOS logic IC is unstable?
  • What are the possible causes when the output voltage of CMOS logic ICs does not rise to the power supply voltage?
  • When a CMOS logic IC is switched, what is the measure for the voltage-waveform (overshoot or undershoot) like the spike that occurs at the output terminal?
  • What are the possible causes of noise in the voltage waveform input to the CMOS logic IC
  • What is the difference between CMOS logic IC 04 (inverter) and U04 (unbuffered inverter)?
  • What are the differences among the general-purpose logic ICs?
  • What are the differences between "Absolute Maximum Ratings" and "Operating Ranges" of the general purpose logic ICs?
  • What is the tolerant function of the general-purpose logic ICs?
  • In what sequence should I turn on and off the power and input signals of a general purpose logic IC?
  • Is a decoupling capacitor required for the supply of a general purpose logic IC?
  • Is it possible to leave the unused inputs of the general purpose logic ICs open?
  • What is bushold of the general-purpose logic ICs?
  • How should unused output pins of the general-purpose logic ICs be handled?
  • Is there a specification for the input-signal rise time and fall time of the general-purpose logic ICs?
  • Are there any regulations for the capacitance of the capacitor attached to the output terminal of a general-purpose logic IC?
  • Is it possible to short-circuit the outputs of multiple general-purpose logic ICs?
  • Is it possible to configure a wired OR circuit by connecting output terminals in general-purpose logic ICs?
  • How can I find the maximum operating frequency of a general-purpose logic IC?
  • How many amperes is the output current of a general-purpose logic IC able to drive?
  • What is fanout of a general-purpose logic IC?
  • How can the power dissipation of a general-purpose logic IC be calculated?
  • What kind of faults could occur if static electricity is discharged (ESD) into a general-purpose logic IC?
  • What types of voltage level translation ICs (level shifters) are available?
  • In order to achieve a step-down (5 V → 3.3 V) and step-up (3.3 V → 5 V) level shift (voltage conversion), how should this be achieved?
  • How can I achieve level shifting from 2.5 V to 1.8 V and vice versa?
  • Are there level shifters (voltage translation IC) compatible with serial communication standards (UART, I2C)?
  • What is the difference between the bus switch type and the buffer type of the voltage-level transformation IC (level shifter)?
  • In what order should the voltage level translation IC (level shifter) of the dual power supply type be powered up and the signals input?
  • Do bidirectional bus buffers have any constraints on the timing of the direction (DIR), bus, and other signals?
  • Is it necessary to pull up the input/output pins of dual power supply bus switch?
  • How can I calculate the maximum operating frequency of a level shifter (voltage translation logic IC)?
  • mosfet_igbt
  • What is an IGBT?
  • What is the difference between MOSFETs and IGBTs?
  • For what applications should MOSFETs and IGBTs be used?
  • What is the principle of operation of the IGBT?
  • In what structures are IGBTs available?
  • What is a reverse-conducting IGBT (RC-IGBT)?
  • What is conductivity modulation?
  • What is a safe operating area?
  • What is the definition of IGBT power dissipation?
  • What is the tail current of an IGBT?
  • Please give some application examples for IGBTs.
  • Please explain hard switching and soft switching using IGBTs.
  • Please explain the operation of voltage-resonant soft switching of an IGBT.
  • Please explain the operation of current-resonant soft switching of the IGBT.
  • How can I provide protection against the surge voltage generated by the turn-off of an IGBT?
  • Is it possible to connect multiple IGBTs in parallel? If so, is there anything to note about parallel connection?
  • At what voltage should the IGBT gate be driven?
  • Besides silicon, what other types of semiconductors exist?
  • Do semiconductor devices tolerate the rated absolute maximum conditions if such conditions exist only instantaneously?
  • Generally speaking, what does “semiconductor” mean?
  • What is a compound semiconductor?
  • What happens if a P-type semiconductor contacts an N-type?
  • What is an N-type semiconductor?
  • What is a P-type semiconductor?
  • Where can I find information on tape specifications and packing quantities per reel?
  • What are open-loop and closed-loop gains of an op-amp?
  • For what applications are op-amps used?
  • Why is feedback used in op-amps?
  • What is an op-amp?
  • What types of amplifier circuits can be configured using an op-amp?
  • What types of op-amps are available?
  • What is the maximum frequency at which an op-amp can be used?
  • What is the purpose of using a differential amplifier such as an op amp? (Common-mode rejection ratio: CMRR)
  • Characteristics of op-amps (What is the ideal op-amp?)
  • What is the virtual short-circuit (virtual ground) of an op-amp?
  • What is the input offset voltage of an op-amp?
  • Is it necessary to connect bypass capacitors to the power supply terminal of an op-amp?
  • Is there any way to amplify a signal with a voltage close to the power supply level?
  • What types of noise affect an op-amp?
  • Are there any considerations for using an op-amp at low voltage?
  • What is the common-mode input voltage of an op-amp?
  • What does rail-to-rail mean (Rail-to-Rail Op amp) ?
  • How can I provide hysteresis (schmitt trigger) for a comparator?
  • Why are voltage followers prone to oscillation?
  • diode_tvs-diodes
  • What are TVS diodes (ESD protection diodes)?
  • Where are TVS diodes (ESD protection diodes) used?
  • Why are TVS diodes (ESD protection diodes) needed?
  • How do TVS diodes (ESD protection diodes) work?
  • What should I consider when selecting TVS diodes (ESD protection diodes) for high-speed signal lines?
  • How should I select TVS diodes (ESD protection diodes) according to the voltage level of a signal line to be protected?
  • What should I pay attention to when TVS diodes (ESD protection diodes) do not work properly?
  • Is it necessary to use bidirectional TVS diodes (ESD protection diodes) to protect against both positive and negative ESD events?
  • Board design considerations for TVS diodes (ESD protection diodes)
  • Could ESD events destroy TVS diodes (ESD protection diodes)? (What is their ESD tolerance level?)
  • How to select TVS diodes (ESD protection diodes)
  • What is a TLP test?
  • ESD Protection for Wi-Fi® Antennas and Other RF Applications
  • The quality of an RF signal should not be degraded when there is no ESD event
  • The device under protection (DUP) should not be degraded or destroyed in the event of an ESD strike
  • Considerations for board design
  • What is electrostatic discharge (ESD)?
  • What is Electrostatic discharge (ESD) testing？
  • What is an ESD protection diode？
  • How do ESD protection diodes operate？
  • What are the typical electrical characteristics of ESD protection diodes?
  • Are there board design considerations for adding ESD protection diodes？
  • How do I choose an ESD protection diode?
  • Even ESD protection diodes fail to protect the DUP. What is the cause of its destruction?
  • What is a surge?
  • What is IEC61000-4-5?
  • What is the difference between ESD protection diode and varistor?
  • 馬達驅動 ICs
  • What is the meaning of alphanumeric characters at the end of the product name?
  • Please tell me how to calculate the current consumption and power consumption of the meter driver.
  • What are the differences between the absolute maximum ratings and the recommended operating conditions?
  • Please explain the concept of permissible loss for motor drivers.
  • Is it OK to connect capacitors to the output lines of a motor driver IC?
  • Is a decoupling capacitor required on the power supply pins of the IC?
  • Is it okay to make deliberate use of body diodes of MOSFETs?
  • MOS is sensitive to static electricity. How do you protect MOSFETs from static electricity?
  • How will it affect the device when static electricity is applied to the logic pins? And how to deal with the issue?
  • What are the taping specifications and how many ICs per reel?
  • Are there any land pattern preferences or recommendations?
  • How can i purchase samples and evaluation boards?
  • Is there anything to keep in mind when using a sensorless BLDC motor?
  • What are the benefits of lead angle control in brushless motors?
  • What causes motor failure and sine-wave distortion?
  • What is the maximum rotation speed that a sine wave drive motor driver IC can support?
  • What does the symbol at the end of the product name mean?
  • How to distinguish RoHS compliant transistor array products?
  • Is Halogen-free available?
  • What is eFuse IC (electronic fusing)?
  • What are the advantages of using eFuse ICs (electronic fuses) over glass fuses and PTC thermistors (polyswitches, polyfuses)?
  • What applications are eFuse IC (electronic fuses) used for?
  • Can eFuse IC (electronic fusing) be used to protect USB VBUS from short circuits and IEC62368 Qualification?
  • What are the differences between eFuse IC (electronic fuses) and load switch ICs?
  • What functions are built into eFuse IC (electronic fusing)?
  • When a spike-voltage is applied to the input or output terminals of eFuse IC (electronic fuse),How do I take measures?
  • How do I use eFuse IC (electronic fuses) and load switch ICs separately?
  • How does overcurrent protection of eFuse IC (electronic fuses) work?
  • How does short-circuit protection of eFuse IC (electronic fuses) work?
  • What is the difference between the overcurrent protection and the short-circuit protection of eFuse IC?
  • How does thermal shutdown(TSD) of eFuse IC (electronic fuses) work?
  • How does overvoltage protection on eFuse IC (electronic fuses) work?
  • What is the slew rate control function of eFuse IC (electronic fuses) intended to do? And how does it works?
  • What is the under voltage lockout (UVLO) function of eFuse IC (electronic fuses) intended to do? And how does it works?
  • Can eFuse IC (electronic fuse) be used for hot-swap (hot-line insertion/extraction)?
  • Does the eFuse IC (electronic fuse) have reverse current blocking(RCB) function?
  • 電源管理IC
  • 智能功率 ICs
  • What is the symbol at the end of the product name?
  • How do I calculate the current consumption and power dissipation?
  • How do I estimate the junction temperature?
  • How do I obtain the thermal resistance of the heat sink?
  • Is there a problem with installing a capacitor to the output?
  • What is the electric potential of the heat sink (metallic surface) on back side of IC package? Is that a GND?
  • What kind of material SiC is? And what kind of characteristics does SiC MOSFET have?
  • Can SiC MOSFET be connected in parallel and used?
  • Is the back of the SiC MOSFET package insulated?
  • What are the characteristics of body diode in SiC MOSET?
  • What changes when Si MOSFET/IGBT is replaced with SiC MOSFET?
  • What should be noted when setting SiC MOSFET gate voltage (VGS)?
  • What is Thermoflagger™?
  • What specific applications are Thermoflagger™ used for?
  • How many PTC thermistors can be connected simultaneously?
  • Is it possible to identify the heating point when several PTC thermistors are connected?
  • How accurate is the detected temperature?
  • What temperature ranges can be detected?
  • How do I select a PTC thermistor to use with Thermoflagger™?
  • long-term-supply-of-semiconductor-products
  • 專題
  • The Journey of Motor Control
  • 使用東芝的SiC MOSFET開啟電源的新大門
  • 3-Phase AC 400 V Input PFC Converter Reference Design
  • 5 kW Isolated Bidirectional DC-DC Converter Reference Design
  • Electronic fuses solve the problems of conventional fuses
  • Why are electronic fuses attracting attention?
  • What is eFuse ICs?
  • What are the applications of the eFuse IC?
  • Circuit example of eFuse IC
  • 高精度SPICE模型能更準確的提供類比離散功率元件的瞬態特性
  • High accurate SPICE model for low voltage MOSFET (12V-300V)
  • High accurate SPICE model for medium to high voltage MOSFET (400V-900V)
  • High accurate SPICE model download lists
  • Proposal for Electric Motor Applications
  • MBD (Model Based Development) using high-speed, high-precision thermal and noise simulation technology for automotive power semiconductor devices
  • How to install and use Accu-ROM™ on Ansys® Twin Builder™
  • Toshiba GaN Power device balances performance and ease of use
  • 散熱模擬模型：對應於三維熱流分析的簡易CFD模型已經擴展到MOSFET產品
  • 在機器人、 SCARA和自動導引車中實現高效、準確的伺服驅動。
  • 汽車乙太網路架構：採用乙太網路 AVB/TSN 的高品質車載音頻
  • 使用分立半導體裝置進行設計時的熱管理
  • 半橋式DC-DC轉換器方案有效降低資料中心的耗電量
  • 制定機箱中功率MOSFET的熱設計指南
  • Power semiconductors. Essential devices for a carbon-neutral future.
  • 建構效率更高的DC-DC轉換器：300 W隔離式DC-DC轉換器的效率評估與損耗分析
  • 無需專用軟體的線上電路模擬器
  • 高效率伺服器電源參考設計
  • 射頻SPDT開關（在小型封裝中實現高功率輸入的單刀雙擲開關）
  • Model-Based Development (MBD) initiatives for automotive semiconductor products
  • 3D Thermal Fluid Analysis of MOSFETs: Expanding Simplified CFD Model Suitable for cooling simulation
  • 安全性建議
  • TDSCSA00038: Installers of development tool software products for Toshiba original core-based microcontrollers have a security vulnerability
  • Product Information API Service
  • MOSFET
  • 12V - 300V MOSFETs
  • DSOP Advance, a Thermally Enhanced Double Side Cooling Package, improves the efficiency of power supply for high-current applications.
  • The U-MOSⅨ-H series are the ideal MOSFETs for improving the efficiency of switched-mode power supplies.
  • A wide choice of product variations ranging from ultra-small packages to general-purpose packages.
  • Pch MOSFET series using latest process
  • The U-MOSⅨ-H series has a greatly improved figure of merit that represents losses.
  • Switching noise reduction by snubber circuits (Low Spike Technology)
  • Toshiba's MOSFETs are ideal for low-voltage drive equipment.
  • Contributes to reducing loss of switching power supplies
  • Efficiency Improvement by Multi-Level Inverter with 150 V MOSFET
  • U-MOS X-H series 150 V MOSFET ideal for efficient switching power supplies
  • 30V N-Channel Common-Drain MOSFET Suitable for USB Devices and Battery Pack Protection
  • 車用 MOSFETs
  • Process Trends of Automotive MOSFETs
  • Switching characteristics of the N-ch U-MOS series
  • Package Trends of Automotive MOSFETs
  • Automotive applications drive miniaturization of small MOSFET sets
  • 400V - 900V MOSFETs
  • State-of-the-art super junction MOSFET DTMOSVI
  • Commercialization of new TO-247-4L packaging 600-V Super Junction Power MOSFET (DTMOSIV-H Series)
  • State-of-the-art double-diffusion MOSFET(D-MOS)π-MOSIX series
  • Contributes to Higher Efficiency of switched-mode power supply
  • 600V Super Junction MOSFET N通道DTMOS Ⅵ系列「TK024N60Z1」- 提升電源效率
  • SiC MOSFETs
  • 2nd Generation Features of SiC MOSFETs
  • 使用SiC MOSFET的好處是什麼？
  • 2nd Generation SiC MOSFET/IGBT Switching Loss Comparison
  • 3rd generation SiC MOSFETs that contributes to lower loss of power supply in application
  • 3rd generation SiC MOSFETs with New package TO-247-4L(X) released
  • SiC MOSFET Modules
  • Features of SiC MOSFET Modules
  • Features of Toshiba SiC MOSFET Modules
  • 隔離器／固態繼電器
  • Photocouplers for High Speed Communication
  • Compatibility with 3.3-V power supply and low power consumption
  • Broad lineup that supports transmission speeds ranging from 20 kbps to 50 Mbps
  • Sink/source logic input signal compatible products
  • Digital I/O design for industrial PLC
  • 閘極光耦合器
  • 過電流保護 (VCE(sat)檢測) 與內建主動式Millar clamp功能
  • Compatible with full-swing output
  • UVLO function support
  • Insulated gate driver expands the freedom of inverter drive circuit design
  • What is the gate-driver that facilitates the overcurrent protection design of inverter applications
  • Photocoupler for MOSFET and IGBT Gate Driver Suitable for Industrial Equipment
  • Lineup Expansion of Photocouplers for MOSFET and IGBT Gate Driver Suitable for Industrial Equipment
  • Photocouplers for IPM Interface
  • Response to higher speeds
  • Higher common-mode transient immunity (CMTI)
  • Support for high active and low active IPM
  • Isolation Amplifiers & Isolated Delta - Sigma Modulator
  • Implementing high-precision isolated signal transmission of input analog signal
  • Contributing to lower power consumption and stabilization of primary power supply design
  • Contributing to reduction of mounting space by adoption of a thin package
  • Photorelays (MOSFET Output)
  • What is a photorelay?
  • Photorelays using the latest-generation U-MOS
  • Small S-VSON4 packages
  • High-current (high-capacity) photorelay
  • UL 508 certification
  • 110°C Operation Guaranteed, High-capacity Compact Photorelay
  • 有助於提升強噪音環境下設備的可靠性
  • 具有低壓驅動和高溫工作額定值的小型化光繼電器
  • 用於高速通訊的光電耦合器
  • Small photorelay with high-speed switching
  • 具有大導通電流和高速開關功能的小型光繼電器
  • 適用於高壓功率MOSFET的驅動
  • Standard Digital Isolators
  • Over 100kV/μs high Common Mode Transient Immunity (CMTI)
  • Isolated 4 channel logic supporting 150Mbps data rate
  • Pulse Width Distortion (PWD) 3ns (max) corresponds to 150Mbps high-speed communication
  • What is the isolation life of the standard digital isolator "DCL54x01"?
  • What is the impulse voltage tolerance of the standard digital isolator "DCL54x01"?
  • Standard Digital Isolator with Robust Electromagnetic Compatibility (EMC)
  • 無線通訊元件IC
  • 藍芽®無線通訊ICs
  • 面向極低功耗無線電應用的高頻IC
  • 智能功率 ICs
  • 3-phase Brushless DC Motor Driver ICs, built-in Power Devices
  • Increased efficiency and increased current through multi-chip modules with built-in MOSFET
  • Reduction of Loss by the Latest High-breakdown-voltage SOI Processes
  • Reduction of mounting area by small surface-mount package compatible with high voltage
  • 600 V/3 A Small Intelligent Power Device for Brushless DC Motor Drives
  • Automotive Driver ICs
  • High-side and low-side switch products
  • Gate driver products
  • Optimal driver ICs for various automotive applications
  • 通用邏輯 Ics
  • CMOS Logic ICs
  • Supports all applications (industrial equipment-portable equipment) with an abundant lineup
  • What are the additional functions (input tolerant, power down protection) required for voltage level conversion and partial power down?
  • One-Gate Logic ICs (L-MOS)
  • One-gate logic (L-MOS) 7UL series (7ULxG) with 0.9V operation guarantee
  • L-MOS Supports industrial and portable equipment applications with wide lineup
  • Level Shifters
  • Dual power supply level shifter
  • Why are Level-shifters needed?
  • 支援最低0.8V電壓的4位雙電源匯流排收發器
  • Bus Switches
  • Bus switches suitable for switching various high-speed signals
  • Dual Power supply bus switch level shifter capable of voltage level conversion
  • Bus switch supporting high-speed digital signals of PCIe® Gen 5.0 and USB4®
  • Diodes
  • SiC Schottky Barrier Diodes
  • SiC devices suitable for power supply circuits
  • Improved junction barrier Schottky (JBS) structure to reduce the leakage current and increase the surge current capability: SiC Schottky barrier diodes (SiC SBDs)
  • SiC Schottky barrier diodes (SBDs) with low switching loss
  • High withstand voltage (reverse voltage) characteristics of SiC SBDs
  • Contributes to high efficiency and low loss of high output power supply
  • 3rd generation SiC Schottky barrier diode
  • TVS Diodes (ESD Protection Diodes)
  • ESD tolerance
  • ESD-pulse absorption performance for reducing 1st peak voltage
  • Extensive package lineup: developing smaller packages
  • Low dynamic resistance
  • Extensive package lineup: multi-bit packages
  • Ensuring signal quality: insertion power loss
  • 肖特基位障二極體
  • Schottky Barrier Diodes
  • Improved junction barrier Schottky (JBS) structure to reduce the leakage current and increase the surge current capability: Schottky barrier diodes (SBDs)
  • Zener Diodes
  • Zener diode for overvoltage protection
  • Zener diode that protects from various surges of overvoltage pulse
  • 一般用途IC
  • 馬達驅動 ICs
  • Brushless DC Motor Driver ICs
  • Intelligent Phase Control Technology
  • 東芝推出可適應廣泛應用的3相閘極驅動電路IC
  • Brushed DC Motor Driver ICs
  • Configurable Motor Drivers
  • 東芝推出具電流監控功能的直流有刷馬達專用驅動器
  • Stepping Motor Driver ICs
  • Advanced Dynamic Mixed Decay (ADMD) Technology
  • Advanced Current Detect System (ACDS) Technology
  • Active Gain Control (AGC) Technology
  • Microstepping technology
  • High-Voltage Analog Process Technology
  • PSpice® model download page
  • 感測器
  • 線性影像感測器
  • TCD2726DG
  • Monochrome sensor
  • Color sensor
  • Example of use
  • 行動周邊裝置應用橋接器
  • Display Interface Bridge ICs
  • Camera Interface Bridge ICs
  • HDMI® Interface Bridge ICs
  • I/O Expander ICs
  • 電源管理IC
  • Low-Dropout Regulators (LDO Regulators)
  • Noise reduction due to high ripple rejection ratio
  • Fast load transient response performance
  • Reduction of power consumption by low dropout voltage
  • Ultra-low Quiescent current
  • Extensive package lineup
  • Various additional functions
  • How to manage the power supply of mobile devices with high accuracy
  • How to drive battery-powered devices for a long time?
  • 有助於設備小型化並降低功耗
  • 東芝在東芝半導體（泰國）發表TCR3DMxxA和TCR3EMxxA系列LDO穩壓器
  • Load Switch ICs
  • Overcurrent protection function
  • Overvoltage protection function
  • Inrush current reduction circuit
  • Thermal shutdown
  • Extensive package lineup
  • Low input voltage operation/low on-resistance characteristics
  • Low current consumption characteristic of load switch ICs
  • Smaller Area and Higher Functionality
  • PFC控制IC
  • LED Driver ICs
  • eFuse ICs
  • High-precision overvoltage clamp function
  • IEC 62368-1 Safety standard certification
  • Function to suppress inrush current
  • All major protection functions are realized in one package
  • Quick short-circuit protection
  • High-precision overcurrent protection
  • Thermal shutdown function and recovery operation
  • Reverse current blocking function
  • The fuse electronization changes the design?
  • How quick is the protection speed of the electronic fuse?
  • MOSFET Gate Driver ICs
  • MOSFET Gate Driver IC Overview
  • Example of load switch circuit with MOSFET Gate Driver IC and N-channel MOSFET.
  • 線性 Ics
  • Operational Amplifiers and Comparators
  • Contributing to long-term operation of equipment, ultra-low-current operational amplifier
  • Low-voltage, wide-range input signals can be amplified and processed
  • Ultra-low-noise Operational Amplifier Optimal for Sensor Small-signal Amplification
  • Extensive package lineup
  • Realizes high-sensitivity and high-precision sensing performance
  • Transistor Arrays
  • Realize low on resistance from bipolar output to DMOS output
  • Package lineup
  • Automotive audio power amplifier ICs
  • 4-channel High-Efficiency Automotive Audio Power Amplifier IC: TCB701FNG
  • 4-channel High-Efficiency Automotive Audio Power Amplifier IC Featuring Maximum 45W Output: TCB702FNG
  • Automotive Audio Power Amplifier IC with Strong Resistance to Power Surges: TCB503HQ
  • Current-Feedback 4-channel Automotive Audio Power Amplifier IC with Built-In Full-Time Offset Detection: TCB502HQ
  • 45-W class 4-channel Automotive Audio Power Amplifier IC with using a new CD-0.13 process: TCB001HQ
  • Current-Feedback 4-channel Automotive Audio Power Amplifier IC with Built-In Full-Time Offset Detection: TCB501HQ
  • Supports external audible outputs from vehicles, allowing use of electric vehicle warning sound systems in HEVs and EVs: TB2909FNG
  • Thermoflagger™ (Over temperature detection IC)
  • Over temperature detection solution with Thermoflagger™
  • 車用元件
  • Automotive Ethernet Bridge ICs
  • Video Processors
  • TC90193SBG
  • Automotive Brushless Motor Driver ICs
  • 3-phase BLDC Motor Pre-driver IC for Sine Wave Current Control: TB9080FG
  • Sensorless 3-phase BLDC Motor Pre-driver IC: TB9061AFNG
  • Three-Phase Brushless Sensorless Pre-driver IC TB9062FNG
  • 3-Phase BLDC Motor Pre-driver IC for EPS Applications: TB9081FG
  • Gate-Driver IC for Automotive Three-Phase Brushless Motor: TB9083FTG
  • Gate-Driver IC for Automotive Three-Phase Brushless Motor: TB9084FTG
  • Automotive TVS Diodes (ESD Protection Diodes)
  • ESD tolerance
  • Low dynamic resistance
  • Ensuring signal quality: insertion power loss
  • Extensive product lineup in a wide choice of packages: developing smaller packages
  • Automotive Stepping Motor Driver ICs
  • Automotive Stepping Motor Driver IC:IC TB9120FTG
  • Automotive Brushed DC Motor Driver ICs
  • 1-Channel Brushed DC Motor Driver IC: TB9051FTG
  • H-bridge Pre-driver IC: TB9057FG
  • Automotive DC motor driver IC with LIN slave function：TB9058FNG
  • PWM 2ch H-Bridge DC Brushed Motor Driver Integrated Circuit (IC) for Automotive
  • Gate Driver IC for Automotive Brushed Motors
  • Video Decoder ICs
  • Product Introduction
  • Automotive System Power Supplies ICs
  • TB9044AFNG Overview
  • TB9045FNG Series Overview
  • Sub-GHz transceiver IC for Automotive TC32306FTG
  • Automotive Network Communication
  • 微控制器
  • TX Family / TX00 Series
  • Application : Sencer Hub (TMPM066/067/068)
  • Application : Smart Meters (TMPM061)
  • M030群
  • M060群
  • TX Family/TX04 Series
  • Application : AV Amplifier
  • Application : Air Conditioner
  • M460群
  • M470群
  • TXZ3系列
  • Application : Refrigerator
  • Sample Software
  • TXZ4系列
  • Application : Air Conditioner
  • Application : MFP
  • Application : Air Conditioners
  • TX Family/TX03 Series
  • Application : Smart Meters
  • Application : Digital TV
  • Application : Camera Lens
  • Features of the TMPM369FDFG and TMPM369FDXBG
  • Application : Printer
  • Features of the Vector Engine (VE)
  • Application : Washing Machine
  • Ceiling fan demo-machine
  • Application : Induction Cooktops
  • M310群
  • M330群
  • M360群
  • M380群
  • M370群
  • CAN (Controller Area Network)
  • Multi Purpose Timer (MPT)
  • OFD (Oscillation Frequency Detector)
  • Remote Control Signal Processor (RMC)
  • EtherMAC (Ethernet Media Access Control)
  • USB (Universal Serial Bus)
  • Vector Engines
  • I2S (Inter-IC Sound)
  • TLCS-900/H1系列
  • TX19A/H1系列
  • TX09系列
  • TLCS™ Family/TLCS™-870/C1 Series and TLCS™-870/C1E Series
  • TLCS-870/C1系列和TLCS-870/C1E系列
  • Oscillator Manufacturer Information
  • Not Recommended for New Design / EOL Announced Products
  • TX19A系列
  • TLCS-900系列
  • TLCS-900/H系列
  • TLCS-900/L系列
  • TLCS-900/L1系列
  • TLCS-870/C系列
  • TLCS-870/X系列
  • TX09系列
  • Software Library
  • M3H Group Sample Software
  • M4K Group Sample Software
  • M4G Group Sample Software
  • M4L Group Sample Software
  • M030 Group Sample Software
  • M060 Group Sample Software
  • M310 Group Sample Software
  • M330 Group Sample Software
  • M340 Group Sample Software
  • M360 Group Sample Software
  • M370 Group Sample Software
  • M380 Group Sample Software
  • TMPM3U0 Group Sample Software
  • TMPM3V6 / M3V4 Group Sample Software
  • TMPM3U6 Group Sample Software
  • M440 Group Sample Software
  • M460 Group Sample Software
  • TLCS-870/C1 Series Sample Software
  • Download Agreement
  • M4K Group Sample Software
  • M4M Group Sample Software
  • M4G Group Sample Software
  • M4N Group Sample Software
  • M3H Group Sample Software
  • M470 Group Sample Software
  • M4K Group Sample Software
  • 合作夥伴
  • IAR Systems AB
  • ESP Co., Ltd
  • Arm Ltd. (KEIL)
  • Computex Co.,Ltd.
  • Green Hills Software / Advanced Data Controls Corp.
  • iFORCOM KYOEI Co.,Ltd.
  • Sohwa & Sophia Technologies Inc.
  • DTS INSIGHT CORPORATION (formerly Yokogawa Digital Computer Corporation)
  • GRAPE SYSTEMS INC.
  • Ubiquitous AI Corporation
  • Elnec s.r.o.
  • Andor System Support Co., Ltd.
  • SEGGER Microcontroller GmbH & Co. KG
  • ZLG (GUANGZHOU ZHIYUAN ELECTRONICS CO., LTD)
  • BITRAN CORPORATION
  • Technohands Co., Ltd.
  • CATS CO.,LTD.
  • Techno Mathematical Co.,Ltd.
  • TOA ELECTRONICS, Inc. Flash Support Group Company
  • Tokyo Eletech Corporation
  • TOSHIBA INFORMATION SYSTEMES (JAPAN) CORPORATION
  • Falcon Denshi K.K.
  • MICROTEK Inc.
  • Minato Advanced Technologies Inc.
  • SORD CORPORATION
  • Ubiquitous Computing Technology Corporation
  • Lauterbach Japan Ltd.
  • VAMOS
  • P&E Microcomputer Systems, Inc.
  • Xeltek Inc.
  • eForce Co., Ltd.
  • KYOCERA Corporation
  • Kyoto Microcomputer Co.,Ltd.
  • HI-LO SYSTEMS RESEARCH CO.,LTD
  • GAIO TECHNOLOGY CO.,LTD.
  • DediProg Technology Co., Ltd
  • 開發環境
  • TX Family / TXZ Family Development System
  • TX09系列開發系統　
  • TX19A/H1系列開發系統
  • TLCS-900/H1 Series Development Environment
  • TLCS-870/C1 Series Development System incircuit
  • TLCS-870/C1 Series Development System onchipdebug
  • FLASH / OTP程式設計工具
  • TLCS-900/H1 Series Development System onchipdebug
  • TLCS-900/H1 Series Development System incircuit
  • TLCS-900/H1 Series Development System cf29a30_incircuit
  • TLCS-900/H1 Series Development System m15incircuit
  • TLCS-900/H1 Series Development System m25incircuit
  • TLCS-900/H1 Series Development System m15onchipdebug
  • TLCS-900/H1 Series Development System cf29a30_m15incircuit
  • TX19A/H1 Series Development System lightonchipdebug
  • TLCS-870/C1 Series Development Environment
  • TXZ+™ Family/TXZ+™4A Series
  • M4K群
  • M4M群
  • M4G群
  • M4N群
  • TXZ+™ Family/TXZ+™3A Series
  • Application : Refrigerator
  • M3H群
  • MCU電機工作套件3.0
  • IGBTs/IEGTs
  • IEGT (PPI)
  • Press-Pack package
  • Principle of Operation
  • IGBTs
  • Low loss (IGBT)
  • Low loss (FRD)
  • Short-circuit current reduction
  • Wide safe operation area
  • Low radiated emission noise
  • 雙極性電晶體
  • 功率半導體
  • 無線電動工具
  • 車用元件
  • Industrial Equipment
  • Consumer / Personal Equipment
  • 產品封裝資訊
  • 線性 Ics
  • Diodes
  • MOSFET
  • 光半導體
  • QFP Type
  • QFN Type
  • 雙極性電晶體
  • SOP Type
  • DIP Type
  • ZIP Type
  • 感測器
  • 一般用途IC
  • General-Purpose Logic ICs
  • 電源管理IC
  • 智能功率 ICs
  • IGBTs/IEGTs
  • 參考設計中心
  • 交換式電源供應器工具庫
  • Supports simulation circuit for LTspice®
  • Supports simulation circuit for OrCAD®
  • Specification input form for circuit selection
  • The simulation files can be downloaded in a zip file.
  • 交換式電源供應器工具庫（SMPS Lib.）協議
  • Switched Mode Power Supply Library tool
  • Switched Mode Power Supply Library main
  • 開發板
  • 型號命名規則
  • 雙極性電晶體
  • Microcontroller
  • IGBT/IEGT
  • Diodes
  • 線性 Ics
  • MOSFET / 結型場效應管
  • 通用邏輯IC
  • 隔離器／固態繼電器
  • 一般用途IC
  • 馬達驅動 ICs
  • 應用說明
  • 馬達控制和驅動電路的線上模擬資料庫
  • Motor Control and Driver Circuit Library tool
  • Switched Mode Power Supply Library main
  • Agreement on Motor Control and Driver Circuit Library
  • EDA／CAD模型庫
  • PSpice® Simulation Model
  • LTspice® Simulation Model
  • Package 3D Data (STEP)
  • Land Pattern
  • SIMetrix® Simulation Model
  • ELDO™ Simulation Model
  • IBIS Simulation Model
  • Simplified CFD Model for Thermal Analysis
  • Cautions on Simulation Model
  • 線上電路模擬器
  • Simple Specification Input
  • Simulation Setting Selection
  • Check Simulation Results
  • Agreement on Online Circuit Simulator
  • 樣品 / 購買
  • 線上庫存查詢跟購買
  • 新會員註冊表單
  • 儲存產品 (HDD)
  • 支援
  • 儲存產品相關FAQ
  • Where can I purchase Toshiba HDD(s)?
  • I would like to buy a case or a cable for my bare HDD.
  • What is the warranty on Toshiba HDDs?
  • My drive is defective. How can I have it repaired?
  • Will the data on my HDD be available after repair? Does Toshiba provide data recovery?
  • Will I receive the same drive in return?
  • How can I distinguish a Toshiba drive from other vendor's products?
  • I would like to know rule of naming (model number) of Toshiba HDD.
  • Can you provide specifications for Toshiba HDD?
  • I would like to receive a manual or any technical reference document for my drive.
  • I need a formatting tool of HDDs.
  • I need an HDD driver.
  • I would like to get the firmware for my HDD.
  • I need a diagnosis tool of HDDs.
  • My system does not recognize the HDD which is designed for built-in use. Please tell me which HDDs are to be recognized.
  • I would like to replace HDD installed in PC. What kind of Toshiba HDD can be installed to my PC as a replacement?
  • My PC is not able to recognize all the available capacity of the upgraded HDD.
  • My hard disk drive produces strange noises.
  • I would like to know if the 3.5 inch HDD bottom mounting holes position can be different between the model.
  • Do our HDDs comply with Halogen-free?
  • Why does my HDD label shows “Reconditioned” wording?
  • I would like to request a parameter sheet for exporting HDD from Japan to another country.
  • Will Toshiba support the HDD that was made by HGST or Western Digital (WD) company in May 2012 or before?
  • Does Toshiba support Fujitsu HDDs, which are designed for built-in use?
  • 3.5 inch HDD - Location of bottom mounting holes
  • 安全性建議
  • TDSCSA00699-02: Vulnerability found related to Unquoted Search Path or Element
  • 相容性訊息
  • NAS System Compatibility
  • Surveillance System Compatibility
  • 停產產品檔案
  • 型號含義
  • 保固支援
  • TW RoHS for HDD
  • 深圳市新欣威视科技有限公司
  • 河南丰图美晟电子科技有限公司
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  • Toshiba to Start Mass Production of ApP Lite™ Processor Family IC for Wearable Applications
  • Toshiba’s Visconti™4 Image Recognition Processor Powers DENSO’s Front-Camera-Based Active Safety System
  • Toshiba Electronic Devices & Storage Corporation Adds 500V Sine-Wave Driver IC Housed in Small Surface Mounting Package for Three-Phase Brushless Fan Motors
  • Toshiba Electronic Devices & Storage Corporation Announces New 1TB Hard Disk Drive for Mobile Client Storage Applications
  • Toshiba Electronic Devices & Storage Corporation Launches High Performance, High Peak Pulse Current TVS Diodes for Power Line Protection
  • Toshiba Electronic Devices & Storage Corporation Announces New Line-up of Stepping Motor Driver ICs with Anti-Stall Feedback Architecture
  • Toshiba Electronic Devices & Storage Corporation to Unveil Low Voltage 5GHz Receiver for Next-Generation Wireless LAN
  • Toshiba Electronic Devices & Storage Corporation Launches 10-terabyte Enterprise Capacity HDD
  • Toshiba Electronic Devices & Storage Corporation Launches Photocoupler with UVLO Function for Digital Control Switching Power Supplies and IPM Drive
  • Toshiba Electronic Devices & Storage Corporation Adds New Line-up of High Speed Signal Transmission Photorelays with Industry’s Smallest Footprint
  • Toshiba Electronic Devices & Storage Corporation Releases Small Active-Clamp MOSFET for Relay Drivers
  • Toshiba Electronic Devices & Storage Corporation’s 300mA Small LDO Regulator ICs Combine Low Quiescent Bias Current with High Ripple Rejection Ratio and Fast Load Transient Response
  • Toshiba Electronic Devices & Storage Corporation Releases N-channel MOSFET Driver ICs in Industry-Leading Small Package for Mobile and Consumer Applications
  • Toshiba Electronic Devices & Storage Corporation to Boost Automotive Semiconductor Solutions Business
  • Toshiba Electronic Devices & Storage Corporation Adds New Three-Phase Brushless Fan Motor Controller IC Allowing Easy Switching to Multipolar Motor
  • Toshiba Electronic Devices & Storage Corporation Starts Sample Shipment of Constant-Current 2-Phase Stepping Motor Driver for Automotive Applications
  • Toshiba Electronic Devices & Storage Corporation Adds Second-Generation 650V SiC Schottky Barrier Diodes in DPAK Surface-Mount Type Package
  • Toshiba Electronic Devices & Storage Corporation Contributions Make Toshiba the Winner of the 2017 MIPI Corporate Award
  • Toshiba Electronic Devices & Storage Corporation Launches New Surface-Mount Brushed Motor Driver IC
  • Vulnerability found related to the generation and management of WPA2 Key on CANVIO (STOR.E) wireless products
  • Toshiba Electronic Devices & Storage Corporation Releases Medium Voltage, High Capacity Photorelay in Small Package
  • Toshiba Electronic Devices & Storage Corporation Releases 1.5A LDO Regulators in Industry’s Smallest Package for Mobile Applications
  • Toshiba Electronic Devices & Storage Corporation’s New Surveillance Hard Disk Drive Series Delivers up to 10TB Capacity
  • Nexty Electronics and Toshiba Microelectronics Establish Software Development Joint Venture
  • Toshiba Electronic Devices & Storage Corporation Launches 10TB HDD for NAS Applications
  • Toshiba Electronic Devices & Storage Corporation Introduces New Bluetooth® low energy IC for Automotive Applications
  • Toshiba Electronic Devices & Storage Corporation Launches 4-channel High-Efficiency Linear Power Amplifier for Car Audio
  • Toshiba Electronic Devices & Storage Corporation Launches World’s First 14TB HDD with Conventional Magnetic Recording
  • Toshiba Electronic Devices & Storage Corporation Adds Power Amplifier IC Adopting Pure MOS for Car Audio
  • Toshiba Electronic Devices & Storage Corporation Releases 100V N-Channel Power MOSFETs for Industrial Applications with the Industry’s Lowest-in-Class On-resistance
  • Toshiba Electronic Devices & Storage Corporation Launches New Series of Next Generation 10,500 RPM Enterprise Performance 2.5-inch HDD
  • Toshiba Electronic Devices & Storage Corporation Releases High-Current Photorelays for Factory Automation and Other Industrial Applications that Can Replace Mechanical Relays
  • Toshiba Electronic Devices & Storage Corporation Launches Two New ICs Compliant with Bluetooth® Ver.5.0
  • Toshiba Electronic Devices & Storage Corporation Unveils New-Generation 600V Planar MOSFET Series
  • Toshiba Electronic Devices & Storage Corporation Introduces SOI Process with Low Noise Figure for Low-Noise RF Amplifiers for Smartphones
  • Toshiba Electronic Devices & Storage Corporation Releases Small Dual MOSFET for Relay Drivers
  • TDSCSA00358: Default Password Vulnerability in CANVIO (STOR.E) wireless products
  • Toshiba Announces New 2TB Hard Disk Drive for Client Storage Applications
  • Toshiba Electronic Devices & Storage Corporation Publishes English Edition of Environmental Report 2017
  • Toshiba Expands New Packaging Option for SO6L IC-Output Photocouplers
  • Lineup expansion of 100 V N-channel power MOSFET U-MOSIX-H series products that help improve the efficiency of power supplies: TK2R9E10PL, etc.
  • Toshiba’s New Three-Phase Brushless Fan Motor Driver IC Has a Rotation Speed Control (Closed Loop Control) Function
  • Toshiba Releases Medium-voltage Photorelay in Small 4-pin SO6 Package for Factory Automation and Other Industrial Applications
  • Toshiba Releases Automotive 40V N-channel Power MOSFETs in New Package
  • TOSHIBA RELEASES FULL LINE-UP OF CONSUMER HARD DRIVES
  • Toshiba Shipping Samples of Motor Driver IC with High-Definition Micro Stepping
  • Toshiba Electronic Devices & Storage Corporation’s Technology Improves Reliability of Long-Range and High-Pixel Resolution Automotive LiDAR
  • Toshiba Electronic Devices & Storage Corporation Announces Updated List of Directors and Auditors
  • Toshiba Releases Photorelay for Factory Automation and Other Industrial Applications
  • New Technology from Toshiba Electronic Devices & Storage Corporation and Japan Semiconductor Corporation Enhances Reliability of N-channel LDMOS for 0.13-micron Generation Analog Power ICs
  • Toshiba Launches H-bridge Driver IC Supporting 1.8V Low-Voltage and 1.6A Large-Current Drive
  • Toshiba’s Arm® Cortex®M Core-based Microcontrollers Support Mbed™ OS
  • Toshiba Electronic Devices & Storage Corporation and ABLIC Inc. to Ally in Mixed Signal IC business
  • Toshiba Releases Interface Bridge Devices for Automotive Infotainment Applications
  • Toshiba Electronic Devices & Storage Corporation Unveils Bluetooth® Low Energy SoC with Long-distance Communication and Low Power Consumption
  • Toshiba Announces New Analog Output IC Photocoupler for Automotive Applications
  • Toshiba Announces 14TB HDD Availability on Select Supermicro Storage Servers
  • Toshiba Develops Low Reverse-Current Schottky Diode with Improved Thermal Performance
  • Toshiba Starts Shipment of UL508 Certified Photorelays for Industrial Control Equipment
  • Toshiba Releases Compact Power MOSFET Gate Driver Intelligent Power Device
  • TDSCSA00436：Multiple Vulnerabilities in CANVIO Network Storage Products
  • Software Update Termination for CANVIO Network Storage Products
  • Toshiba Launches Adapter for Unidirectional Optical Modules for Short Distance Data Transmission
  • TOSHIBA 推出專為NAS平台打造的全新 MN07 系列硬碟 全方位滿足OEM與整合商之需求
  • Toshiba Releases Arm® Cortex®-M3-based Microcontrollers with Low Power Consumption and Advanced Functions for Consumer and Industrial Equipment
  • Toshiba Launches High Current Photorelays in DIP4 Package
  • Toshiba Develops 40V N-channel Power MOSFETs with Improved Thermal Performance
  • Toshiba Announces Next-Generation Superjunction Power MOSFETs
  • TOSHIBA 提供 SAS HDD 機型更大容量
  • Toshiba Launches Power Amplifier for Car Audio with Strong Resistance to Power Surges
  • Toshiba Releases DC Brushed Motor Driver IC with Current Limiter Detection
  • Toshiba’s Advanced Bluetooth® Low Energy SoC Delivers Long-distance Communication in a Compact Module
  • Toshiba Releases Bluetooth® 5 IC for Automotive Applications
  • Toshiba Adds New 4-channel High-Efficiency Linear Power Amplifier for Car Audios Featuring Maximum 45W Output
  • Toshiba Unveils 130nm FFSA™ Development Platform Featuring High Performance, Low Power and Low Cost Structured Array
  • Toshiba Testing Laboratory Meets Global Standard, Receive ISO/IEC 17025 Accreditation
  • TOSHIBA推出全新 4TB CANVIO 外接式硬碟 儲存個資更安全可靠
  • TOSHIBA N300 NAS硬碟 推出全新12TB與14TB氦氣填充封裝機型
  • Toshiba Launches H-bridge Driver IC Supporting 1.8V Low-Voltage and 4.0A Large-Current Drive
  • Toshiba Develops DNN Hardware IP for Image Recognition AI Processor Visconti™5 for Automotive Driver Assistance Systems
  • TOSHIBA 推出 16TB MG08 系列硬碟
  • Toshiba Expands Ethernet Bridge IC Lineup for Automotive and Industrial Applications
  • Toshiba Starts Sample Shipments of Automotive DC Motor Driver IC with LIN Slave Function
  • Toshiba Brings Arm® Cortex®-M core-based Microcontrollers to Thundersoft’s MCU Boards
  • Toshiba Image Recognition SoC for Automotive Applications Integrates a Deep Neural Network Accelerator
  • Toshiba Launches One-Gate Logic with Single Power Supply Supporting Low Voltage Operation
  • Toshiba Electronic Devices & Storage Corporation Publishes English Edition of Environmental Report 2018
  • Toshiba’s New Small Surface Mount LDO Regulators Lower Power Consumption and Bring Longer Operating Times to Battery-driven Devices
  • Toshiba Launches Sensorless Control Pre-driver IC for Automotive BLDC Motors
  • Toshiba’s New Semiconductor Company Will Strengthen Solution Proposals and Bring Greater Efficiency to R&D
  • Toshiba’s Arm® Cortex®-M4-based Microcontrollers with Built-in Timers and Communication Channels Achieve High-Speed Data Processing
  • Toshiba Employee Receives 2018 MIPI Lifetime Achievement Award
  • Toshiba Launches Three-phase Brushless Motor Controller ICs with Sine Wave Drive
  • Toshiba New Algorithm Greatly Improves Angular Resolution of Automotive LiDAR
  • Actions to stabilize System LSI business
  • Toshiba Starts Shipment of UL 508 Certified Photorelays for Industrial Control Equipment
  • Toshiba Launches Low Power Consumption Brushed DC Motor Driver IC with Popular Pin-assignment HSOP8 Package
  • Analog Power IC Process Technology Developed by Toshiba and Japan Semiconductor Enhances Reliability of LDMOS for Automotive Applications
  • Toshiba Launches Lens Reduction Type, 5340-Pixel by 3-line Linear Image Sensor for Office Automation and Industrial Equipment
  • Toshiba Launches New Family of Low Voltage Driven Photorelays --Photorelays in tiny packages enable high-density assembly in test equipment applications--
  • 搭載東芝高階影像識別處理器的豐田Alphard/Vellfire車款，榮獲日本最高預防安全性能獎賞
  • Toshiba’s IGBT/IEGT Compact Modeling Realizes Highly Accurate Prediction of Power Efficiency and EMI Noise
  • Toshiba Adds 16TB Capacity to N300 and X300 Internal Hard Drive Series
  • Toshiba Launches Voltage Driven Photorelay in Industry’s Smallest Package with Reduced Input Power Dissipation
  • Toshiba Launches High-voltage Dual-channel Solenoid Driver IC
  • Toshiba Launches 600V Sine-Wave PWM Driver IC for Three-Phase Brushless Motors
  • 東芝推出適用於ThunderboltTM 3及其他高速訊號線的低電容TVS Diode
  • 東芝新推出採用智慧相位控制及閉環速度控制技術之三相無刷馬達控制預驅動IC
  • Strategies about Logic LSI (advanced ASIC) business
  • 東芝推出首款可重複使用電子熔斷器 - eFuse IC
  • Toyota Lexus UX and Lexus NX with Toshiba’s Image Recognition Processor Win Highest Score in Japan’s Assessment of Preventive Safety Performance
  • Toshiba Electronic Devices & Storage Corporation Publishes English Edition of Environmental Report 2019
  • TOSHIBA推出適用於DVR與NVR平台的 6TB監控用硬碟
  • Toshiba’s New Three-Phase Brushless Motor Control Pre-Driver IC Features Sensorless Control and Closed Loop Speed Control
  • 東芝推出具有多路輸出以實現汽車功能安全的通用系統電源IC
  • 東芝推出用於電壓諧振電路的新型分立IGBT
  • 東芝推出車用緊湊型封裝100V N通道功率MOSFET
  • Toshiba Electronic Devices & Storage Corporation Announces a Plan to Change CEO
  • Toshiba Electronic Devices & Storage Corporation Announces a Plan to Change Directors
  • 東芝推出適用於PLC高速通訊邏輯輸出光耦合器
  • 東芝推出高解析度微步進馬達驅動IC
  • 東芝推出適用於工廠自動化及工業應用小封裝大電流光繼電器
  • 東芝推出新款低功耗有刷直流馬達驅動IC
  • 東芝推出100V N通道功率MOSFET有助於降低車用設備功耗
  • 東芝推出適用於5G智慧手機的射頻開關和低雜訊放大器IC
  • TOSHIBA最新企業級硬碟通過 Microchip Technology Adaptec® 主機匯流排介面卡和RAID介面卡相容性測試
  • 東芝推出驅動中高電流IGBT/MOSFT之光耦合器
  • 東芝擴大物聯網應用32bit TXZ+微控制器
  • Toshiba’s 80V N-channel Power MOSFETs Fabricated with Latest Generation Process Help Improve Power Supply Efficiency - Expanding line-up of U-MOS X-H power MOSFET series -
  • Reduction of Business Days in April at Toshiba Electronic Devices & Storage Corporation and its Group Companies in Japan
  • TOSHIBA消費型硬碟中的疊瓦式磁記錄（SMR）技術
  • 東芝針對車用ECU推出MOSFET閘極驅動器開關IPD
  • 東芝推出600V小型智慧功率元件(IPD)可降低馬達功率耗損
  • 東芝針對車載資訊娛樂系統(IVI)推出全新車載顯示器橋接IC
  • 東芝推出適用於工業設備的縮影鏡頭型, 1500畫素/單色CCD線性影像感測器
  • 搭載東芝影像識別處理器的豐田汽車連續兩年榮膺日本汽車防預安全性能最高獎項
  • 東芝推出業界首款能於2.2V低工作電壓下工作的高速通信光耦合器
  • 東芝針對車載應用推出定電流雙相步進馬達驅動IC
  • 東芝推出可提高SiC (碳化矽)MOSFET可靠性
  • 東芝與MikroElektronika合作推出馬達驅動IC開發評估板
  • 中國浙江亞太電機(APG)選用東芝ViscontiTM4影像辨識處理器應用於ADAS解決方案
  • 東芝推出新型低觸發電流光繼電器
  • 東芝推出業界尺寸最小的新型光繼電器
  • TOSHIBA Canvio系列外接儲存裝置再添生力軍 發表全新外型設計與應用軟體
  • 東芝推出採用最新封裝的光繼電器實現高密度貼裝
  • 東芝和日本半導體株式會社研發了旨在提高模擬IC用P溝道LDMOS可靠性的新技術
  • 東芝和日本半導體株式會社研發了具有高耐受性的LDMOS單元陣列
  • Toshiba’s IGBT and FWD Compact Modeling Realizes Highly Accurate Prediction of Power Efficiency and EMI Noise for Multiple External Condition
  • Toshiba Launches Ultra-Low Current Consumption CMOS Operational Amplifier that Contributes to Longer Operating Hours of Battery-Operated Devices
  • Toshiba Electronic Devices & Storage Corporation Implements New Strategies for System LSI Business
  • Toshiba Releases Small, Low On-resistance Common-drain MOSFET that Contributes to Longer Battery Operating Hours
  • Toshiba’s Cascode GaN Discrete Power Device Realize Stable Operation and Simplifies System Design with Direct Gate Drive
  • Toshiba Launches 1200V Silicon Carbide MOSFET that Contributes to High-efficiency Power Supply
  • 東芝針對行動裝置和家用電器推出採用PWM控制的雙H橋馬達驅動IC
  • TOSHIBA 升級 4TB、6TB 和 8TB 企業級容量型硬碟
  • Toshiba Launches High Ripple-Rejection Ratio, Low-Noise LDO Regulators with Enhanced Power-Line Stabilization
  • Notice on Media Coverage
  • Toshiba Employee Receives 1906 Award from IEC
  • Toshiba Electronic Devices & Storage Corporation Publishes English Edition of Environmental Report 2020
  • Toshiba Launches 5A 2ch H-Bridge Motor Drivers for Automotive Applications
  • Toshiba Introduces 5 new groups of TXZ+™ Family Advanced Class Microcontrollers that Realize Low Power Consumption, Support System Cost Reduction and Motor Control
  • Toshiba Adds New eFuse IC, an Electronic Fuse for Repeated Use that Offers Adjustable Overvoltage Protection and FLAG Signal Output Function
  • Toshiba Launches 100V High-current Photorelay for Industrial Equipment
  • TOSHIBA 宣布推出全新18TB MG09系列硬碟
  • Toshiba Launches Silicon Carbide MOSFET Module that Contributes to Higher Efficiency and Miniaturization of Industrial Equipment
  • 東芝推出輕薄緊湊型LDO穩壓器幫助縮小產品尺寸和穩定電源輸出
  • 東芝電子器件及存儲裝置株式會社宣佈對功率器件業務進行重大投資
  • 東芝推出採用TOLL封裝的650V 超接合面Super Junction功率MOSFET，有助於提高大電流設備的效率
  • 東芝為A3多功能印表機推出微縮鏡頭型CCD線性圖像感測器
  • 東芝的碳化矽功率模組新技術提高了可靠性及同時縮小了尺寸
  • 東芝推出1-Form-B光繼電器，以業界最高[1]導通額定電流實現更豐富的應用
  • Toshiba Electronic Devices & Storage Corporation Announces Changes to Directors and Auditors
  • 東芝推出用於隔離式固態繼電器的光伏輸出光耦器
  • Toshiba and Japan Semiconductor Demonstrate Simultaneous Optimization of ESD Tolerance and Power Efficiency for High Voltage LDMOS for Automotive Analog ICs
  • Toshiba Electronic Devices & Storage to Unify Business Unit Operating Bases
  • Toshiba Positively Evaluates No-Solder Connector Technologies for the Trillion-Node Engine IoT Open Platform
  • Toshiba’s New Device Structure Improves SiC MOSFET High Temperature Reliability and Reduces Power Loss
  • 東芝推出TXZ+TM系列之第一代高階產品—適用於馬達控制的Arm® Cortex®微控制器
  • TOSHIBA近線硬碟 出貨數量及容量 2021第2季創新高
  • 東芝在TXZ+TM系列高階版中推出新款適用於高速資料處理的M4G群組 Arm® Cortex®-M4控制器
  • 東芝模型化開發的新型模擬技術將汽車半導體的驗證時間縮短約90%
  • 東芝推出無需電流偵測電阻的40V/2.0A步進馬達驅動晶片
  • 東芝支援功能安全性的汽車用無刷馬達預驅動器晶片樣品開始出貨
  • 東芝推出TXZ+TM族進階系列新型M4N組Arm® Cortex®-M4微控制器
  • 11
  • TOSHIBA近線硬碟 2021第3季締造出貨數量新紀錄
  • 東芝發布其首款200V電晶體輸出車載光耦
  • 東芝被認為是菲律賓最大的出口商
  • 東芝推出用於IGBT/MOSFET閘極驅動的薄型封裝高峰值輸出電流光耦
  • TOSHIBA 發表全新N300 18TB NAS 硬碟
  • 東芝新推出的4-Form-A電壓驅動光繼電器擁有業界超小[1]的安裝面積，將有助於縮減半導體測試儀尺寸
  • 東芝擴大用於汽車資訊通訊系統和工業設備的乙太橋接IC產品陣容
  • 東芝推出新款IC晶片，為提升穿戴裝置和物聯網設備續航能力開闢道路
  • 東芝發佈適用於智慧電表的光繼電器，支援低輸入功率和高工作溫度
  • 東芝發布1500V高電壓汽車用光繼電器
  • 東芝新推出的1200V和1700V碳化矽MOSFET模組幫助實現尺寸更小、更高效率的工業設備
  • 東芝率先[1]在氮化鎵（GaN）元件上應用電流感測技術，實現了功率損耗更低、電流感測精度更高、電源系統體積更小的GaN器件
  • 東芝新建300毫米晶圓廠房擴大功率半導體產能
  • 東芝推出無霍爾感測器正弦波驅動三相無刷直流馬達控制預驅動積體電路，有助於降低振動和噪音
  • 東芝發布新型MOSFET閘極驅動積體電路，有助於縮小元件尺寸
  • TOSHIBA 2021年硬碟出貨量及出貨容量年增率創佳績
  • TOSHIBA宣佈2023年將推出30TB硬碟
  • 東芝推出超低電容TVS二極體，可保護物聯網設備高頻天線免受ESD侵擾
  • 東北地區地震對東芝電子元件及儲存裝置株式會社集團業務的影響
  • 東芝電子元件及儲存裝置株式會社宣佈董事變更的計劃
  • 日本東北地區地震對東芝電子元件及存儲裝置株式會社集團業務的影響（最新消息2）
  • 日本東北地區地震對東芝電子元件及存儲裝置株式會社集團業務的影響（最新消息3）
  • 東芝推出採用最新一代工藝的150V N通道功率MOSFET，可大幅提高電源效率
  • 東芝推出TXZ+™ 族高級系列全新M3H組ARM ® Cortex®-M3 微控制器
  • 東芝擴大與MikroElektronika的合作，推出用於馬達控制的TMPM4K開發板Clicker 4
  • 東芝電子元件及儲存裝置株式會社宣佈董事變更的計劃
  • 東芝和日本半導體株式會社共同研發了用於車載應用的具有嵌入式非易失性記憶體的高可靠度多功能模擬平臺
  • Toshiba宣布推出全新DT02系列7200 RPM 2TB硬碟
  • 東芝新增五款MOSFET閘極驅動器IC，有助於減少裝置尺寸
  • 東芝電子元件及儲存裝置株式會社宣佈董事變更的計劃
  • 東芝與Farnell加強供應鏈合作，以擴大新產品和創新產品範圍
  • 東芝開發全球首款雙柵極RC-IEGT，可降低開關損耗
  • 東芝的新型SiC MOSFET具有低導通電阻，顯著降低了開關損耗
  • 東芝推出可節省電路板空間的步進馬達驅動IC
  • 東芝推出第三代碳化矽MOSFET來提高工業設備效率
  • 東芝發布智慧閘極驅動光電耦合器，簡化功率元件週邊電路的設計
  • 停電對日本半導體岩手工廠運營的影響
  • 停電對日本半導體岩手工廠運營的影響（最新消息2）
  • 停電對日本半導體岩手工廠運營的影響（最新消息3）
  • Toshiba宣佈推出全新20TB MG10系列硬碟
  • 11
  • 東芝榮獲AspenCore世界電子成就獎
  • 12
  • 東芝開發帶嵌入式肖特基勢壘二極體的低導通電阻高可靠性SiC MOSFET
  • 東芝將透過新生產設施擴大功率半導體產能
  • 東芝推出採用新型高散熱封裝的車載40V N溝道功率MOSFET，支援車載設備對更大電流的需求
  • 東芝推出有助於減小黏著面積的智慧功率元件
  • 東芝新款車載直流無刷馬達閘極驅動IC有助於提升車輛電氣元件安全性
  • 東芝新型分立式絕緣閘雙極型電晶體將大幅提高空調和工業設備效率
  • 東芝的時鐘擴充周邊介面驅動器/接收器IC即將送樣，有助於減少線束量
  • 東芝發布150V N溝道功率MOSFET，具有業界領先的[1]低導通電阻和改進的反向恢復特性，有助於提高電源效率
  • 東芝開始建設 300 毫米功率半導體晶圓製造設施
  • 東芝推出數位隔離器產品，幫助工業應用實現穩定的高速隔離資料傳輸
  • 東芝電子元件及儲存裝置株式會社宣佈董事變更聲明
  • 東芝推出偵測電子設備溫度上升的簡易解決方案Thermoflagger™
  • 東芝推出小巧輕薄型共汲極 MOSFET，導通電阻極低，適合快速充電設備
  • 東芝推出高電壓、低電流消耗的 LDO 穩壓器，有助於降低設備待機功率
  • 東芝發佈具有高速導通時間的小型光繼電器，有助於縮短半導體測試儀的測試時間
  • 東芝電子元件及存儲裝置株式會社董事變更聲明
  • Toshiba發布有助於提高電源效率的600V超接合結構N溝道功率MOSFET
  • 東芝推出採用小型封裝並具有更少外部零件的電機驅動 IC，可節省電路板空間
  • Toshiba推出支援電源電路小型化的100V N溝道功率MOSFET
  • Toshiba推出ARM® Cortex®-M3微控制器「TXZ+TM族進階系列」，內建的1MB程式碼快閃記憶體支援韌體更新，而不會中斷微控制器的執行
  • Toshiba發佈第三代650V碳化矽蕭特基障壁二極體，有助於提高工業設備效率
  • Toshiba推出採用新型封裝的車用40V N通路功率MOSFET，有助於汽車設備實現高散熱和小型化
  • 東芝開發2200V SiC MOSFET來實現低功耗、系統簡化及小型輕量化（ 8月18日更新）
  • Toshiba推出適用於直流無刷電動機的600V小型智慧功率元件
  • Toshiba開發出業界首款2200V雙碳化矽(SiC) MOSFET模組，為工業裝置的高效率和小型化做出貢獻
  • Toshiba推出用於工業裝置的第三代SiC MOSFET，採用四引腳封裝，可降低開關損耗
  • Toshiba擴充偵測電子裝置溫度上升的簡易解決方案Thermoflagger™的產品陣容
  • 東芝電子元件及儲存裝置株式會社董事變更聲明
  • Toshiba宣布推出22TB MG10F系列硬碟
  • Toshiba推出適用於半導體測試儀高頻訊號開關的小型光繼電器
  • 東芝員工榮獲 “IEC 1906 獎”
  • Toshiba發布用於無刷直流電機驅動器的600V小型智慧功率元件
  • Toshiba推出適用於USB裝置和電池組保護的30V N溝道共漏MOSFET
  • ROHM與Toshiba就合作製造功率元件達成協議
  • 東芝電子元件及儲存裝置株式會社董事變更聲明
  • 東芝電子元件及儲存裝置株式會社半導體業務部門及研發中心搬遷通知
  • 東芝電子元件及儲存裝置株式會社的現況及針對石川地區地震的因應措施（最新消息1 ）
  • 東芝電子元件及儲存裝置應對石川地區地震的現況與措施（最新消息2 , 1月9日更新）
  • 東芝電子元件及記憶體應對石川地區地震的現況與措施（最新消息3）
  • 東芝電子元件及儲存裝置株式會社關於日本石川地區地震的現況及因應措施（最新消息4 ）
  • 東芝電子元件及儲存裝置株式會社關於日本石川地區地震的現況及因應措施（最新消息5 ）
  • 東芝電子元件及儲存裝置因應石川地區地震的現況與措施（最新消息6 , 最終版 , 3月4日更新）
  • Toshiba推出有助於提高電源效率的帶高速二極體的功率MOSFET
  • 東芝開始建造功率半導體後端生產設施
  • Toshiba在馬達控制軟體開發套件中新增位置估測控制技術，以簡化馬達磁場導向控制
  • Toshiba推出用於馬達控制的Arm® Cortex®-M4微控制器
  • Toshiba推出帶嵌入式微控制器的SmartMCD™系列柵極驅動器積體電路
  • Toshiba 成功演示了儲存容量超過 30 TB 之近線硬碟
  • 東芝電子元件及儲存裝置株式會社宣布更換董事的計劃
  • 東芝新的功率半導體 12吋晶圓製造工廠竣工
  • 東芝成功在降低SBD嵌入式SiC MOSFET的導通電阻的同時確保了其可靠性和短路耐受性
  • 東芝電子元件及儲存裝置株式會社董事及監察人變更聲明
  • Toshiba 宣布推出容量高達10TB的 MG10-D 系列企業級硬碟
  • 東芝開發出48 V至1 V非隔離DC-DC轉換器IC
  • 07
  • Toshiba推出支援PCIe® 5.0和USB4®等高速差分訊號的2:1多工器/1:2解多工器開關
  • Toshiba推出可重複使用的電子保險絲eFuse IC新系列
  • 東芝開發出可減輕SiC功率模組中並聯晶片間寄生振盪的技術，該技術具有最小閘極電阻，可支援高速切換
  • Toshiba 推出適用於大型視訊監控系統的新一代 S300 Pro 監控型硬碟
  • Toshiba推出輸出耐壓為900V的汽車光繼電器
  • Toshiba正在提供有助於縮短軟體開發時間的汽車CXPI應答器介面IC樣品
  • Toshiba開始出貨車載直流有刷馬達的柵極驅動器積體電路樣品，此舉將有助於實現設備小型化
  • Toshiba Announces CMR 24TB and SMR 28TB Hard Disk Drives
  • Toshiba第三代碳化矽肖特基柵極二極體產品系列增添1200 V新成員，將推動工業電源設備實現高效率
  • Toshiba推出採用小型封裝、輸出耐壓為900V的車載光繼電器
  • Toshiba適用於三相直流無刷馬達的閘極驅動器集成電路樣品開始出貨，可滿足多種汽車應用場景的需求
  • Toshiba開始提供具有低導通電阻和高可靠性、用於汽車牽引逆變器的裸片1200V SiC MOSFET的試樣
  • Toshiba推出新款 Canvio Flex 2.5 吋外接式硬碟
  • Toshiba擴展基於Arm® Cortex® -M4的馬達控制微控制器產品線
  • Toshiba發布具備高速開機時間的小型光繼電器，幫助縮短半導體測試儀器的測試時間
  • Toshiba推出符合AEC-Q100標準的汽車數位隔離器
  • 東芝功率半導體後段生產新廠房完工
  • Toshiba推出具有增強安全功能的SiC MOSFET閘極驅動光電耦合器，適用於工業設備
  • Toshiba發表適用於汽車有刷直流馬達的閘極驅動器積體電路，協助實現裝置小型化
  • Synology and Toshiba Strengthen Strategic Partnership with MOU
  • 04
  • Toshiba Adds 24TB Capacity to N300 and N300 Pro Internal Hard Disk Drive Series
  • 05
  • Toshiba推出採用DFN8x8封裝的第3代650V SiC MOSFET
  • 06
  • 東芝研發出可降低溝槽型SiC MOSFET與Semi-Super-Junction肖特基二極體損耗的新技術
  • Toshiba推出符合AEC-Q100標準的雙通道車規級數位隔離器
  • 加賀東芝和姬路半導體引入異地PPA模式
  • 東芝電子元件及儲存裝置株式會社董事變更聲明
  • Toshiba Starts Sample Shipments of Second Product in its Smart Motor Control Driver “SmartMCD™” Series
  • Small active-clamp MOSFET for relay drivers: SSM3K357R
  • 100 V dual-type N-channel MOSFET product with highly allowable power dissipation in a small package: SSM6N815R
  • New generation 600 V planar power MOSFET π-MOSIX series products: TK750A60F, TK1K2A60F, TK1K9A60F, TK650A60F
  • 100 V N-channel power MOSFET products for industrial equipment, featuring industry’s lowest level On-resistance: TPH3R70APL, TPN1200APL
  • Lineup expansion of 100 V N-channel power MOSFET U-MOSIX-H series that helps to improve the efficiency of power supplies for industrial equipment: TPW3R70APL, TPH5R60APL
  • Lineup expansion of 100 V N-channel power MOSFET U-MOSIX-H series products that help improve the efficiency of power supplies: TK2R9E10PL, etc.
  • A low spike product in our 60 V N-channel power MOSFET U-MOSIX-H series that helps reducing EMI of power supplies: TPH1R306P1
  • 40 V N-channel power MOSFETs in the U-MOSIX-H series using the SOP Advance(WF) package for automotive applications: TPHR7904PB, TPH1R104PB
  • Lineup expansion of 600 V planar MOSFET π-MOSIX series products that allow greater design flexibility by reducing EMI noise: TK1K0A60F, TK1K7A60F, TK2K2A60F, TK4K1A60F
  • A discrete IGBT with wide SOA for PFCs of air conditioners’ power supplies: GT50J123
  • Lineup expansion of 600 V planar MOSFET π-MOSIX series products that allow greater design flexibility by reducing EMI noise: TK430A60F, TK370A60F
  • Lineup expansion of the new generation super junction N-ch power MOSFET “DTMOSVI series” contributing to higher efficiency of power supplies: TK040Z65Z, TK065N65Z, TK065Z65Z, TK090N65Z, TK090Z65Z, TK090A65Z
  • -40 V P-channel power MOSFETs for automotive use, with -4.5 V drive voltage enabling operation even during a battery voltage drop: XPH3R114MC, XPH4R714MC, XPN9R614MC
  • A lineup expansion of small MOSFETs for automotive equipment offering low power consumption with low On-resistance: SSM6J808R, SSM6K819R
  • 新一代超結N溝道功率MOSFET“DTMOSVI系列”，有助於提高電源效率
  • 降低車載設備功耗的小型表面貼裝的40V／60V N溝道功率MOSFET
  • Expansion of the lineup of 80 V N-channel power MOSFETs with the adoption of a new process that helps to improve the efficiency of power supplies : TPH2R408QM, TPH4R008QM, TPN8R408QM, TPN12008QM
  • 雙極電晶體和開關二極體接面溫度額定值已擴展到150°C，適用於更廣泛的應用
  • A discrete IGBT that helps reduce the power consumption and radiated emissions of home appliances : GT30J110SRA
  • A low-spike-type 40 V N-channel power MOSFET that helps reducing EMI of power supplies : TPHR7404PU
  • 擴展採用新製程的80V N通道功率MOSFET的產品陣容有助於改善電源供應器的效率 : TK2R4E08QM, TK3R3E08QM, TK5R3E08QM, TK7R0E08QM, TK2R4A08QM, TK3R2A08QM, TK5R1A08QM, TK6R8A08QM, TK5R1P08QM, TK6R9P08QM
  • 有助於縮小設備尺寸的車載雙極電晶體: TTA500, TTA501, TTA502, TTC500, TTC501
  • 有助於延長電池驅動設備的工作時間的小型低導通電阻共漏極MOSFET產品線擴展：SSM10N954L
  • 100V N通道功率MOSFET產品線的增加, 有助於在汽車設備設計上面積的縮減：XPW4R10ANB、XPW6R30ANB、XPN1300ANC
  • 有助於縮小設備尺寸的車載雙極性電晶體產品線的擴展
  • 以低導通電阻有助於降低功耗的車用小型MOSFET產品線擴展
  • 有助於降低車載設備功耗的SOP Advance（WF）封裝的功率MOSFET產品線擴展
  • 東芝拓展新一代超接合面結構N通道功率MOSFET“DTMOSVI系列”的產品線，助於電源效率的提高
  • 採用小型TSOP6F封裝的1.5 W MOSFET產品線擴展，將有助於減小設備尺寸
  • 用於車載設備的小型MOSFET產品線中新增了40 V產品，其低導通電阻有助於降低功耗
  • 東芝採用新世代製程擴展150V N通道MOSFET產品線 - 藉此提高電源供應器的效率
  • 雙極晶體管有助於節省電路板空間
  • 有助於降低車載設備功耗的-60V P通道功率MOSFET的產品線擴展
  • 東芝推出有助於減少對環境影響的電晶體
  • 採用L-TOGL™封裝，支持大電流和高散熱的80V ／ 100V車載N溝道功率MOSFET的產品線擴展
  • 東芝擴展U-MOSX-H系列80V N通道功率MOSFET產品線，協助降低電源功耗
  • 擴大有助於降低車載應用功耗的 40V N-Channel MOSFET 產品陣容
  • 東芝雙極電晶體有助於減少環境影響
  • 東芝擴展3300V SiC MOSFET模組的產品陣容，有助於工業設備的高效率化及小型化
  • 1700V SiC MOSFET模組的產品陣容擴大，有助於工業設備的高效化和小型化
  • 擴展適用於閘極驅動電路、電流開關和LED驅動電路的雙極型電晶體產品線
  • 擴大 U-MOSX-H 系列 150 V N 通道 MOSFET 的產品陣容，以降低電源功耗
  • 有助於實現工業設備高效化和小型化的1200V SiC MOSFET模組產品線擴展
  • 有助於降低設備能耗的雙極型電晶體的產品線擴展
  • 有助於減少對環境影響的雙極電晶體的產品線擴展
  • 擴大功率 MOSFET 產品陣容，配備高速二極體，有助於提高電源效率
  • 擴大有助於提升電源效率的600 V Super Junction N通道MOSFET產品線
  • Toshiba 擴大 -40V/-60V 車用 P 通道功率 MOSFET 產品陣容，確保車用設備穩定運行
  • Toshiba採用新一代製程拓展150V N通道功率MOSFET產品線，協助降低電源能耗
  • Toshiba小型MOSFET可降低電池驅動元件的功耗並延長其工作時間
  • Expanded lineup of the second generation of SiC SBD products with a TO-220-2L package: TRS2E65F, TRS3E65F
  • A TVS diode suitable for ESD protection of a low voltage signal line: DF2B5SL
  • A small, low forward voltage Schottky barrier diode suitable for voltage booster circuits of LCD backlights: CLS10F40
  • TVS diodes with improved electrostatic discharge protection performance for high-speed signal lines: DF2B5M5SL, DF2B6M5SL, DF2S5M5SL, DF2S6M5SL
  • Consumption energy saving general-purpose rectifiers with high ESD protection ability: CRG09A, CRG10A
  • A TVS diode with an increased peak pulse current rating to improve surge protection performance for mobile devices: DF2B5BSL
  • Expanded the lineup of general rectifier diodes that can reduce power consumption of equipment: CRG04A
  • Toshiba expands lineup of SBD, which uses a compact package with high heat dissipation ability that allows easier thermal design, by 30 V/ 40 V products: CUHS20F40, CUHS20F30, CUHS15F40, CUHS15F30, CUHS20S40, CUHS20S30, CUHS15S40, CUHS15S30
  • A lineup expansion of TVS diodes for mobile devices by a product with an increased peak pulse current rating for improved surge protection performance: DF2B7BSL
  • Low capacitance TVS diodes for automotive applications offering fine protection performance while keeping signal quality at several Gbps : DF2S5M4FS, DF2S6M4FS
  • Bidirectional TVS diode with a higher peak pulse current rating that contributes to improving reliability of the IC's power supply lines : DF2B5PCT, DF2B7PCT
  • SiC SBDs of 650 V/12 A contributing to power saving and high efficiency of power supply PFCs : TRS12A65F, TRS12E65F
  • Lineup expansion of SiC SBDs of 650 V contributing to high efficiency of power supply PFCs : TRS12N65FB, TRS16N65FB, TRS20N65FB, TRS24N65FB
  • 東芝推出可提高設備的可靠性的齊納二極體其適用於電源線浪湧保護
  • Lineup expansion of Schottky barrier diodes with 60 V products using the compact US2H package that has excellent heat dissipation allowing easier thermal design : CUHS15F60, CUHS20F60, CUHS15S60, CUHS20S60
  • 東芝電源電路保護用齊納二極體產品線擴展，有助於提升產品的可靠性
  • 新增的SOT-23封裝浪湧保護齊納二極體產品線擴展有助於電子設備品質改善
  • 過壓保護齊納二極體採用超小型SOD-962封裝，有助於設備上高密度打件
  • 採用壓裝式封裝的快速恢復二極體有助於減小電源轉換器的尺寸和功耗
  • 東芝推出20款適用於汽車設備的突波保護齊納二極體產品
  • 東芝適用於高壓電路的400 V耐壓小型開關二極體
  • 擴大突波保護齊納二極體的陣容，透過增加新的電壓等級來支援電子設備的品質改進
  • 用於電源線突波保護的齊納二極體有助於提高設備可靠性
  • 200 V, 0.4 A small photorelay: TLP3145
  • 60 V/0.7 A photorelay in 4pin SO6 package for factory automation and other industrial applications: TLP176AM
  • Toshiba has launched IPM-drive photocoupler in thin, compact 5pin SO6 package, helping downsizing equipment: TLP2304
  • Launch of photocouplers for IGBTs and MOSFETs gate drive that are thin, support high temperature operations, and can be mounted on the back side of a board or where height is limited: TLP5751H(LF4), TLP5752H(LF4), TLP5754H(LF4)
  • Launch of photocouplers for IGBTs and MOSFETs gate drive that are thin, support high temperature operations, and can be mounted on the back side of a board or where height is limited: TLP5751H, TLP5752H, TLP5754H
  • 協助縮小半導體測試設備的尺寸，1.5A導通電流的電壓驅動型光繼電器擴展了東芝產品線：TLP3403SRHA
  • 具有高斷態終端電壓額定值，有助於高密度安裝的P-SON4包裝新產品擴展了光繼電器產品系列
  • 推出用於IGBT和MOSFET柵極驅動，可在高溫下工作的薄型封裝光耦：TLP5771H，TLP5772H，TLP5774H
  • N-channel MOSFET driver ICs in industry-leading small package for mobile and consumer applications: TCK401G, TCK402G
  • 300 mA small LDO regulator ICs combined low quiescent bias current with high ripple rejection ratio and fast load transient response: TCR3UG series
  • 1.5 A LDO regulators in industryʼs smallest package for mobile applications: TCR15AG series
  • Small, surface mount LDO regulators that allow long and stable operation of IoT equipment and wearable devices: TCR3UM series
  • Toshiba Starts Mass Production of Motor Driver IC with High-Definition Micro Stepping
  • A compact load switch IC with increased strength package using mold resin: TCK207AN
  • A general-purpose package is newly available in the lineup of Toshiba’s small, surface mount LDO regulator which enables long operation and operational stability of IoT equipment : TCR3UF series
  • A MOSFET gate driver switch IPD for automotive high current applications : TPD7106F
  • 東芝推出適用於車載三相無刷電機的功率MOSFET柵極驅動器
  • Expansion of the lineup of input and output full range operational amplifiers for sensors for mobile devices that contribute to long-term operation : TC75S103F
  • 內建高頻振盪器並可高速控制的3相直流無刷電機驅動晶片
  • 4-bit level shifter that helps to reduce the power consumption of automotive equipment: TC7MP3125FK
  • Lineup expansion of general purpose logic ICs that can be used for a wide range of applications by raising the operating temperature
  • Single-supply 4-bit level shifters for automotive use that allows easier design of voltage level translation circuits : 74LV4T125FK, 74LV4T125FT, 74LV4T126FK, 74LV4T126FT
  • Toshiba Starts Mass Production of Video Processor for High Resolution Automotive Panels
  • 車載直流有刷電機驅動晶片產品線開展
  • Toshiba推出有助於減少連接線數的汽車 CXPI 通訊驅動器/接收器 IC
  • 有助於降低家用電器功耗的1350V／30A離散式IGBT產品線擴展：GT30N135SRA
  • 有助於高壓直流傳輸系統和工業馬達驅動逆變器等工業設備的小型化和高效率化的新型壓裝IEGT
  • 新型壓合式 IEGT 有助於縮小直流輸電系統和工業馬達控制器等高壓轉換器的系統尺寸並提高輸出能力
  • 4500 V/1500A 新型壓接式 IEGT，有助於縮小高壓轉換器的尺寸和功耗
  • 4500 V/1000 A 新型壓接式 IEGT，有助於高壓轉換器的尺寸減小和高輸出
  • 有助於中低速絕緣通信介面高密度安裝的4通道 電晶體輸出光耦
  • 擴大業界最小的電壓驅動光繼電器產品陣容，4-Form-A觸點將有助於減小半導體測試儀的尺寸
  • 具有業界最小表面貼裝面積[的電壓驅動光繼電器產品線擴展，將有助於減小半導體測試設備的尺寸
  • 具有2.5A輸出電流的智能柵極驅動光耦，其輸出類型廣泛應用於工業設備
  • 東芝擴展數位隔離器產品線，協助工業應用中的穩定高速隔離資料傳輸
  • 電機驅動晶片產品線延伸
  • Toshiba無需電流感測電阻的50 V ／ 3.0 A步進馬達驅動器
  • Toshiba推出適用於消費性設備及工業設備的50 V/5 A直流有刷馬達驅動晶片
  • Relationship with Wor(l)d Media & Technology Corp.
  • Technical Review
  • Design Method to Improve Clamping Capability of Parasitic pn Diodes Utilizing Newly Developed Equivalent Circuit Model of SBD-Embedded SiC MOSFETs
  • 3D integration technology with photosensitive mold for fan-out package
  • Analysis of dependence of dVCE/dt on turn-off characteristics with a 1200 V double-gate insulated gate bipolar transistor
  • Implementation of security features in storage products
  • Cybersecurity of automotive semiconductor products
  • Novel Approach to Mitigate Parasitic Oscillation of Power Modules with Parallel Connected SiC-MOSFETs
  • Improving the Short-Circuit Capability of RC-IEGT by Backside Double P-ring Structure
  • Demonstration of Pseudo Independent Driving of Buried Gate in Trench Field Plate MOSFETs
  • Impact of Reverse Current Spreading on Diode Conduction Reliability of SBD-Embedded SiC-MOSFET with Deep p-Shield Structure
  • Paralleling 3.3-kV/800-A rated SiC-MOSFET Modules: An Optimization Method
  • Improved reliability of a 2200 V SiC MOSFET module with an epoxy-encapsulated insulated metal substrate
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